Home > Press > Record SRAM Size, Non-Conventional Lithography, New Tunneling Transistor Highlight the Late-News Topics to be Covered at 2009 IEEE International Electron Devices Meeting
Abstract:
The smallest SRAM memory cell ever demonstrated, and a novel SRAM cell with impressive low-power performance built using tunneling field effect transistors, highlight the late-news papers to be presented at the 55th annual IEEE International Electron Devices Meeting (IEDM) in December.
The IEDM is the world's premier conference for the presentation of applied research in microelectronic, nanoelectronic and bioelectronic devices. It will be held at the Hilton Baltimore on December 7-9, 2009 preceded by two Short Courses on Sunday, Dec. 6. Although the conference typically alternates between San Francisco, CA and Washington, D.C., it will be in Baltimore this year because of extensive renovations at the usual East Coast venue. Some 215 papers will be given by researchers from corporations, universities and government labs worldwide.
One noteworthy late-news paper describes a record small SRAM memory cell size made with non-conventional lithography. Researchers from the National Nano Device Laboratories (Taiwan) and UC-Berkeley built a functional 0.039µm2 6T SRAM cell using a maskless, photoresist-free, nano-injection lithography technique. ("6T" is a measure of cell density.) The cell is just 43-percent the size of the previously reported smallest SRAM cell. The nano-injection lithography employs a gas-phase chemical reaction - activated with a finely controlled electron beam - to deposit a desired nanometer-scale hard mask pattern for subsequent etching. The reaction can deposit both dielectric and conductive masking materials. The lithography process incorporates a full TiN gate and dynamic supply-voltage regulator, and promises to be a low-cost way to perform device and circuit verification for 16-nm technology development. (Paper #17.6, "16nm Functional 0.039mm2 6T-SRAM Cell with Nano Injection Lithography, Nanowire Channel, and Full TiN Gate," Hou-Yu Chen et al, National Nano Device Laboratories (Taiwan) and University of California-Berkeley)
Another significant late-news paper addresses the need for ultra low-power devices. Penn State, Cornell and IQE Inc. researchers will describe an interband tunneling field effect transistor (TFET) built on InGaAs. It features on-current of 20µA/µm at 0.75V and a large on-off current ratio of 104, all the more impressive considering the size of the device: its channel length is only 100nm. The team achieved this performance by fabricating a gate-modulated Zener tunnel junction at the source, to provide for a more abrupt (e.g. more desirable) current turn-on. In addition, the vertical architecture allowed for high-quality in-situ doped junctions that reduce leakage when the device is off. They built a 6T SRAM memory cell, which demonstrated excellent read/write noise margins down to a 0.3V supply voltage. (Paper #13.7, "Experimental Demonstration of 100nm Channel Length In0.53Ga0.47As-based Vertical Inter-band Tunnel Field Effect Transistors (TFETs) for Ultra Low-Power Logic and SRAM Applications," S. Mookerjea et al, Penn State/Cornell/IQE Inc.)
Follow IEDM on Twitter and Facebook at the following links to receive updates:
· Twitter: twitter.com/ieee_iedm
· Facebook:www.facebook.com/search/?q=IEDM&init=quick#/pages/IEDM/131119756449?ref=search&sid=6112806.762392748..1
####
About IEEE
IEEE (Institute of Electrical and Electronics Engineers, Inc.), the world's largest technical professional association, is commemorating its 125th anniversary in 2009 by "Celebrating 125 Years of Engineering the Future" around the globe. Through its more than 375,000 members in 160 countries, IEEE is a leading authority on a wide variety of areas ranging from aerospace systems, computers and telecommunications to biomedical engineering, electric power and consumer electronics. Dedicated to the advancement of technology, IEEE publishes 30 percent of the world's literature in the electrical and electronics engineering and computer science fields, and has developed over 900 active industry standards. The organization annually sponsors more than 850 conferences worldwide. Additional information about IEEE can be found at www.ieee.org.
For more information, please click here
Contacts:
Phyllis Mahoney, Conference Manager
Widerkehr & Associates
19803 Laurel Valley Place
Montgomery Village, MD 20886
Telephone (301) 527-0900
Fax: (301) 527-0994
Copyright © IEEE (Institute of Electrical and Electronics Engineers, Inc
If you have a comment, please Contact us.Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.
Related News Press |
News and information
Flexible electronics integrated with paper-thin structure for use in space January 17th, 2025
Quantum engineers ‘squeeze’ laser frequency combs to make more sensitive gas sensors January 17th, 2025
Chip Technology
Enhancing transverse thermoelectric conversion performance in magnetic materials with tilted structural design: A new approach to developing practical thermoelectric technologies December 13th, 2024
Bringing the power of tabletop precision lasers for quantum science to the chip scale December 13th, 2024
Nanofibrous metal oxide semiconductor for sensory face November 8th, 2024
Announcements
Quantum engineers ‘squeeze’ laser frequency combs to make more sensitive gas sensors January 17th, 2025
The National Space Society Congratulates SpaceX on Starship’s 7th Test Flight: Latest Test of the Megarocket Hoped to Demonstrate a Number of New Technologies and Systems January 17th, 2025
Events/Classes
A New Blue: Mysterious origin of the ribbontail ray’s electric blue spots revealed July 5th, 2024
Researchers demonstrate co-propagation of quantum and classical signals: Study shows that quantum encryption can be implemented in existing fiber networks January 20th, 2023
Printing/Lithography/Inkjet/Inks/Bio-printing/Dyes
Presenting: Ultrasound-based printing of 3D materials—potentially inside the body December 8th, 2023
Simple ballpoint pen can write custom LEDs August 11th, 2023
Disposable electronics on a simple sheet of paper October 7th, 2022
![]() |
||
![]() |
||
The latest news from around the world, FREE | ||
![]() |
![]() |
||
Premium Products | ||
![]() |
||
Only the news you want to read!
Learn More |
||
![]() |
||
Full-service, expert consulting
Learn More |
||
![]() |