Home > Press > GE Scientists Demonstrate Breakthrough Thermal Material System to Enable Faster Computing
Abstract:
Develops prototype substrate for high-speed electronics that conducts heat better than copper.
GE Scientists Demonstrate Breakthrough Thermal Material System to Enable Faster Computing
Niskayuna, NY | Posted on March 15th, 2011
Faster laptops, more advanced radar systems and better aviation and naval electronic control systems all potential benefits of new technology
Scientists in GE's Global Research Center have demonstrated an advanced thermal material system that could pave the way to faster computing and higher performing electronic systems. Leveraging technologies developed under GE's Nanotechnology Advanced Technology Program, they have fabricated a prototype substrate that can cool electronic devices such as a laptop computer twice as well as copper.
Since the dawn of the electronics age, copper has been a preferred material to cool electronics because of its favorable heat conducting properties. But as electronic systems become more advanced, they are generating more and more heat. Too much heat can limit the overall performance of these systems, impacting computing speed and processing power. New breakthrough materials will be needed to enable more advanced systems and applications.
The development of GE's prototype substrate, which utilizes phase-change-based heat transfer, is part of a four year, $6 million program funded by the Defense Advanced Research Program Agency (DARPA, Contract # No. N66001-08-C-2008). As the leading organization of the program, GE Global Research has been collaborating with GE Intelligent Platforms, the Air Force Research Laboratory, and University of Cincinnati on the project.
Dr. Tao Deng, a senior scientist at GE Global Research and the project leader, said, "As electronics become more advanced, we are approaching the point where conventional materials like copper can't take the heat. For computing to go faster and electronics systems to become more capable, better cooling solutions such as GE's prototype substrate will be required to allow this to happen."
Deng added, "In demonstrations, GE's prototype substrate has functioned effectively in a variety of electronics application environments. We also subjected it to harsh conditions during testing and found it could successfully operate in extremely high gravity applications."
Deng noted that GE's prototype operated in conditions experiencing more than 10 times the normal force of gravity. By comparison, this gravity force is more than twice the maximum force experienced on the world's fastest roller coasters.
How it Works
GE's phase-change based prototype substrate can be applied to computer chips and a variety of different electronic components. It acts as a cooling mechanism that spreads or dissipates the heat generated in electronic systems to keep components cool.
During testing at the Air Force Research laboratories, GE's research team successfully demonstrated a prototype substrate that was measured to have at least twice the thermal conductivity as copper at only one-fourth of its weight. In addition, the prototype successfully operated in a condition that was more than 10 times normal gravity.
With high thermal conductivity, low weight, and high "G" acceleration performance, this substrate could work well in a variety of different systems, ranging from laptop computers to larger scale, more sophisticated computing systems that run the avionics and electronic control systems on board jetliners and other aircraft.
In collaboration with various agencies from the US government, GE Global Research has been developing several advanced thermal technologies. Besides the DARPA effort, Dr. Deng is also leading a team, supported by Air Force Research Laboratory, to develop advanced thermal solutions for high-speed flight in a 1.5-year, $1 MM effort. These efforts will build a total thermal solution platform to serve multiple GE businesses, including GE Aviation, GE Energy, and GE Intelligent Platforms.
####
About GE Global Research
GE Global Research (ge.com/research) is the hub of technology development for all of GE's businesses. Our scientists and engineers redefine what’s possible, drive growth for our businesses, and find answers to some of the world’s toughest problems. We innovate 24 hours a day, with sites in Niskayuna, New York; Bangalore, India; Shanghai, China; Munich, Germany; and our newest location in Rio de Janeiro, Brazil. Connect with our technologists at edisonsdesk.com and twitter.com/edisonsdesk.
Distribution Statement “A” (Approved for Public Release, Distribution Unlimited)
For more information, please click here
Contacts:
Todd Alhart
GE Global Research
518-387-7914
alhart[.]research.ge.com
Copyright © Newswire Today
If you have a comment, please
Contact us.
Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.
Bookmark:
News and information
SEMATECH to Address Critical Supply Chain Challenges and Present Latest Technology Advances at SEMICON West 2013 June 17th, 2013
An Innovative material for the Green Earth: Simple and inexpensive process to make a material for CO2 adsorption June 17th, 2013
Polymer-coated catalyst protects "artificial leaf" June 17th, 2013
Efficient and inexpensive: Researchers develop catalyst material for fuel cells: Platinum-nickel nano-octahedra save 90 percent platinum June 17th, 2013
Chip Technology
SEMATECH to Address Critical Supply Chain Challenges and Present Latest Technology Advances at SEMICON West 2013 June 17th, 2013
Imec shows multiple enhancement options for next-generation FinFETs: Leading nano-electronics R&D center addresses key challenges of Germanium finFET technology at VLSI 2013 June 14th, 2013
Imec showcases innovation in RRAM R&D at VLSI Technology Symposium June 14th, 2013
Controlling magnetic clouds in graphene June 14th, 2013
Nanoelectronics
Imec shows multiple enhancement options for next-generation FinFETs: Leading nano-electronics R&D center addresses key challenges of Germanium finFET technology at VLSI 2013 June 14th, 2013
Controlling magnetic clouds in graphene June 14th, 2013
Spot-welding graphene nanoribbons atom by atom June 13th, 2013
World's first large(wafer)-scale production of III-V semiconductor nanowire June 10th, 2013
Discoveries
Working backward: Computer-aided design of zeolite templates: Rice scientists apply drug-design lessons to production of industrial minerals June 17th, 2013
An Innovative material for the Green Earth: Simple and inexpensive process to make a material for CO2 adsorption June 17th, 2013
Polymer-coated catalyst protects "artificial leaf" June 17th, 2013
Efficient and inexpensive: Researchers develop catalyst material for fuel cells: Platinum-nickel nano-octahedra save 90 percent platinum June 17th, 2013
Announcements
An Innovative material for the Green Earth: Simple and inexpensive process to make a material for CO2 adsorption June 17th, 2013
Polymer-coated catalyst protects "artificial leaf" June 17th, 2013
Efficient and inexpensive: Researchers develop catalyst material for fuel cells: Platinum-nickel nano-octahedra save 90 percent platinum June 17th, 2013
AXEON Acquires Assets of Leading Reverse Osmosis Systems Manufacturer June 17th, 2013