Nanotechnology Now







Heifer International

Wikipedia Affiliate Button


DHgate

Home > Press > Imec shows multiple enhancement options for next-generation FinFETs: Leading nano-electronics R&D center addresses key challenges of Germanium finFET technology at VLSI 2013

Abstract:
At this week's VLSI 2013 Symposium in Kyoto, Japan, imec highlighted new insights into 3D fin shaped field effect transistors (FinFETs) and high mobility channels scaling for the 7nm and 5nm technology node.

Imec shows multiple enhancement options for next-generation FinFETs: Leading nano-electronics R&D center addresses key challenges of Germanium finFET technology at VLSI 2013

Leuven, Belgium | Posted on June 14th, 2013

At the VLSI 2013 symposium, imec presented the first strained Germanium devices based on a Si-replacement process, where a Ge/SiGe quantum-well heterostructure is grown by epitaxially replacing a conventional Si-based shallow trench isolation (STI). The technique allows for highly-versatile means of heterogeneous material integration with Si, ultimately leading the way to future heterogeneous FinFET/nanowire devices. The device shows dramatically superior gate reliability (NBTI) over Si channel devices due to a unique energy band structure of the compressively-strained Ge channel.

According to Aaron Thean, logic devices program director at imec: "We are facing significant challenges to scale the MOSFET architecture towards 7nm and 5nm. Besides dimension scaling, enhancing the device performance, in the face of rising parasitics and power, is a major focus of the logic device research at imec. Among the key activities are R&D efforts investigating both high-mobility channel material and new methods of enhancing Si-based FinFET."

With options to introduce heterostructure into next-generation FinFET, quantum-well channels based on a combination of materials that enhance both mobility and electrostatics, can be engineered. At VLSI 2013, imec also presented comprehensive simulation work that investigated material combinations of Si, SiGe, Ge and III-V channels to enhance device electrostatics, providing important process guidance to extend FinFET scalability.

Moreover, imec presented novel highly scalable engineering approaches to tune gate workfunction and improve mobility, noise and reliability in Si nMOS finFETs. The impact on the performance of layout-induced stress effects in scaled finFETs and the impact of random telegraph noise (RTN) fluctuation in lowly doped devices was shown.

Imec's research into next-generation finFETs is performed in cooperation with imec's key partners in its core CMOS programs including GLOBALFOUNDRIES, INTEL, Micron, Panasonic, Samsung, TSMC, Elpida, SK hynix, Fujitsu and Sony.

####

About IMEC
Imec performs world-leading research in nanoelectronics. Imec leverages its scientific knowledge with the innovative power of its global partnerships in ICT, healthcare and energy. Imec delivers industry-relevant technology solutions. In a unique high-tech environment, its international top talent is committed to providing the building blocks for a better life in a sustainable society. Imec is headquartered in Leuven, Belgium, and has offices in Belgium, the Netherlands, Taiwan, US, China, India and Japan. Its staff of more than 2,000 people includes more than 650 industrial residents and guest researchers. In 2012, imec's revenue (P&L) totaled 320 million euro. Further information on imec can be found at www.imec.be.

Imec is a registered trademark for the activities of IMEC International (a legal entity set up under Belgian law as a "stichting van openbaar nut”), imec Belgium (IMEC vzw supported by the Flemish Government), imec the Netherlands (Stichting IMEC Nederland, part of Holst Centre which is supported by the Dutch Government), imec Taiwan (IMEC Taiwan Co.) and imec China (IMEC Microelectronics (Shangai) Co. Ltd.) and imec India (Imec India Private Limited).

For more information, please click here

Contacts:
Hanne Degans
External Communications Officer
T: +32 16 28 17 69
Mobile : +32 486 06 51 75

Copyright © IMEC

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

New Hopes for Treatment of Intestine Cancer by Edible Nanodrug March 2nd, 2015

Imec, Holst Centre and Renesas Present World’s Lowest Power 2.4GHz Radio Chip for Bluetooth Low Energy March 1st, 2015

Imec, Murata, and Huawei Introduce Breakthrough Solution for TX-to-RX Isolation in Reconfigurable, Multiband Front-End Modules for Mobile Phones: Electrical-Balance Duplexers Pave the Way to Integrated Solution for TX-to-RX Isolation March 1st, 2015

Imec Demonstrates Compact Wavelength-Division Multiplexing CMOS Silicon Photonics Transceiver March 1st, 2015

Chip Technology

onic Present breakthrough in CMOS-based Transceivers for mm-Wave Radar Systems March 1st, 2015

New nanowire structure absorbs light efficiently: Dual-type nanowire arrays can be used in applications such as LEDs and solar cells February 25th, 2015

SUNY Poly CNSE Researchers and Corporate Partners to Present Forty Papers at Globally Recognized Lithography Conference: SUNY Poly CNSE Research Group Awarded Both ‘Best Research Paper’ and ‘Best Research Poster’ at SPIE Advanced Lithography 2015 forum February 25th, 2015

Ultra-thin nanowires can trap electron 'twisters' that disrupt superconductors February 24th, 2015

Nanoelectronics

New nanowire structure absorbs light efficiently: Dual-type nanowire arrays can be used in applications such as LEDs and solar cells February 25th, 2015

Ultra-thin nanowires can trap electron 'twisters' that disrupt superconductors February 24th, 2015

Improved fire detection with new ultra-sensitive, ultraviolet light sensor February 17th, 2015

Nanotechnology facility planned in Lund, Sweden: A production facility for start-ups in the field of nanotechnology may be built in the Science Village in Lund, a world-class research and innovation village that is also home to ESS, the European Spallation Source February 15th, 2015

Announcements

New Hopes for Treatment of Intestine Cancer by Edible Nanodrug March 2nd, 2015

Imec Demonstrates Compact Wavelength-Division Multiplexing CMOS Silicon Photonics Transceiver March 1st, 2015

onic Present breakthrough in CMOS-based Transceivers for mm-Wave Radar Systems March 1st, 2015

Graphene Shows Promise In Eradication Of Stem Cancer Cells March 1st, 2015

Events/Classes

Imec, Holst Centre and Renesas Present World’s Lowest Power 2.4GHz Radio Chip for Bluetooth Low Energy March 1st, 2015

Imec Demonstrates Compact Wavelength-Division Multiplexing CMOS Silicon Photonics Transceiver March 1st, 2015

onic Present breakthrough in CMOS-based Transceivers for mm-Wave Radar Systems March 1st, 2015

Leti to Offer Updates on Silicon Photonics Successes at OFC in LA February 27th, 2015

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More










ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2015 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE