Home > News > Indium phosphide nanowires grow on silicon
November 11th, 2004
Indium phosphide nanowires grow on silicon
Abstract:
Researchers in the Netherlands have for the first time, grown indium phosphide nanowires epitaxially onto silicon and germanium substrates. The team, from Philips Research Laboratories and Delft University of Technology, says this could aid the integration of III-V semiconductors, which have good optoelectronic and high-frequency properties, with standard silicon technology.
Source:
nanotechweb
Bookmark:
| Related News Press |
Possible Futures
Rice research could make weird AI images a thing of the past: New diffusion model approach solves the aspect ratio problem September 13th, 2024
New discovery aims to improve the design of microelectronic devices September 13th, 2024
Chip Technology
New discovery aims to improve the design of microelectronic devices September 13th, 2024
Groundbreaking precision in single-molecule optoelectronics August 16th, 2024
Physicists unlock the secret of elusive quantum negative entanglement entropy using simple classical hardware August 16th, 2024
Memory Technology
Utilizing palladium for addressing contact issues of buried oxide thin film transistors April 5th, 2024
Interdisciplinary: Rice team tackles the future of semiconductors Multiferroics could be the key to ultralow-energy computing October 6th, 2023
Researchers discover materials exhibiting huge magnetoresistance June 9th, 2023
Announcements
New discovery aims to improve the design of microelectronic devices September 13th, 2024
New method in the fight against forever chemicals September 13th, 2024
 |
||
 |
||
| The latest news from around the world, FREE | ||
 |
||
|
|
||
| Premium Products | ||
 |
||
|
Only the news you want to read!
Learn More |
||
 |
||
|
Full-service, expert consulting
Learn More |
||
|
|
||