Home > News > Nanoribbons Break New Ground in Memory Storage Density
November 12th, 2010
Nanoribbons Break New Ground in Memory Storage Density
Abstract:
Researchers from Germany, Switzerland and Italy have demonstrated that turning graphene into nanoribbons using V2O5 nanofibers as etching masks not only dramatically improves their memory storage density over silicon-based chips but also surpasses carbon nanotubes and graphene in their transition times.
The key to the nanoribbon's memory storage density is that small memory cell. And according to Roman Sordan of the Politecnico di Milano, and one of the researchers on this project, that grapehene nanoribbons shrink these down to 10 nm scale.
Source:
ieee.org
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