Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > Press > Imec shows multiple enhancement options for next-generation FinFETs: Leading nano-electronics R&D center addresses key challenges of Germanium finFET technology at VLSI 2013

Abstract:
At this week's VLSI 2013 Symposium in Kyoto, Japan, imec highlighted new insights into 3D fin shaped field effect transistors (FinFETs) and high mobility channels scaling for the 7nm and 5nm technology node.

Imec shows multiple enhancement options for next-generation FinFETs: Leading nano-electronics R&D center addresses key challenges of Germanium finFET technology at VLSI 2013

Leuven, Belgium | Posted on June 14th, 2013

At the VLSI 2013 symposium, imec presented the first strained Germanium devices based on a Si-replacement process, where a Ge/SiGe quantum-well heterostructure is grown by epitaxially replacing a conventional Si-based shallow trench isolation (STI). The technique allows for highly-versatile means of heterogeneous material integration with Si, ultimately leading the way to future heterogeneous FinFET/nanowire devices. The device shows dramatically superior gate reliability (NBTI) over Si channel devices due to a unique energy band structure of the compressively-strained Ge channel.

According to Aaron Thean, logic devices program director at imec: "We are facing significant challenges to scale the MOSFET architecture towards 7nm and 5nm. Besides dimension scaling, enhancing the device performance, in the face of rising parasitics and power, is a major focus of the logic device research at imec. Among the key activities are R&D efforts investigating both high-mobility channel material and new methods of enhancing Si-based FinFET."

With options to introduce heterostructure into next-generation FinFET, quantum-well channels based on a combination of materials that enhance both mobility and electrostatics, can be engineered. At VLSI 2013, imec also presented comprehensive simulation work that investigated material combinations of Si, SiGe, Ge and III-V channels to enhance device electrostatics, providing important process guidance to extend FinFET scalability.

Moreover, imec presented novel highly scalable engineering approaches to tune gate workfunction and improve mobility, noise and reliability in Si nMOS finFETs. The impact on the performance of layout-induced stress effects in scaled finFETs and the impact of random telegraph noise (RTN) fluctuation in lowly doped devices was shown.

Imec's research into next-generation finFETs is performed in cooperation with imec's key partners in its core CMOS programs including GLOBALFOUNDRIES, INTEL, Micron, Panasonic, Samsung, TSMC, Elpida, SK hynix, Fujitsu and Sony.

####

About IMEC
Imec performs world-leading research in nanoelectronics. Imec leverages its scientific knowledge with the innovative power of its global partnerships in ICT, healthcare and energy. Imec delivers industry-relevant technology solutions. In a unique high-tech environment, its international top talent is committed to providing the building blocks for a better life in a sustainable society. Imec is headquartered in Leuven, Belgium, and has offices in Belgium, the Netherlands, Taiwan, US, China, India and Japan. Its staff of more than 2,000 people includes more than 650 industrial residents and guest researchers. In 2012, imec's revenue (P&L) totaled 320 million euro. Further information on imec can be found at www.imec.be.

Imec is a registered trademark for the activities of IMEC International (a legal entity set up under Belgian law as a "stichting van openbaar nut”), imec Belgium (IMEC vzw supported by the Flemish Government), imec the Netherlands (Stichting IMEC Nederland, part of Holst Centre which is supported by the Dutch Government), imec Taiwan (IMEC Taiwan Co.) and imec China (IMEC Microelectronics (Shangai) Co. Ltd.) and imec India (Imec India Private Limited).

For more information, please click here

Contacts:
Hanne Degans
External Communications Officer
T: +32 16 28 17 69
Mobile : +32 486 06 51 75

Copyright © IMEC

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Graphene and quantum dots put in motion a CMOS-integrated camera that can see the invisible May 29th, 2017

Ag/ZnO-Nanorods Schottky diodes based UV-PDs are fabricated and tested May 26th, 2017

New metamaterial-enhanced MRI technique tested on humans May 26th, 2017

Controlling 3-D behavior of biological cells using laser holographic techniques May 26th, 2017

Chip Technology

Graphene and quantum dots put in motion a CMOS-integrated camera that can see the invisible May 29th, 2017

Researchers find new way to control light with electric fields May 25th, 2017

Nanometrics Announces Retirement Plans of CEO Timothy Stultz: Dr. Stultz to Continue as Director May 25th, 2017

GLOBALFOUNDRIES and Chengdu Partner to Expand FD-SOI Ecosystem in China: More than $100M investment to establish a center of excellence for FDXTM FD-SOI design May 23rd, 2017

Nanoelectronics

Oddball enzyme provides easy path to synthetic biomaterials May 17th, 2017

Racyics Launches ‘makeChip’ Design Service Platform for GLOBALFOUNDRIES’ 22FDX® Technology: Racyics will provide IP and design services as a part of the foundry’s FDXcelerator™ Partner Program May 11th, 2017

Researchers “iron out” graphene’s wrinkles: New technique produces highly conductive graphene wafers April 3rd, 2017

A big leap toward tinier lines: Self-assembly technique could lead to long-awaited, simple method for making smaller microchip patterns March 27th, 2017

Announcements

Graphene and quantum dots put in motion a CMOS-integrated camera that can see the invisible May 29th, 2017

Ag/ZnO-Nanorods Schottky diodes based UV-PDs are fabricated and tested May 26th, 2017

New metamaterial-enhanced MRI technique tested on humans May 26th, 2017

Controlling 3-D behavior of biological cells using laser holographic techniques May 26th, 2017

Events/Classes

Nanomechanics, Inc. to Exhibit at the SEM Conference: Nanoindentation experts will attend and exhibit their instruments at the Conference and Exposition on Experimental and Applied Mechanics in Indianapolis May 25th, 2017

Leti to Demo 1st Wireless UNB Transceiver for ‘Massive Internet of Things’ at RFIC 2017 and IMS 2017: Leti Will also Present Three Papers & Two Workshops on 5G Communications IC Design, from RF to mm-Wave, During IMS 2017 and RFIC 2017 in Hawaii May 24th, 2017

Leti Will Demo World’s-first WVGA 10-µm Pitch GaN Microdisplays for Augmented Reality Video at Display Week in Los Angles: Invited Paper also Will Present Leti’s Success with New Augmented Reality Technology That Reduces Pixel Pitch to Less than 5 Microns May 22nd, 2017

Oxford Instruments Asylum Research and Microscopy and Analysis Present the Webinar: “Video-Rate Atomic Force Microscopy Enables New Research Opportunities” May 9th, 2017

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project