Nanotechnology Now

Our NanoNews Digest Sponsors



Heifer International

Wikipedia Affiliate Button


android tablet pc

Home > Press > Battery and Memory Device in One

Configuration of a resistive storage cell (ReRAM): An electric voltage is built up between the two electrodes so that the storage cells can be regarded as tiny batteries. Filaments formed by deposits during operation may modify the battery's properties. Source: Jülich Aachen Research Alliance (JARA)
Configuration of a resistive storage cell (ReRAM): An electric voltage is built up between the two electrodes so that the storage cells can be regarded as tiny batteries. Filaments formed by deposits during operation may modify the battery's properties. Source: Jülich Aachen Research Alliance (JARA)

Abstract:
Conventional data memory works on the basis of electrons that are moved around and stored. However, even by atomic standards, electrons are extremely small. It is very difficult to control them, for example by means of relatively thick insulator walls, so that information will not be lost over time. This does not only limit storage density, it also costs a great deal of energy. For this reason, researchers are working feverishly all over the world on nanoelectronic components that make use of ions, i.e. charged atoms, for storing data. Ions are some thousands of times heavier that electrons and are therefore much easier to 'hold down'. In this way, the individual storage elements can almost be reduced to atomic dimensions, which enormously improves the storage density.

Battery and Memory Device in One

Juelich, Germany | Posted on April 25th, 2013

In resistive switching memory cells (ReRAMs), ions behave on the nanometre scale in a similar manner to a battery. The cells have two electrodes, for example made of silver and platinum, at which the ions dissolve and then precipitate again. This changes the electrical resistance, which can be exploited for data storage. Furthermore, the reduction and oxidation processes also have another effect. They generate electric voltage. ReRAM cells are therefore not purely passive systems - they are also active electrochemical components. Consequently, they can be regarded as tiny batteries whose properties provide the key to the correct modelling and development of future data storage.

In complex experiments, the scientists from Forschungszentrum Jülich and RWTH Aachen University determined the battery voltage of typical representatives of ReRAM cells and compared them with theoretical values. This comparison revealed other properties (such as ionic resistance) that were previously neither known nor accessible. "Looking back, the presence of a battery voltage in ReRAMs is self-evident. But during the nine-month review process of the paper now published we had to do a lot of persuading, since the battery voltage in ReRAM cells can have three different basic causes, and the assignment of the correct cause is anything but trivial," says Dr. Ilia Valov, the electrochemist in Prof. Rainer Waser's research group.

The new finding is of central significance, in particular, for the theoretical description of the memory components. To date, ReRAM cells have been described with the aid of the concept of memristors - a portmanteau word composed of "memory" and "resistor". The theoretical concept of memristors can be traced back to Leon Chua in the 1970s. It was first applied to ReRAM cells by the IT company Hewlett-Packard in 2008. It aims at the permanent storage of information by changing the electrical resistance. The memristor theory leads to an important restriction. It is limited to passive components. "The demonstrated internal battery voltage of ReRAM elements clearly violates the mathematical construct of the memristor theory. This theory must be expanded to a whole new theory - to properly describe the ReRAM elements," says Dr. Eike Linn, the specialist for circuit concepts in the group of authors. This also places the development of all micro- and nanoelectronic chips on a completely new footing.

"The new findings will help to solve a central puzzle of international ReRAM research," says Prof. Rainer Waser, deputy spokesman of the collaborative research centre SFB 917 'Nanoswitches' established in 2011. In recent years, these puzzling aspects include unexplained long-term drift phenomena or systematic parameter deviations, which had been attributed to fabrication methods. "In the light of this new knowledge, it is possible to specifically optimize the design of the ReRAM cells, and it may be possible to discover new ways of exploiting the cells' battery voltage for completely new applications, which were previously beyond the reach of technical possibilities," adds Waser, whose group has been collaborating for years with companies such as Intel and Samsung Electronics in the field of ReRAM elements. His research group has already filed a patent application for their first idea on how to improve data readout with the aid of battery voltage.

####

About Forschungszentrum Juelich
The Future is Our Mission: this is the common denominator to which Research Centre Juelich, one of the 15 Helmholtz Research Centres in Germany, reduces its work.

For more information, please click here

Contacts:
Christian Schipke
Jülich Aachen Research Alliance (JARA)
+49 2461 61-3835

Copyright © AlphaGalileo

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related Links

Full bibliographic information

Jülich Aachen Research Alliance for Fundamentals of Future Information Technologies (JARA-FIT):

Electronic Materials Research Lab (EMRL):

SFB 917 Nanoswitches:

Related News Press

News and information

A new, tunable device for spintronics: An international team of scientists including physicist Jairo Sinova from the University of Mainz realises a tunable spin-charge converter made of GaAs August 29th, 2014

Nanoscale assembly line August 29th, 2014

New analytical technology reveals 'nanomechanical' surface traits August 29th, 2014

New Vice President Takes Helm at CNSE CMOST: Catherine Gilbert To Lead CNSE Children’s Museum of Science and Technology Through Expansion And Relocation August 29th, 2014

Laboratories

RMIT delivers $30m boost to micro and nano-tech August 26th, 2014

Competition for Graphene: Berkeley Lab Researchers Demonstrate Ultrafast Charge Transfer in New Family of 2D Semiconductors August 26th, 2014

X-ray Laser Probes Tiny Quantum Tornadoes in Superfluid Droplets: SLAC Experiment Reveals Mysterious Order in Liquid Helium August 25th, 2014

Shaping the Future of Nanocrystals: Berkeley Lab Researchers Obtain First Direct Observation of Facet Formation in Nanocubes August 21st, 2014

Chip Technology

New analytical technology reveals 'nanomechanical' surface traits August 29th, 2014

Fonon Announces 3D Metal Sintering Technology: Emerging Additive Nano Powder Manufacturing Technology August 28th, 2014

RMIT delivers $30m boost to micro and nano-tech August 26th, 2014

Competition for Graphene: Berkeley Lab Researchers Demonstrate Ultrafast Charge Transfer in New Family of 2D Semiconductors August 26th, 2014

Memory Technology

Promising Ferroelectric Materials Suffer From Unexpected Electric Polarizations: Brookhaven Lab scientists find surprising locked charge polarizations that impede performance in next-gen materials that could otherwise revolutionize data-driven devices August 18th, 2014

Can our computers continue to get smaller and more powerful? University of Michigan computer scientist reviews frontier technologies to determine fundamental limits of computer scaling August 13th, 2014

An Inkjet-Printed Field-Effect Transistor for Label-Free Biosensing August 11th, 2014

Rice's silicon oxide memories catch manufacturers' eye: Use of porous silicon oxide reduces forming voltage, improves manufacturability July 10th, 2014

Nanoelectronics

Competition for Graphene: Berkeley Lab Researchers Demonstrate Ultrafast Charge Transfer in New Family of 2D Semiconductors August 26th, 2014

A*STAR and industry form S$200M semiconductor R&D July 25th, 2014

A Crystal Wedding in the Nanocosmos July 23rd, 2014

3-D nanostructure could benefit nanoelectronics, gas storage: Rice U. researchers predict functional advantages of 3-D boron nitride July 15th, 2014

Discoveries

A new, tunable device for spintronics: An international team of scientists including physicist Jairo Sinova from the University of Mainz realises a tunable spin-charge converter made of GaAs August 29th, 2014

Nanoscale assembly line August 29th, 2014

Copper shines as flexible conductor August 29th, 2014

Novel 'butterfly' molecule could build new sensors, photoenergy conversion devices August 28th, 2014

Announcements

A new, tunable device for spintronics: An international team of scientists including physicist Jairo Sinova from the University of Mainz realises a tunable spin-charge converter made of GaAs August 29th, 2014

Nanoscale assembly line August 29th, 2014

New analytical technology reveals 'nanomechanical' surface traits August 29th, 2014

New Vice President Takes Helm at CNSE CMOST: Catherine Gilbert To Lead CNSE Children’s Museum of Science and Technology Through Expansion And Relocation August 29th, 2014

Battery Technology/Capacitors/Generators/Piezoelectrics/Thermoelectrics

New analytical technology reveals 'nanomechanical' surface traits August 29th, 2014

Picosun joins forces with IMEC for novel, industrial ALD applications August 25th, 2014

Graphene may be key to leap in supercapacitor performance August 20th, 2014

Could hemp nanosheets topple graphene for making the ideal supercapacitor? August 12th, 2014

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More














ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2014 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE