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June 23rd, 2004
Room Temperature Single Electron Memory
Abstract:
A single-electron memory, in which a bit of information is stored by one electron, has been demonstrated at room temperature. The memory is a floating gate metal-oxide-semiconductor transistor in silicon with a channel width (~10 nanometers) smaller than the Debye screening length of a single electron and a nanoscale polysilicon dot (~7 nanometers by 7 nanometers) as the floating gate embedded between the channel and the control gate.
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