Home > News > The End of the Line for Silicon Dioxide?
December 31st, 2003
The End of the Line for Silicon Dioxide?
Abstract:
By means of computer simulations, scientists at the Technical Universities in Clausthal and Vienna are investigating new materials for even smaller and more efficient transistor generations. The smaller the transistors, the faster they can operate. As a result, faster and faster processors can also be designed. The function of a transistor requires the presence of a thin insulating layer, the gate oxide. In only a few years, the thickness of this layer will be only one fifty-thousandth of that of a human hair. With continuing use of silicon dioxide as gate oxide, however, further miniaturisation of transistors - and thus the manufacture of even faster chips - will no longer be possible in a few years.
Source:
EurekAlert
Related News Press |
Chip Technology
Discovery points path to flash-like memory for storing qubits: Rice find could hasten development of nonvolatile quantum memory April 5th, 2024
Utilizing palladium for addressing contact issues of buried oxide thin film transistors April 5th, 2024
HKUST researchers develop new integration technique for efficient coupling of III-V and silicon February 16th, 2024
The latest news from around the world, FREE | ||
Premium Products | ||
Only the news you want to read!
Learn More |
||
Full-service, expert consulting
Learn More |
||