Home > News > Nanowire transistors are turned on their end
March 25th, 2004
Nanowire transistors are turned on their end
Abstract:
Writing in Nano Letters, Pho Nguyen and colleagues demonstrate field effect transistors constructed from semiconducting indium oxide nanowires grown directly out of and vertical to a substrate's surface. This approach not only reduces the area taken up by individual transistors, but could potentially make it easier for them to be connected together to form complex circuits.
Source:
* Nature
Bookmark:
| Related News Press |
Chip Technology
A 1960s idea inspires NBI researchers to study hitherto inaccessible quantum states June 6th, 2025
Programmable electron-induced color router array May 14th, 2025
Enhancing power factor of p- and n-type single-walled carbon nanotubes April 25th, 2025
Ultrafast plasmon-enhanced magnetic bit switching at the nanoscale April 25th, 2025
 |
||
 |
||
| The latest news from around the world, FREE | ||
 |
||
|
|
||
| Premium Products | ||
 |
||
|
Only the news you want to read!
Learn More |
||
 |
||
|
Full-service, expert consulting
Learn More |
||
|
|
||