Nanotechnology Now

Our NanoNews Digest Sponsors


Heifer International

Wikipedia Affiliate Button


DHgate

Home > Press > Imec shows multiple enhancement options for next-generation FinFETs: Leading nano-electronics R&D center addresses key challenges of Germanium finFET technology at VLSI 2013

Abstract:
At this week's VLSI 2013 Symposium in Kyoto, Japan, imec highlighted new insights into 3D fin shaped field effect transistors (FinFETs) and high mobility channels scaling for the 7nm and 5nm technology node.

Imec shows multiple enhancement options for next-generation FinFETs: Leading nano-electronics R&D center addresses key challenges of Germanium finFET technology at VLSI 2013

Leuven, Belgium | Posted on June 14th, 2013

At the VLSI 2013 symposium, imec presented the first strained Germanium devices based on a Si-replacement process, where a Ge/SiGe quantum-well heterostructure is grown by epitaxially replacing a conventional Si-based shallow trench isolation (STI). The technique allows for highly-versatile means of heterogeneous material integration with Si, ultimately leading the way to future heterogeneous FinFET/nanowire devices. The device shows dramatically superior gate reliability (NBTI) over Si channel devices due to a unique energy band structure of the compressively-strained Ge channel.

According to Aaron Thean, logic devices program director at imec: "We are facing significant challenges to scale the MOSFET architecture towards 7nm and 5nm. Besides dimension scaling, enhancing the device performance, in the face of rising parasitics and power, is a major focus of the logic device research at imec. Among the key activities are R&D efforts investigating both high-mobility channel material and new methods of enhancing Si-based FinFET."

With options to introduce heterostructure into next-generation FinFET, quantum-well channels based on a combination of materials that enhance both mobility and electrostatics, can be engineered. At VLSI 2013, imec also presented comprehensive simulation work that investigated material combinations of Si, SiGe, Ge and III-V channels to enhance device electrostatics, providing important process guidance to extend FinFET scalability.

Moreover, imec presented novel highly scalable engineering approaches to tune gate workfunction and improve mobility, noise and reliability in Si nMOS finFETs. The impact on the performance of layout-induced stress effects in scaled finFETs and the impact of random telegraph noise (RTN) fluctuation in lowly doped devices was shown.

Imec's research into next-generation finFETs is performed in cooperation with imec's key partners in its core CMOS programs including GLOBALFOUNDRIES, INTEL, Micron, Panasonic, Samsung, TSMC, Elpida, SK hynix, Fujitsu and Sony.

####

About IMEC
Imec performs world-leading research in nanoelectronics. Imec leverages its scientific knowledge with the innovative power of its global partnerships in ICT, healthcare and energy. Imec delivers industry-relevant technology solutions. In a unique high-tech environment, its international top talent is committed to providing the building blocks for a better life in a sustainable society. Imec is headquartered in Leuven, Belgium, and has offices in Belgium, the Netherlands, Taiwan, US, China, India and Japan. Its staff of more than 2,000 people includes more than 650 industrial residents and guest researchers. In 2012, imec's revenue (P&L) totaled 320 million euro. Further information on imec can be found at www.imec.be.

Imec is a registered trademark for the activities of IMEC International (a legal entity set up under Belgian law as a "stichting van openbaar nut”), imec Belgium (IMEC vzw supported by the Flemish Government), imec the Netherlands (Stichting IMEC Nederland, part of Holst Centre which is supported by the Dutch Government), imec Taiwan (IMEC Taiwan Co.) and imec China (IMEC Microelectronics (Shangai) Co. Ltd.) and imec India (Imec India Private Limited).

For more information, please click here

Contacts:
Hanne Degans
External Communications Officer
T: +32 16 28 17 69
Mobile : +32 486 06 51 75

Copyright © IMEC

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Simple attraction: Researchers control protein release from nanoparticles without encapsulation: U of T Engineering discovery stands to improve reliability and fabrication process for treatments to conditions such as spinal cord damage and stroke May 28th, 2016

Scientists illuminate a hidden regulator in gene transcription: New super-resolution technique visualizes important role of short-lived enzyme clusters May 27th, 2016

Doubling down on Schrödinger's cat May 27th, 2016

Deep Space Industries and SFL selected to provide satellites for HawkEye 360’s Pathfinder mission: The privately-funded space-based global wireless signal monitoring system will be developed by Deep Space Industries and UTIAS Space Flight Laboratory May 26th, 2016

Chip Technology

Gigantic ultrafast spin currents: Scientists from TU Wien (Vienna) are proposing a new method for creating extremely strong spin currents. They are essential for spintronics, a technology that could replace today's electronics May 25th, 2016

Diamonds closer to becoming ideal semiconductors: Researchers find new method for doping single crystals of diamond May 25th, 2016

Dartmouth team creates new method to control quantum systems May 24th, 2016

Attosecond physics: A switch for light-wave electronics May 24th, 2016

Nanoelectronics

Researchers demonstrate size quantization of Dirac fermions in graphene: Characterization of high-quality material reveals important details relevant to next generation nanoelectronic devices May 20th, 2016

Graphene: A quantum of current - When current comes in discrete packages: Viennese scientists unravel the quantum properties of the carbon material graphene May 20th, 2016

New type of graphene-based transistor will increase the clock speed of processors: Scientists have developed a new type of graphene-based transistor and using modeling they have demonstrated that it has ultralow power consumption compared with other similar transistor devices May 19th, 2016

Self-healing, flexible electronic material restores functions after many breaks May 17th, 2016

Announcements

Simple attraction: Researchers control protein release from nanoparticles without encapsulation: U of T Engineering discovery stands to improve reliability and fabrication process for treatments to conditions such as spinal cord damage and stroke May 28th, 2016

Scientists illuminate a hidden regulator in gene transcription: New super-resolution technique visualizes important role of short-lived enzyme clusters May 27th, 2016

Doubling down on Schrödinger's cat May 27th, 2016

Deep Space Industries and SFL selected to provide satellites for HawkEye 360’s Pathfinder mission: The privately-funded space-based global wireless signal monitoring system will be developed by Deep Space Industries and UTIAS Space Flight Laboratory May 26th, 2016

Events/Classes

Novel gene therapy shows potential for lung repair in asthma May 18th, 2016

Arrowhead Pharmaceuticals' Preclinical Candidate ARC-LPA Achieves 98% Knockdown and Long Duration of Effect after Subcutaneous Administration May 10th, 2016

Nanometrics Announces Upcoming Investor Events May 10th, 2016

Oxford Instruments Asylum Research and McGill University Announce the McGill AFM Summer School and Workshop, May 12-13, 2016 May 4th, 2016

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







Car Brands
Buy website traffic