Nanotechnology Now

Our NanoNews Digest Sponsors


Heifer International

Wikipedia Affiliate Button


DHgate

Home > Press > CWRU engineering researchers report nanoscale energy-efficient switching devices at IEDM 2013

This image shows the Case Western Reserve measurement apparatus for studying the SiC NEMS logic building blocks. Insets: (a) An illustration of the basic device structure. (b) A circuit diagram for device testing. (c) Representative measured data of abrupt and non-leakage switching characteristics. (d) Recorded long cycles of robust switching in ambient air.

Credit: Image credit: Philip Feng / Case Western Reserve Univeristy
This image shows the Case Western Reserve measurement apparatus for studying the SiC NEMS logic building blocks. Insets: (a) An illustration of the basic device structure. (b) A circuit diagram for device testing. (c) Representative measured data of abrupt and non-leakage switching characteristics. (d) Recorded long cycles of robust switching in ambient air.

Credit: Image credit: Philip Feng / Case Western Reserve Univeristy

Abstract:
By relentlessly miniaturizing a pre-World War II computer technology, and combining this with a new and durable material, researchers at Case Western Reserve University have built nanoscale switches and logic gates that operate more energy-efficiently than those now used by the billions in computers, tablets and smart phones.

CWRU engineering researchers report nanoscale energy-efficient switching devices at IEDM 2013

Cleveland, OH | Posted on December 9th, 2013

Electromechanical switches were the building blocks of electronics before the solid-state transistor was developed during the war. A version made from silicon carbide, at the tiniest of scales, snaps on and off like a light switch, and with none of the energy-wasting current leakage that plagues the smallest electronics today.

The scientists report their findings today at the International Electron Devices Meeting in Washington D.C.

The tiny switch's moving part is only about one cubic micron in volume, more than a thousand times smaller than devices made in today's mainstream microelectromechanical systems (MEMS). Thus, this switch can move much faster and is much lighter.

The switch has also proved durable, operating for more than 10 million cycles in air, at ambient temperatures and high heat without loss of performance—far longer than most other candidates for a non-leaking switch.

Such tolerance may enable electronics-makers to build a computer that operates within the intense heat of a nuclear reactor or jet engine. Silicon transistors start to deteriorate at around 250 degrees Celsius (480 degrees Fahrenheit). Testing has shown the silicon carbide switches operate at more than 500 degrees Celsius (930 degrees Fahrenheit).

The development is significant because switching devices are at the heart of computing and communications technologies.

"In our pockets and backpacks, nowadays we often carry mobile devices that consist of billions of such building blocks, which are switching on and off to perform the information processing functions," explained Philip Feng, professor of electrical engineering and computer science at Case Western Reserve and leader of the project.

Silicon-based metal-oxide-semiconductor field effect transistors, called MOSFETs, are the dominant switching devices in integrated circuits and have led to many extraordinary technologies enjoyed today, Feng said. But continued miniaturization of silicon MOSFETs over the past several decades has recently slowed, as power consumption and heat dissipation have become major challenges.

Energy is lost and heat generated because nanoscale MOFSETs leak like an old faucet. Electrons continue to travel through a switch that's turned off.

"The silicon switches are leaking power at about 1 to 10 nanowatts each," Feng said. "When you have a billion of these on a computer chip, you're losing a few to tens of watts of power. That will consume the battery you carry, even when the transistors are not actively performing computing functions."

Large data centers aren't only wasting that energy, they're paying the costs of cooling to prevent computers from overheating.

Tina He, Prof. Feng's PhD student in electrical engineering and computer science at Case School of Engineering, will provide details about making and testing the switches in her presentation, Silicon Carbide (SiC) Nanoelectromechanical Switches and Logic Gates with Long Cycles and Robust Performance in Ambient Air and High Temperature, at the international meeting. She is scheduled to speak in the "Nano Device Technology - Steep-Slope Devices" session at 3:40 p.m. (Eastern U.S. time), Monday, Dec. 9.

The research team has made three-terminal, gate-controlled switches and different kinds of logic gates - fundamental elements used in computing and communications.

"Compared to silicon and other common materials, SiC is quite special because it is much more resistive to oxidation, to chemical contaminants and to wear," Feng said. "Those properties should lend themselves to devices with more robust performance while protecting them from harsh operating environments."

###

Co-authors of the conference paper are: Case Western Reserve graduate students Rui Yang and Vaishnavi Ranganathan, staff engineer Srihari Rajgopal, electrical engineering and computer science professors Swarup Bhunia and Mehran Mehregany, and Mary Anne Tupta, senior research engineer from Keithley Instruments Inc.

The work is supported by grants from the Defense Advanced Research Projects Agency's Microsystems Technology Office and the National Science Foundation.

The Institute of Electrical and Electronics Engineers has hosted the international meeting for nearly 60 years, to report breakthroughs in a growing range of electronic device technology.

####

For more information, please click here

Contacts:
Kevin Mayhood

216-368-4442

Copyright © Case Western Reserve University

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Revealing the nature of magnetic interactions in manganese oxide: New technique for probing local magnetic interactions confirms 'superexchange' model that explains how the material gets its long-range magnetic order May 25th, 2016

Gigantic ultrafast spin currents: Scientists from TU Wien (Vienna) are proposing a new method for creating extremely strong spin currents. They are essential for spintronics, a technology that could replace today's electronics May 25th, 2016

Diamonds closer to becoming ideal semiconductors: Researchers find new method for doping single crystals of diamond May 25th, 2016

Supercrystals with new architecture can enhance drug synthesis May 24th, 2016

Govt.-Legislation/Regulation/Funding/Policy

Revealing the nature of magnetic interactions in manganese oxide: New technique for probing local magnetic interactions confirms 'superexchange' model that explains how the material gets its long-range magnetic order May 25th, 2016

Light can 'heal' defects in new solar cell materials: Defects in some new electronic materials can be removed by making ions move under illumination May 24th, 2016

Supercrystals with new architecture can enhance drug synthesis May 24th, 2016

Nanoscale Trojan horses treat inflammation May 24th, 2016

Chip Technology

Gigantic ultrafast spin currents: Scientists from TU Wien (Vienna) are proposing a new method for creating extremely strong spin currents. They are essential for spintronics, a technology that could replace today's electronics May 25th, 2016

Diamonds closer to becoming ideal semiconductors: Researchers find new method for doping single crystals of diamond May 25th, 2016

Dartmouth team creates new method to control quantum systems May 24th, 2016

Attosecond physics: A switch for light-wave electronics May 24th, 2016

Nanoelectronics

Researchers demonstrate size quantization of Dirac fermions in graphene: Characterization of high-quality material reveals important details relevant to next generation nanoelectronic devices May 20th, 2016

Graphene: A quantum of current - When current comes in discrete packages: Viennese scientists unravel the quantum properties of the carbon material graphene May 20th, 2016

New type of graphene-based transistor will increase the clock speed of processors: Scientists have developed a new type of graphene-based transistor and using modeling they have demonstrated that it has ultralow power consumption compared with other similar transistor devices May 19th, 2016

Self-healing, flexible electronic material restores functions after many breaks May 17th, 2016

Discoveries

Revealing the nature of magnetic interactions in manganese oxide: New technique for probing local magnetic interactions confirms 'superexchange' model that explains how the material gets its long-range magnetic order May 25th, 2016

Gigantic ultrafast spin currents: Scientists from TU Wien (Vienna) are proposing a new method for creating extremely strong spin currents. They are essential for spintronics, a technology that could replace today's electronics May 25th, 2016

Diamonds closer to becoming ideal semiconductors: Researchers find new method for doping single crystals of diamond May 25th, 2016

Supercrystals with new architecture can enhance drug synthesis May 24th, 2016

Announcements

Revealing the nature of magnetic interactions in manganese oxide: New technique for probing local magnetic interactions confirms 'superexchange' model that explains how the material gets its long-range magnetic order May 25th, 2016

Gigantic ultrafast spin currents: Scientists from TU Wien (Vienna) are proposing a new method for creating extremely strong spin currents. They are essential for spintronics, a technology that could replace today's electronics May 25th, 2016

Diamonds closer to becoming ideal semiconductors: Researchers find new method for doping single crystals of diamond May 25th, 2016

Supercrystals with new architecture can enhance drug synthesis May 24th, 2016

Interviews/Book Reviews/Essays/Reports/Podcasts/Journals/White papers

Revealing the nature of magnetic interactions in manganese oxide: New technique for probing local magnetic interactions confirms 'superexchange' model that explains how the material gets its long-range magnetic order May 25th, 2016

Gigantic ultrafast spin currents: Scientists from TU Wien (Vienna) are proposing a new method for creating extremely strong spin currents. They are essential for spintronics, a technology that could replace today's electronics May 25th, 2016

Diamonds closer to becoming ideal semiconductors: Researchers find new method for doping single crystals of diamond May 25th, 2016

Supercrystals with new architecture can enhance drug synthesis May 24th, 2016

Events/Classes

Novel gene therapy shows potential for lung repair in asthma May 18th, 2016

Arrowhead Pharmaceuticals' Preclinical Candidate ARC-LPA Achieves 98% Knockdown and Long Duration of Effect after Subcutaneous Administration May 10th, 2016

Nanometrics Announces Upcoming Investor Events May 10th, 2016

Oxford Instruments Asylum Research and McGill University Announce the McGill AFM Summer School and Workshop, May 12-13, 2016 May 4th, 2016

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







Car Brands
Buy website traffic