Home > News > Nanomemory – Devices Based on Nanotubes and Nanowires
November 23rd, 2010
Nanomemory – Devices Based on Nanotubes and Nanowires
Abstract:
French scientists have made light-sensitive memory devices by combining carbon nanotubes and silicon nanowires.
As computer chips become ever smaller and more complex, scientists are interested in carbon-based components for devices such as memory chips. Nanoscale memory devices are key elements of future nanoelectronics circuits. For improved performance, the down-scaling of both the size and the programming speed are equally important.
Carbon nanotubes have already been used to make field-effect transistors (CNTFETs). These transistors are very sensitive to their environment and are thus also of interest as sensors. In a recent paper, French scientists led by Vincent Derycke at Saclay have shown that they can make very efficient CNTFETs that work as light sensors and memory elements together. "To be useful, devices based on nano-objects need to bring more than their small size; they need to show extra functionality when compared with conventional transistors" says Derycke.
Source:
materialsviews.com
Related News Press |
News and information
Simulating magnetization in a Heisenberg quantum spin chain April 5th, 2024
NRL charters Navy’s quantum inertial navigation path to reduce drift April 5th, 2024
Discovery points path to flash-like memory for storing qubits: Rice find could hasten development of nonvolatile quantum memory April 5th, 2024
Possible Futures
Discovery points path to flash-like memory for storing qubits: Rice find could hasten development of nonvolatile quantum memory April 5th, 2024
With VECSELs towards the quantum internet Fraunhofer: IAF achieves record output power with VECSEL for quantum frequency converters April 5th, 2024
Academic/Education
Rice University launches Rice Synthetic Biology Institute to improve lives January 12th, 2024
Multi-institution, $4.6 million NSF grant to fund nanotechnology training September 9th, 2022
Chip Technology
Discovery points path to flash-like memory for storing qubits: Rice find could hasten development of nonvolatile quantum memory April 5th, 2024
Utilizing palladium for addressing contact issues of buried oxide thin film transistors April 5th, 2024
HKUST researchers develop new integration technique for efficient coupling of III-V and silicon February 16th, 2024
Memory Technology
Utilizing palladium for addressing contact issues of buried oxide thin film transistors April 5th, 2024
Interdisciplinary: Rice team tackles the future of semiconductors Multiferroics could be the key to ultralow-energy computing October 6th, 2023
Researchers discover materials exhibiting huge magnetoresistance June 9th, 2023
Nanotubes/Buckyballs/Fullerenes/Nanorods/Nanostrings
Tests find no free-standing nanotubes released from tire tread wear September 8th, 2023
Detection of bacteria and viruses with fluorescent nanotubes July 21st, 2023
Nanoelectronics
Interdisciplinary: Rice team tackles the future of semiconductors Multiferroics could be the key to ultralow-energy computing October 6th, 2023
Key element for a scalable quantum computer: Physicists from Forschungszentrum Jülich and RWTH Aachen University demonstrate electron transport on a quantum chip September 23rd, 2022
Reduced power consumption in semiconductor devices September 23rd, 2022
Atomic level deposition to extend Moore’s law and beyond July 15th, 2022
Announcements
NRL charters Navy’s quantum inertial navigation path to reduce drift April 5th, 2024
Discovery points path to flash-like memory for storing qubits: Rice find could hasten development of nonvolatile quantum memory April 5th, 2024
The latest news from around the world, FREE | ||
Premium Products | ||
Only the news you want to read!
Learn More |
||
Full-service, expert consulting
Learn More |
||