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Home > Press > Iranian Researcher Builds Optimized Electronic Devices

Iranian researcher Arash Daqiqi managed to build optimized electronic devices.

Dr. Arash Daqiqi has filed a patent entitled 'Double Insulating Silicon on Diamond Device' under the registration number US2010/0295128 in the United States Patent and Trademark Office (USPTO).

Iranian Researcher Builds Optimized Electronic Devices

Tehran, Iran | Posted on April 16th, 2012

Dr. Arash Daqiqi, PhD in micro-electronic devices in electronics engineering from the State University of Washington, is currently a member of the Scientific Board of Shahr-e Kord University.

"The miniaturization process of devices and the improvement of the behavior of silicon circuits on insulations were my main goals during the researches that lead to the filing of the patent," he told the INIC.

Pointing to the fact that the increase in the leaking stream - which is caused by a decrease of a few nanometers in the length of the canal - is among the most important challenges in the miniaturization of nanodevices, Dr Daqiqi stated, "In this patent, the leaking stream of the device has been decreased by using a new nanostructure, and the scaling possibility has been enabled for the next generation."

"The simulation results show a decrease of 40-200% in the leaking stream for a 22-nanometre silicon device on insulation. In addition, as the device is made small at nanometric scale, the body resistance increases noticeably, to the extent that the changes in frequent response of the transistor on exit conductivity of the nanotransistor increases the non-linear effects of the circuits."

"The body resistance can be adjusted in this patent by using nanotechnology. In addition, the results obtained from the simulation of a 45-nanometre low noise amplifier confirmed the modification in the linear behavior of the circuit," he said.

"Taking into consideration the progress in technology of device miniaturization, it is essential to decrease the leaking stream and to improve the electrostatic properties of transistors. Among the advantages of improving the linear behavior of the circuits, mention can be made of the fact that the design of the devices will not be complicated and the consumed power of the portable electronic devices will not increase," Dr. Daqiqi concluded.


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