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November 11th, 2004

Indium phosphide nanowires grow on silicon

Abstract:
Researchers in the Netherlands have for the first time, grown indium phosphide nanowires epitaxially onto silicon and germanium substrates. The team, from Philips Research Laboratories and Delft University of Technology, says this could aid the integration of III-V semiconductors, which have good optoelectronic and high-frequency properties, with standard silicon technology.

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