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Home > News > Probing Organic Transistors with Infrared Beams

April 3rd, 2006

Probing Organic Transistors with Infrared Beams

Abstract:
Beams of extremely bright, tightly focused infrared (IR) light generated at Berkeley Lab's Advanced Light Source (ALS) have been used to directly probe the electronic properties of nanometer-scale field-effect transistors made from organic polymers. The results of this unique study could help the future development of sensors, displays, and plastic electronic components for cell phones, wireless internet devices, and other mobile electronic equipment.

"We have succeeded in probing the electronic excitations in organic FET devices only a nanometer thick, using infrared spectromicroscopy," says Zhiqiang Li, an ALS Doctoral Fellow from the University of California at San Diego.

Source:
Berkeley Lab

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