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December 1st, 2008

Researchers construct highest frequency silicon cantilever

Abstract:
Researchers in Canada have constructed and measured the highest frequency silicon cantilever yet reported.

Made on a silicon-on-insulator wafer in the 147nm-thick silicon layer, the 400nm by 120nm wide cantilever oscillated at 1.04GHz.

The team, from the University of Alberta, the Canadian National Institute for Nanotechnology, and a firm called Norcada, constructed the cantilever as part of a project to control and measure MEMS in the time domain.

Source:
electronicsweekly.com

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