Nanotechnology Now

Our NanoNews Digest Sponsors



Heifer International

Wikipedia Affiliate Button


android tablet pc

Home > Press > NRL Demonstrates High Durability of Nanotube Transistors to the Harsh Space Environment

A locally etched back-gated field effect transistor (FET) structure with a deposited dielectric layer. Thick dielectric layers are highly susceptible to radiation induced charge build-up, which is known to cause threshold voltage shifts and increased leakage in metal-oxide semiconductor (MOS) devices. To mitigate these effects, the dielectric layer is locally etched in the active region of the back-gated FET. A gate dielectric material is then deposited (depicted in red) over the entire substrate.
(Photo: U.S. Naval Research Laboratory)
A locally etched back-gated field effect transistor (FET) structure with a deposited dielectric layer. Thick dielectric layers are highly susceptible to radiation induced charge build-up, which is known to cause threshold voltage shifts and increased leakage in metal-oxide semiconductor (MOS) devices. To mitigate these effects, the dielectric layer is locally etched in the active region of the back-gated FET. A gate dielectric material is then deposited (depicted in red) over the entire substrate.

(Photo: U.S. Naval Research Laboratory)

Abstract:
U.S. Naval Research Laboratory electronics science and technology engineers demonstrate the ability of single walled carbon nanotube transistors (SWCNTs) to survive the harsh space environment, investigating the effects of ionizing radiation on the crystalline structures and further supporting the development of SWCNT-based nanoelectronics for use in harsh radiation environments.

NRL Demonstrates High Durability of Nanotube Transistors to the Harsh Space Environment

Washington, DC | Posted on September 21st, 2012

"One of the primary challenges for space electronics is mitigating the susceptibility of prolonged exposure to radiation that exists in the charged particle belts that encircle Earth," said Cory Cress, materials research engineer. "These are the first controlled demonstrations showing little performance degradation and high tolerance to cumulative ionizing radiation exposure."

Radiation effects take two forms, transient effects and cumulative effects. The former, referred to as single effect transients (SETs), result from a direct strike by an ionizing particle in space that causes a current pulse in the device. If this pulse propagates through the circuit it can cause data corruption that can be extremely detrimental to someone that relies on that signal, such as a person using GPS for navigation. NRL researchers have recently predicted that such effects are nearly eliminated for SWCNT-based nanoelectronics due to their small size, low density, and inherent isolation from neighboring SWCNTs in a device.

The cumulative effects in traditional electronics results from trapped charges in the oxides of the devices, including the gate oxide and those used to isolate adjacent devices, the latter being primary source of radiation-induced performance degradation in state-of-the-art complementary metal-oxide semiconductor (CMOS) devices. The effect is manifested as a shift in the voltage needed to turn the transistor on or off. This initially results in power leakage, but can eventually cause failure of the entire circuit.

By developing a SWCNT structure with a thin gate oxide made from thin silicon oxynitride, NRL researchers recently demonstrated SWCNT transistors that do not suffer from such radiation-induced performance changes. This hardened dielectric material and naturally isolated one-dimensional SWCNT structure makes them extremely radiation tolerant.

The ability for SWCNT-based transistors to be both tolerant to transient and cumulative effects potentially enables future space electronics with less redundancy and error-correction circuitry, while maintaining the same quality of fidelity. This reduction in overhead alone would greatly reduce power and improve performance over existing space-electronic systems even if the SWCNT-based transistors operate at the same speed as current technologies. Even greater benefits are foreseeable in the future, once devices are developed that exceed the performance of silicon-based transistors.

####

About U.S. Naval Research Laboratory
The U.S. Naval Research Laboratory is the Navy's full-spectrum corporate laboratory, conducting a broadly based multidisciplinary program of scientific research and advanced technological development. The Laboratory, with a total complement of nearly 2,500 personnel, is located in southwest Washington, D.C., with other major sites at the Stennis Space Center, Miss., and Monterey, Calif. NRL has served the Navy and the nation for over 85 years and continues to meet the complex technological challenges of today's world. For more information, visit the NRL homepage or join the conversation on Twitter, Facebook, and YouTube.

For more information, please click here

Contacts:
U.S. Naval Research Laboratory
Daniel Parry, 202-767-2541

Copyright © U.S. Naval Research Laboratory

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Atom-thick CCD could capture images: Rice University scientists develop two-dimensional, light-sensitive material December 20th, 2014

Oregon researchers glimpse pathway of sunlight to electricity: Collaboration with Lund University uses modified UO spectroscopy equipment to study 'maze' of connections in photoactive quantum dots December 19th, 2014

Instant-start computers possible with new breakthrough December 19th, 2014

Aculon Hires New Business Development Director December 19th, 2014

Laboratories

Switching to spintronics: Berkeley Lab reports on electric field switching of ferromagnetism at room temp December 17th, 2014

ORNL microscopy pencils patterns in polymers at the nanoscale December 17th, 2014

Student Nanotechnology Laboratories Network Set Up in Iran December 15th, 2014

Unusual Electronic State Found in New Class of Unconventional Superconductors: Finding gives scientists a new group of materials to explore to unlock secrets of some materials' ability to carry current with no energy loss December 8th, 2014

Govt.-Legislation/Regulation/Funding/Policy

Atom-thick CCD could capture images: Rice University scientists develop two-dimensional, light-sensitive material December 20th, 2014

Oregon researchers glimpse pathway of sunlight to electricity: Collaboration with Lund University uses modified UO spectroscopy equipment to study 'maze' of connections in photoactive quantum dots December 19th, 2014

Switching to spintronics: Berkeley Lab reports on electric field switching of ferromagnetism at room temp December 17th, 2014

ORNL microscopy pencils patterns in polymers at the nanoscale December 17th, 2014

Chip Technology

Instant-start computers possible with new breakthrough December 19th, 2014

Switching to spintronics: Berkeley Lab reports on electric field switching of ferromagnetism at room temp December 17th, 2014

Pb islands in a sea of graphene magnetise the material of the future December 16th, 2014

Stanford team combines logic, memory to build a 'high-rise' chip: Today circuit cards are laid out like single-story towns; Futuristic architecture builds layers of logic and memory into skyscraper chips that would be smaller, faster, cheaper -- and taller December 15th, 2014

Nanotubes/Buckyballs

A sponge-like molecular cage for purification of fullerenes December 15th, 2014

'Trojan horse' proteins used to target hard-to-reach cancers: Scientists at Brunel University London have found a way of targeting hard-to-reach cancers and degenerative diseases using nanoparticles, but without causing the damaging side effects the treatment normally brings December 11th, 2014

Detecting gases wirelessly and cheaply: New sensor can transmit information on hazardous chemicals or food spoilage to a smartphone December 8th, 2014

Green meets nano: Scientists at TU Darmstadt create multifunctional nanotubes using nontoxic materials December 3rd, 2014

Announcements

Atom-thick CCD could capture images: Rice University scientists develop two-dimensional, light-sensitive material December 20th, 2014

Oregon researchers glimpse pathway of sunlight to electricity: Collaboration with Lund University uses modified UO spectroscopy equipment to study 'maze' of connections in photoactive quantum dots December 19th, 2014

Instant-start computers possible with new breakthrough December 19th, 2014

Aculon Hires New Business Development Director December 19th, 2014

Military

Atom-thick CCD could capture images: Rice University scientists develop two-dimensional, light-sensitive material December 20th, 2014

UCLA engineers first to detect and measure individual DNA molecules using smartphone microscope December 15th, 2014

Nanoshaping method points to future manufacturing technology December 11th, 2014

Stacking two-dimensional materials may lower cost of semiconductor devices December 11th, 2014

Aerospace/Space

Lifeboat Foundation gives 2014 Guardian Award to Elon Musk December 16th, 2014

NEI introduces NANOMYTE® SuperAi, a Durable Anti-ice Coating December 4th, 2014

Atmospheric carbon dioxide used for energy storage products December 2nd, 2014

Deep Space Industries and Solid Prototype Announce a Strategic Partnership: Solid Prototype Inc integrates with DSI’s spacecraft design process, helping reduce costs and decrease turnaround time December 1st, 2014

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More










ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2014 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE