Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > Press > NRL Demonstrates High Durability of Nanotube Transistors to the Harsh Space Environment

A locally etched back-gated field effect transistor (FET) structure with a deposited dielectric layer. Thick dielectric layers are highly susceptible to radiation induced charge build-up, which is known to cause threshold voltage shifts and increased leakage in metal-oxide semiconductor (MOS) devices. To mitigate these effects, the dielectric layer is locally etched in the active region of the back-gated FET. A gate dielectric material is then deposited (depicted in red) over the entire substrate.
(Photo: U.S. Naval Research Laboratory)
A locally etched back-gated field effect transistor (FET) structure with a deposited dielectric layer. Thick dielectric layers are highly susceptible to radiation induced charge build-up, which is known to cause threshold voltage shifts and increased leakage in metal-oxide semiconductor (MOS) devices. To mitigate these effects, the dielectric layer is locally etched in the active region of the back-gated FET. A gate dielectric material is then deposited (depicted in red) over the entire substrate.

(Photo: U.S. Naval Research Laboratory)

Abstract:
U.S. Naval Research Laboratory electronics science and technology engineers demonstrate the ability of single walled carbon nanotube transistors (SWCNTs) to survive the harsh space environment, investigating the effects of ionizing radiation on the crystalline structures and further supporting the development of SWCNT-based nanoelectronics for use in harsh radiation environments.

NRL Demonstrates High Durability of Nanotube Transistors to the Harsh Space Environment

Washington, DC | Posted on September 21st, 2012

"One of the primary challenges for space electronics is mitigating the susceptibility of prolonged exposure to radiation that exists in the charged particle belts that encircle Earth," said Cory Cress, materials research engineer. "These are the first controlled demonstrations showing little performance degradation and high tolerance to cumulative ionizing radiation exposure."

Radiation effects take two forms, transient effects and cumulative effects. The former, referred to as single effect transients (SETs), result from a direct strike by an ionizing particle in space that causes a current pulse in the device. If this pulse propagates through the circuit it can cause data corruption that can be extremely detrimental to someone that relies on that signal, such as a person using GPS for navigation. NRL researchers have recently predicted that such effects are nearly eliminated for SWCNT-based nanoelectronics due to their small size, low density, and inherent isolation from neighboring SWCNTs in a device.

The cumulative effects in traditional electronics results from trapped charges in the oxides of the devices, including the gate oxide and those used to isolate adjacent devices, the latter being primary source of radiation-induced performance degradation in state-of-the-art complementary metal-oxide semiconductor (CMOS) devices. The effect is manifested as a shift in the voltage needed to turn the transistor on or off. This initially results in power leakage, but can eventually cause failure of the entire circuit.

By developing a SWCNT structure with a thin gate oxide made from thin silicon oxynitride, NRL researchers recently demonstrated SWCNT transistors that do not suffer from such radiation-induced performance changes. This hardened dielectric material and naturally isolated one-dimensional SWCNT structure makes them extremely radiation tolerant.

The ability for SWCNT-based transistors to be both tolerant to transient and cumulative effects potentially enables future space electronics with less redundancy and error-correction circuitry, while maintaining the same quality of fidelity. This reduction in overhead alone would greatly reduce power and improve performance over existing space-electronic systems even if the SWCNT-based transistors operate at the same speed as current technologies. Even greater benefits are foreseeable in the future, once devices are developed that exceed the performance of silicon-based transistors.

####

About U.S. Naval Research Laboratory
The U.S. Naval Research Laboratory is the Navy's full-spectrum corporate laboratory, conducting a broadly based multidisciplinary program of scientific research and advanced technological development. The Laboratory, with a total complement of nearly 2,500 personnel, is located in southwest Washington, D.C., with other major sites at the Stennis Space Center, Miss., and Monterey, Calif. NRL has served the Navy and the nation for over 85 years and continues to meet the complex technological challenges of today's world. For more information, visit the NRL homepage or join the conversation on Twitter, Facebook, and YouTube.

For more information, please click here

Contacts:
U.S. Naval Research Laboratory
Daniel Parry, 202-767-2541

Copyright © U.S. Naval Research Laboratory

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Shining rings: A new material emits white light when exposed to electricity: New synthetic approach could spark development of other dynamic materials July 24th, 2017

Ultrathin device harvests electricity from human motion July 23rd, 2017

The July 23 close fly-by of asteroid 2017 BS5 is explored in a Q&A with Dr. John S. Lewis, chief scientist at Deep Space Industries July 23rd, 2017

Scientists announce the quest for high-index materials: All-dielectric nanophotonics: The quest for better materials and fabrication techniques July 22nd, 2017

Laboratories

Studying Argon Gas Trapped in Two-Dimensional Array of Tiny "Cages": Understanding how individual atoms enter and exit the nanoporous frameworks could help scientists design new materials for gas separation and nuclear waste remediation July 17th, 2017

News laser design offers more inexpensive multi-color output: Design can control color, intensity of light by varying cavity architecture July 11th, 2017

Argonne National Laboratory’s Continuous ALD Technology Licensed Exclusively to Forge Nano July 7th, 2017

Brookhaven Scientists Study Role of 'Electrolyte Gating' in Functional Oxide Materials July 3rd, 2017

Govt.-Legislation/Regulation/Funding/Policy

Ultrathin device harvests electricity from human motion July 23rd, 2017

The first light atomic nucleus with a second face July 20th, 2017

Semiliquid chains pulled out of a sea of microparticles July 20th, 2017

Here's a tip: Indented cement shows unique properties: Rice University models reveal nanoindentation can benefit crystals in concrete July 20th, 2017

Chip Technology

Semiliquid chains pulled out of a sea of microparticles July 20th, 2017

A firefly's flash inspires new nanolaser light July 18th, 2017

GLOBALFOUNDRIES and VeriSilicon To Enable Single-Chip Solution for Next-Gen IoT Networks: Integrated solution leverages GF’s 22FDX® technology to decrease power, area, and cost for NB-IoT and LTE-M applications July 14th, 2017

Nanometrics to Announce Second Quarter Financial Results on August 1, 2017 July 14th, 2017

Nanotubes/Buckyballs/Fullerenes/Nanorods

Killing cancer in the heat of the moment: A new method efficiently transfers genes into cells, then activates them with light. This could lead to gene therapies for cancers July 9th, 2017

Tests show no nanotubes released during utilisation of nanoaugmented materials June 9th, 2017

Ag/ZnO-Nanorods Schottky diodes based UV-PDs are fabricated and tested May 26th, 2017

Fed grant backs nanofiber development: Rice University joins Department of Energy 'Next Generation Machines' initiative May 10th, 2017

Announcements

Shining rings: A new material emits white light when exposed to electricity: New synthetic approach could spark development of other dynamic materials July 24th, 2017

Ultrathin device harvests electricity from human motion July 23rd, 2017

The July 23 close fly-by of asteroid 2017 BS5 is explored in a Q&A with Dr. John S. Lewis, chief scientist at Deep Space Industries July 23rd, 2017

Scientists announce the quest for high-index materials: All-dielectric nanophotonics: The quest for better materials and fabrication techniques July 22nd, 2017

Military

Nanoparticles could spur better LEDs, invisibility cloaks July 19th, 2017

'Upconverted' light has a bright future: Rice University professor developing plasmon-powered devices for medicine, security, solar cells July 17th, 2017

Nature-inspired material uses liquid reinforcement: Rice U. nanoengineers create liquid-solid composites using clues from nature July 11th, 2017

Meniscus-assisted technique produces high efficiency perovskite PV films July 7th, 2017

Aerospace/Space

The July 23 close fly-by of asteroid 2017 BS5 is explored in a Q&A with Dr. John S. Lewis, chief scientist at Deep Space Industries July 23rd, 2017

National Space Society Governor Scott Pace Named to National Space Council as Executive Secretary July 18th, 2017

National Space Society Supports VP Pence's Call for Constant Low-Earth Orbit Human Presence Leading to the Settlement of Space July 13th, 2017

Thinking thin brings new layering and thermal abilities to the semiconductor industry: In a breakthrough for the semiconductor industry, researchers demonstrate a new layer transfer technique called "controlled spalling" that creates many thin layers from a single gallium nitride July 11th, 2017

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project