Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > Press > NRL Demonstrates High Durability of Nanotube Transistors to the Harsh Space Environment

A locally etched back-gated field effect transistor (FET) structure with a deposited dielectric layer. Thick dielectric layers are highly susceptible to radiation induced charge build-up, which is known to cause threshold voltage shifts and increased leakage in metal-oxide semiconductor (MOS) devices. To mitigate these effects, the dielectric layer is locally etched in the active region of the back-gated FET. A gate dielectric material is then deposited (depicted in red) over the entire substrate.
(Photo: U.S. Naval Research Laboratory)
A locally etched back-gated field effect transistor (FET) structure with a deposited dielectric layer. Thick dielectric layers are highly susceptible to radiation induced charge build-up, which is known to cause threshold voltage shifts and increased leakage in metal-oxide semiconductor (MOS) devices. To mitigate these effects, the dielectric layer is locally etched in the active region of the back-gated FET. A gate dielectric material is then deposited (depicted in red) over the entire substrate.

(Photo: U.S. Naval Research Laboratory)

Abstract:
U.S. Naval Research Laboratory electronics science and technology engineers demonstrate the ability of single walled carbon nanotube transistors (SWCNTs) to survive the harsh space environment, investigating the effects of ionizing radiation on the crystalline structures and further supporting the development of SWCNT-based nanoelectronics for use in harsh radiation environments.

NRL Demonstrates High Durability of Nanotube Transistors to the Harsh Space Environment

Washington, DC | Posted on September 21st, 2012

"One of the primary challenges for space electronics is mitigating the susceptibility of prolonged exposure to radiation that exists in the charged particle belts that encircle Earth," said Cory Cress, materials research engineer. "These are the first controlled demonstrations showing little performance degradation and high tolerance to cumulative ionizing radiation exposure."

Radiation effects take two forms, transient effects and cumulative effects. The former, referred to as single effect transients (SETs), result from a direct strike by an ionizing particle in space that causes a current pulse in the device. If this pulse propagates through the circuit it can cause data corruption that can be extremely detrimental to someone that relies on that signal, such as a person using GPS for navigation. NRL researchers have recently predicted that such effects are nearly eliminated for SWCNT-based nanoelectronics due to their small size, low density, and inherent isolation from neighboring SWCNTs in a device.

The cumulative effects in traditional electronics results from trapped charges in the oxides of the devices, including the gate oxide and those used to isolate adjacent devices, the latter being primary source of radiation-induced performance degradation in state-of-the-art complementary metal-oxide semiconductor (CMOS) devices. The effect is manifested as a shift in the voltage needed to turn the transistor on or off. This initially results in power leakage, but can eventually cause failure of the entire circuit.

By developing a SWCNT structure with a thin gate oxide made from thin silicon oxynitride, NRL researchers recently demonstrated SWCNT transistors that do not suffer from such radiation-induced performance changes. This hardened dielectric material and naturally isolated one-dimensional SWCNT structure makes them extremely radiation tolerant.

The ability for SWCNT-based transistors to be both tolerant to transient and cumulative effects potentially enables future space electronics with less redundancy and error-correction circuitry, while maintaining the same quality of fidelity. This reduction in overhead alone would greatly reduce power and improve performance over existing space-electronic systems even if the SWCNT-based transistors operate at the same speed as current technologies. Even greater benefits are foreseeable in the future, once devices are developed that exceed the performance of silicon-based transistors.

####

About U.S. Naval Research Laboratory
The U.S. Naval Research Laboratory is the Navy's full-spectrum corporate laboratory, conducting a broadly based multidisciplinary program of scientific research and advanced technological development. The Laboratory, with a total complement of nearly 2,500 personnel, is located in southwest Washington, D.C., with other major sites at the Stennis Space Center, Miss., and Monterey, Calif. NRL has served the Navy and the nation for over 85 years and continues to meet the complex technological challenges of today's world. For more information, visit the NRL homepage or join the conversation on Twitter, Facebook, and YouTube.

For more information, please click here

Contacts:
U.S. Naval Research Laboratory
Daniel Parry, 202-767-2541

Copyright © U.S. Naval Research Laboratory

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

MEMS chips get metatlenses: Combining metasurface lenses with MEMS technology could add high-speed scanning and enhance focusing capability of optical systems February 21st, 2018

Atomic structure of ultrasound material not what anyone expected February 21st, 2018

Oxford Instruments announces Dr Kate Ross as winner of the 2018 Lee Osheroff Richardson Science Prize for North and South America February 20th, 2018

Computers aid discovery of new, inexpensive material to make LEDs with high color quality February 20th, 2018

Laboratories

Atomic Flaws Create Surprising, High-Efficiency UV LED Materials: Subtle surface defects increase UV light emission in greener, more cost-effective LED and catalyst materials February 8th, 2018

Thanks for the memory: NIST takes a deep look at memristors January 20th, 2018

Laboratory Management Web Application Goes Nationwide January 9th, 2018

NRL improves optical efficiency in nanophotonic devices January 4th, 2018

Govt.-Legislation/Regulation/Funding/Policy

Computers aid discovery of new, inexpensive material to make LEDs with high color quality February 20th, 2018

Arrowhead Receives Regulatory Clearance to Begin Phase 1/2 Study of ARO-HBV for Treatment of Hepatitis B February 15th, 2018

Arrowhead Pharmaceuticals Receives Orphan Drug Designation for ARO-AAT February 15th, 2018

Rutgers-Led Innovation Could Spur Faster, Cheaper, Nano-Based Manufacturing: Scalable and cost-effective manufacturing of thin film devices February 14th, 2018

Chip Technology

Photonic chip guides single photons, even when there are bends in the road February 16th, 2018

Graphene on toast, anyone? Rice University scientists create patterned graphene onto food, paper, cloth, cardboard February 13th, 2018

Liquid crystal molecules form nano rings: Quantized self-assembly enables design of materials with novel properties February 7th, 2018

Nanometrics Selected for Fab-Wide Process Control Metrology by Domestic China 3D-NAND Manufacturer: Latest Fab Win Includes Comprehensive Suite for Substrate, Thin Film and Critical Dimension Metrology February 7th, 2018

Nanotubes/Buckyballs/Fullerenes/Nanorods

Nanotube fibers in a jiffy: Rice University lab makes short nanotube samples by hand to dramatically cut production time January 11th, 2018

Touchy nanotubes work better when clean: Rice, Swansea scientists show that decontaminating nanotubes can simplify nanoscale devices January 4th, 2018

Paving the way for a non-electric battery to store solar energy: UMass Amherst scientists say a polymer chain organized like a string of Christmas lights assists energy storage December 22nd, 2017

Nanotubes go with the flow to penetrate brain tissue: Rice University scientists, engineers develop microfluidic devices, microelectrodes for gentle implantation December 19th, 2017

Announcements

MEMS chips get metatlenses: Combining metasurface lenses with MEMS technology could add high-speed scanning and enhance focusing capability of optical systems February 21st, 2018

Atomic structure of ultrasound material not what anyone expected February 21st, 2018

Oxford Instruments announces Dr Kate Ross as winner of the 2018 Lee Osheroff Richardson Science Prize for North and South America February 20th, 2018

Computers aid discovery of new, inexpensive material to make LEDs with high color quality February 20th, 2018

Military

Graphene on toast, anyone? Rice University scientists create patterned graphene onto food, paper, cloth, cardboard February 13th, 2018

Silk fibers could be high-tech ‘natural metamaterials’ January 31st, 2018

Researchers use sound waves to advance optical communication January 22nd, 2018

New Method Uses DNA, Nanoparticles and Top-Down Lithography to Make Optically Active Structures: Technique could lead to new classes of materials that can bend light, such as for those used in cloaking devices January 18th, 2018

Aerospace/Space

Joseph N. Pelton named 2017 Lifeboat Foundation Guardian Award Winner February 1st, 2018

New research yields super-strong aluminum alloy January 25th, 2018

Nanotube fibers in a jiffy: Rice University lab makes short nanotube samples by hand to dramatically cut production time January 11th, 2018

Teachers in Space, Inc. wins Dream Project contest January 9th, 2018

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project