Home > News > Making magnetic semiconductors
August 2nd, 2006
Making magnetic semiconductors
Abstract:
A team from the University of Iowa, the University of Illinois at Urbana-Champaign and Princeton University, all in the US, has inserted atoms of manganese at desired locations in the semiconductor gallium arsenide (GaAs) using a scanning tunnelling microscope (STM). The resulting magnetic semiconductor material could find a use in spintronic devices, creating chips that can both manipulate and store data.
Source:
nanotechweb
Related News Press |
Possible Futures
Discovery points path to flash-like memory for storing qubits: Rice find could hasten development of nonvolatile quantum memory April 5th, 2024
With VECSELs towards the quantum internet Fraunhofer: IAF achieves record output power with VECSEL for quantum frequency converters April 5th, 2024
Spintronics
Quantum materials: Electron spin measured for the first time June 9th, 2023
Linearly assembled Ag-Cu nanoclusters: Spin transfer and distance-dependent spin coupling November 4th, 2022
Announcements
NRL charters Navy’s quantum inertial navigation path to reduce drift April 5th, 2024
Discovery points path to flash-like memory for storing qubits: Rice find could hasten development of nonvolatile quantum memory April 5th, 2024
The latest news from around the world, FREE | ||
Premium Products | ||
Only the news you want to read!
Learn More |
||
Full-service, expert consulting
Learn More |
||