Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > Press > Leti Announces Update of UTSOI Model that Allows Designers To Improve Trade-Off between Performance and Power Use

Abstract:
CEA-Leti announced today that Leti-UTSOI2, the first complete compact model that enlarges the physically described bias range for designers, is available in all major SPICE simulators.

Leti Announces Update of UTSOI Model that Allows Designers To Improve Trade-Off between Performance and Power Use

Grenoble, France | Posted on December 7th, 2013

The updated model, which can account for back interface inversion in ultra-thin body & box (UTBB) transistors, maintains a formal symmetry between front and back interface in all equations of the core model. It also includes a full description of the creation of an inversion layer at the rear face of the silicon film. This physical description is based on an original and non-simplified resolution of the equations that govern the electrostatics of the transistor.

The updated model, which will be presented during Session 12, Dec. 10, at IEDM 2013 in Washington, D.C., is the first compact model exhibiting this capability. It also can describe transistor behaviors in a large range of polarization applied both at the front and at the rear interface of the transistor.

"Enlarging the back biasing range accessible to the design community is key to optimizing the trade-off between performance and power consumption for UTBB technology," said Thierry Poiroux, research engineer at Leti and model co-developer. "This provides more opportunities to utilize FDSOI's advantages for mobile devices and other applications that require efficient energy use."

FDSOI exhibits several major advantages for advanced technology nodes. It allows an electrostatic control by the gate on the channel of the transistor that is significantly better than conventional architectures. This control improves the trade-off between performance and power consumption at the circuit level, and enables significant improvements in silicon chip miniaturization.

In addition, FDSOI is a planar technology, which makes the transition from conventional technologies easier, and allows significantly simplified manufacturability compared to FinFET technology.

The Leti-UTSOI2 compact model was developed to describe the electrical behavior of FDSOI transistors by taking into account all their specificities. The model is based on a physical description of the device and all the parameters are physically based, which also allows its use for predictive analysis of the process.

The electrostatic coupling between the front and rear interfaces of the thin silicon film is part of the model. As a result it is particularly adapted to represent the behavior of the devices in low-doped, thin-silicon technologies in insulator layers ranging in thickness from nanometers to hundreds of micrometers.

The first version of Leti-UTSOI, valid for low-to-moderate back bias (up to Vdd), has already been implemented. It is available in major SPICE simulators (Agilent, Cadence, Mentor Graphics and Synopsys) and it is also available in industrial process-design kits through the CMP. Online documentation and model cards (typical cases) are available at http://www-leti.cea.fr/en/How-to-collaborate/Collaborating-with-Leti/UTSOI. For access to the Verilog-A code, contact Leti.

The model's development was supported by STMicroelectronics and partly funded by the ENIAC JU Places2Be project.

####

About CEA-Leti
By creating innovation and transferring it to industry, Leti is the bridge between basic research and production of micro- and nanotechnologies that improve the lives of people around the world. Backed by its portfolio of 2,200 patents, Leti partners with large industrials, SMEs and startups to tailor advanced solutions that strengthen their competitive positions. It has launched more than 50 startups. Its 8,000m² of new-generation cleanroom space feature 200mm and 300mm wafer processing of micro and nano solutions for applications ranging from space to smart devices. Leti’s staff of more than 1,700 includes 200 assignees from partner companies. Leti is based in Grenoble, France, and has offices in Silicon Valley, Calif., and Tokyo.

For more information, please click here

Contacts:
CEA-Leti
+33 4 38 78 02 26


Agency
+33 6 64 52 81 10

Copyright © CEA-Leti

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

A nanoscale wireless communication system via plasmonic antennas: Greater control affords 'in-plane' transmission of waves at or near visible light August 27th, 2016

Forces of nature: Interview with microscopy innovators Gerd Binnig and Christoph Gerber August 26th, 2016

A promising route to the scalable production of highly crystalline graphene films August 26th, 2016

Graphene under pressure August 26th, 2016

Software

Park Systems Launches Park NX20 300mm Research Atomic Force Microscope with Full 300 mm Semiconductor Wafer Scan - Vastly Improving Productivity August 3rd, 2016

An accelerated pipeline to open materials research: ORNL workflow system unites imaging, algorithms, and HPC to advance materials discovery and design July 24th, 2016

Nanosystem and Digital Surf launch NanoMap Alpha: New surface imaging & metrology software based on Mountains® Technology July 14th, 2016

Leti Develops 3D Network-on-chip to Boost High-performance Computing: Fabrication-ready Hardware-plus-software Communications Solution Boosts Performance, Reduces Energy Consumption July 14th, 2016

Chip Technology

A nanoscale wireless communication system via plasmonic antennas: Greater control affords 'in-plane' transmission of waves at or near visible light August 27th, 2016

A promising route to the scalable production of highly crystalline graphene films August 26th, 2016

Analog DNA circuit does math in a test tube: DNA computers could one day be programmed to diagnose and treat disease August 25th, 2016

Silicon nanoparticles trained to juggle light: Research findings prove the capabilities of silicon nanoparticles for flexible data processing in optical communication systems August 25th, 2016

Nanoelectronics

Light and matter merge in quantum coupling: Rice University physicists probe photon-electron interactions in vacuum cavity experiments August 24th, 2016

New microchip demonstrates efficiency and scalable design: Increased power and slashed energy consumption for data centers August 24th, 2016

Down to the wire: ONR researchers and new bacteria August 18th, 2016

Smarter self-assembly opens new pathways for nanotechnology: Brookhaven Lab scientists discover a way to create billionth-of-a-meter structures that snap together in complex patterns with unprecedented efficiency August 9th, 2016

Announcements

A nanoscale wireless communication system via plasmonic antennas: Greater control affords 'in-plane' transmission of waves at or near visible light August 27th, 2016

Forces of nature: Interview with microscopy innovators Gerd Binnig and Christoph Gerber August 26th, 2016

A promising route to the scalable production of highly crystalline graphene films August 26th, 2016

Graphene under pressure August 26th, 2016

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







Car Brands
Buy website traffic