Home > News > Nanowire transistors are turned on their end
March 25th, 2004
Nanowire transistors are turned on their end
Abstract:
Writing in Nano Letters, Pho Nguyen and colleagues demonstrate field effect transistors constructed from semiconducting indium oxide nanowires grown directly out of and vertical to a substrate's surface. This approach not only reduces the area taken up by individual transistors, but could potentially make it easier for them to be connected together to form complex circuits.
Source:
* Nature
Related News Press |
Chip Technology
New method cracked for high-capacity, secure quantum communication July 5th, 2024
Diamond glitter: A play of colors with artificial DNA crystals May 17th, 2024
Oscillating paramagnetic Meissner effect and Berezinskii-Kosterlitz-Thouless transition in cuprate superconductor May 17th, 2024
The latest news from around the world, FREE | ||
Premium Products | ||
Only the news you want to read!
Learn More |
||
Full-service, expert consulting
Learn More |
||