Home > News > Formation of ultrahigh density Ge nanodots on oxidized Ge/Si
April 28th, 2004
Formation of ultrahigh density Ge nanodots on oxidized Ge/Si
Abstract:
Yoshiaki Nakamura et al. present their work in Journal of Applied Physics. They grew Ge nanodots with a typical size of ~4 nm and ultrahigh density on ultrathin SixGe oxide films made by oxidizing Ge wetting layers grown on Si surfaces. This is a promising result for the application of SiGe-based optoelectronics because of the ultrahigh density of Ge dots in addition to their small dot size.
Source:
PhysOrg
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