Home > News > IBM fabs graphene FETs
October 1st, 2007
IBM fabs graphene FETs
Abstract:
Graphene field-effect transistors (FETs) using a single layer of carbon atoms atop a silicon wafer have been successfully fabricated at IBM's T.J. Watson Research Center (Yorktown Heights, N.Y.). Although the technique is a decade away from widespread commercialization, IBM is currently working on radio frequency (RF) applications of the technology for discrete devices planned by the Defense Advanced Research Projects Agency (Darpa).
"We wanted to compare our work on nanotube transistors with graphene FETs," said Phaedon Avouris, an IBM Fellow and the manager of Nanoscale Science at the Research Center. "Their performance is not quite as good as carbon nanotubes, but graphene's electron mobility is at least an order of magnitude [10X] greater than silicon."
Source:
eetimes.com
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