Home > News > IMEC breakthrough removes barriers to sub-1nm
January 15th, 2004
IMEC breakthrough removes barriers to sub-1nm
Abstract:
IMEC, Europe's largest independent microelectronics and nanotechnology research center, announces that they have successfully demonstrated the use of high-k dielectrics and metal gates to values below one nanometer. Achieving this level of electrical performance using materials other than the traditional polysilicon-based counterparts removes one of the industry's so-called 'red brick wall' barriers to advancing semiconductor technology.
Source:
IMEC
Bookmark:
| Related News Press |
Chip Technology
Metasurfaces smooth light to boost magnetic sensing precision January 30th, 2026
Beyond silicon: Electronics at the scale of a single molecule January 30th, 2026
Lab to industry: InSe wafer-scale breakthrough for future electronics August 8th, 2025
Discoveries
From sensors to smart systems: the rise of AI-driven photonic noses January 30th, 2026
Decoding hydrogen‑bond network of electrolyte for cryogenic durable aqueous zinc‑ion batteries January 30th, 2026
COF scaffold membrane with gate‑lane nanostructure for efficient Li+/Mg2+ separation January 30th, 2026
 |
||
 |
||
| The latest news from around the world, FREE | ||
 |
||
|
|
||
| Premium Products | ||
 |
||
|
Only the news you want to read!
Learn More |
||
 |
||
|
Full-service, expert consulting
Learn More |
||
|
|
||