Home > News > Indium phosphide nanowires grow on silicon
November 11th, 2004
Indium phosphide nanowires grow on silicon
Abstract:
Researchers in the Netherlands have for the first time, grown indium phosphide nanowires epitaxially onto silicon and germanium substrates. The team, from Philips Research Laboratories and Delft University of Technology, says this could aid the integration of III-V semiconductors, which have good optoelectronic and high-frequency properties, with standard silicon technology.
Source:
nanotechweb
Bookmark:
| Related News Press |
Possible Futures
A fundamentally new therapeutic approach to cystic fibrosis: Nanobody repairs cellular defect April 17th, 2026
UC Irvine physicists discover method to reverse ‘quantum scrambling’ : The work addresses the problem of information loss in quantum computing system April 17th, 2026
Chip Technology
A reusable chip for particulate matter sensing April 17th, 2026
Metasurfaces smooth light to boost magnetic sensing precision January 30th, 2026
Memory Technology
Researchers tackle the memory bottleneck stalling quantum computing October 3rd, 2025
First real-time observation of two-dimensional melting process: Researchers at Mainz University unveil new insights into magnetic vortex structures August 8th, 2025
Utilizing palladium for addressing contact issues of buried oxide thin film transistors April 5th, 2024
Announcements
A fundamentally new therapeutic approach to cystic fibrosis: Nanobody repairs cellular defect April 17th, 2026
UC Irvine physicists discover method to reverse ‘quantum scrambling’ : The work addresses the problem of information loss in quantum computing system April 17th, 2026
 |
||
 |
||
| The latest news from around the world, FREE | ||
 |
||
|
|
||
| Premium Products | ||
 |
||
|
Only the news you want to read!
Learn More |
||
 |
||
|
Full-service, expert consulting
Learn More |
||
|
|
||