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December 12th, 2006

IMEC Touts High-Performance Ge pMOS

Abstract:
Leuven, Belgium-based nanoelectronics and nanotechnology research center IMEC http://www.imec.be is detailing high-performance germanium (Ge) pMOS devices using a silicon (Si) compatible process flow at the IEEE International Electron Devices Meeting being held in San Francisco this week.

Source:
broadcastnewsroom.com

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