Home > News > Toshiba sets up NAND flash fab in Japan
March 25th, 2010
Toshiba sets up NAND flash fab in Japan
Abstract:
Toshiba Corp. it set to start construction of new a fabrication facility on a site next to Yokkaichi Operations, its memory production facility in Mie Prefecture, in July.
Yokkaichi Operations currently has four NAND flash memory fabs. Toshiba has given careful consideration to the timing of the start of construction of the new fab, most notably in light of the fall in demand that followed the global recession in the fall 2008.
Source:
eetasia.com
| Related News Press |
News and information
Decoding hydrogen‑bond network of electrolyte for cryogenic durable aqueous zinc‑ion batteries January 30th, 2026
COF scaffold membrane with gate‑lane nanostructure for efficient Li+/Mg2+ separation January 30th, 2026
Openings/New facilities/Groundbreaking/Expansion
OCSiAl expands its graphene nanotube production capacities to Europe June 17th, 2022
GLOBALFOUNDRIES Moves Corporate Headquarters to its Most Advanced Semiconductor Manufacturing Facility in New York April 27th, 2021
Oxford Instruments Plasma Technology relocates to advanced manufacturing facility: Move driven by exceptional business growth February 12th, 2021
Chip Technology
Metasurfaces smooth light to boost magnetic sensing precision January 30th, 2026
Beyond silicon: Electronics at the scale of a single molecule January 30th, 2026
Lab to industry: InSe wafer-scale breakthrough for future electronics August 8th, 2025
Nanoelectronics
Lab to industry: InSe wafer-scale breakthrough for future electronics August 8th, 2025
Interdisciplinary: Rice team tackles the future of semiconductors Multiferroics could be the key to ultralow-energy computing October 6th, 2023
Key element for a scalable quantum computer: Physicists from Forschungszentrum Jülich and RWTH Aachen University demonstrate electron transport on a quantum chip September 23rd, 2022
Reduced power consumption in semiconductor devices September 23rd, 2022
Announcements
Decoding hydrogen‑bond network of electrolyte for cryogenic durable aqueous zinc‑ion batteries January 30th, 2026
COF scaffold membrane with gate‑lane nanostructure for efficient Li+/Mg2+ separation January 30th, 2026
|
|
||
|
|
||
| The latest news from around the world, FREE | ||
|
|
||
|
|
||
| Premium Products | ||
|
|
||
|
Only the news you want to read!
Learn More |
||
|
|
||
|
Full-service, expert consulting
Learn More |
||
|
|
||