Home > News > KAIST claims size record with 3-nm FinFET
March 15th, 2006
KAIST claims size record with 3-nm FinFET
Abstract:
Scientists working at the National Nano Fab Center at the Korea Advanced Institute of Science and Technology (KAIST) claimed they had developed the world’s smallest transistor, with a channel length of 3-nanometers.
Source:
EETimes
Bookmark:
| Related News Press |
Chip Technology
Metasurfaces smooth light to boost magnetic sensing precision January 30th, 2026
Beyond silicon: Electronics at the scale of a single molecule January 30th, 2026
Lab to industry: InSe wafer-scale breakthrough for future electronics August 8th, 2025
Nanoelectronics
Lab to industry: InSe wafer-scale breakthrough for future electronics August 8th, 2025
Interdisciplinary: Rice team tackles the future of semiconductors Multiferroics could be the key to ultralow-energy computing October 6th, 2023
Key element for a scalable quantum computer: Physicists from Forschungszentrum Jülich and RWTH Aachen University demonstrate electron transport on a quantum chip September 23rd, 2022
Reduced power consumption in semiconductor devices September 23rd, 2022
Announcements
Decoding hydrogen‑bond network of electrolyte for cryogenic durable aqueous zinc‑ion batteries January 30th, 2026
COF scaffold membrane with gate‑lane nanostructure for efficient Li+/Mg2+ separation January 30th, 2026
 |
||
 |
||
| The latest news from around the world, FREE | ||
 |
||
|
|
||
| Premium Products | ||
 |
||
|
Only the news you want to read!
Learn More |
||
 |
||
|
Full-service, expert consulting
Learn More |
||
|
|
||