Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > Press > Good News For Computer Users: Future Processor And Memory Functions To Be Significantly More Efficient; Offer Higher Energy Savings

Abstract:
Proceedings of the IEEE Cites Potential for Spin-Based Technology to Replace Static RAM

Good News For Computer Users: Future Processor And Memory Functions To Be Significantly More Efficient; Offer Higher Energy Savings

Piscataway, NJ | Posted on January 3rd, 2011

According to research reported in the special issue update of Proceedings of the IEEE (www.ieee.org/proceedings) on Nanoelectronics applications, computer users will be elated to learn that efficient new systems to process information and sustain memory function are on the horizon. Many of these are new devices and forward-thinking technologies proposed to perform either the processor function or the memory function, and in some instances a universal device to perform both functions. Proceedings of the IEEE is the world's most highly-cited general-interest journal in electrical engineering and computer science since 1913.

This Nanoelectronics update issue, published by the IEEE, the world's largest technical professional association, presents 16 research papers reflecting a two-phased approach to bringing about change in both processing information and sustaining memory function. Phase one papers address extending chip functionality beyond what is thought possible today, while phase two explores ways to create a new, multifunctional and scalable platform technology such as an all spin-based logic for both processor and memory tasks.

An exciting albeit still controversial aspect of the idea of employing spin-based technology to replace RAM is described in "Spin-transistor Electronics: An Overview and Outlook" by S. Sugahara and J. Nitta, which makes a strong case for using spin instead of charge as a building block for novel integrated circuits that never need refreshing.

"Spin devices could also be used to realize non-volatile memory and reconfigurable output characteristics that are very useful and offer suitable functionalities for new integrated circuit architectures that are inaccessible to ordinary transistor circuits," explains James Hutchby, guest editor for the Nanotechnology Special Issue, as he recently commented on the current status and outlook for spin transistors.

In "In Quest of the Next Switch" by T. Theis and P. Solomon, an exploration is presented of options for reducing energy dissipation characteristic of semiconductors. The article also provides important insight into the search to replace the silicon Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and Complementary (CMOS) gate as the basic unit logic device. The potential for Graphene to play an important role in processor and memory functions for new "beyond CMOS devices" is also addressed in this issue.

In "Graphene for CMOS and Beyond CMOS Applications" by S.K. Banerjee et al., several unique properties of graphene are summarized including its very high mobility and linear band structure while also demonstrating that the unique properties of graphene can lead to discovery and development of important and new "Beyond CMOS" devices.

"While it could be many years before we see any of these graphene applications fully realized, the discovery of graphene and now the potential we see for it and have illustrated in this article offers an unparalleled opportunity for scientists to investigate these possibilities," says Hutchby.

"The overriding opportunity these research papers offer to the Nanoelectronics research community is a chance to develop a new concept and its enabling technology capable of sustaining information processing (including memory) functional scaling beyond that which is attainable with scaled Complimentary Metal Oxide Semi-conductor (CMOS)," further explains Hutchby. "And this new concept could be based on use of a new ‘token‘(e.g. electronic spin) to replace charge as the means to represent a bit of information."

To receive a copy of this Proceedings of the IEEE Nanoelectronics Network Applications issue, to read a specific paper or to coordinate an interview with a guest editor please contact Lauren Russ at or visit the website at ieeexplore.ieee.org or the journal's web site at www.ieee.org/proceedings.

####

About IEEE
IEEE, the world’s largest technical professional association, is dedicated to advancing technology for the benefit of humanity. Through its highly cited publications, conferences, technology standards, and professional and educational activities, IEEE is the trusted voice on a wide variety of areas ranging from aerospace systems, computers and telecommunications to biomedical engineering, electric power and consumer electronics.

Learn more at www.ieee.org.

About Proceedings of the IEEE

Founded in 1913, (originally as Proceedings of the IRE), Proceedings of the IEEE is the most highly-cited general –interest journal in electrical engineering and computer science. This journal provides the most in-depth tutorial and review coverage of the technical developments that shape our world, using guest authors and editors from the best research facilities, leading edge corporations and enlightened universities around the world. For more information on Proceedings of the IEEE and the latest ideas and innovative technologies, visit www.ieee.org/proceedings.

For more information, please click here

Contacts:
Lauren Russ

Copyright © IEEE

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Leti IEDM 2016 Paper Clarifies Correlation between Endurance, Window Margin and Retention in RRAM for First Time: Paper Presented at IEDM 2016 Offers Ways to Reconcile High-cycling Requirements and Instability at High Temperatures in Resistive RAM December 6th, 2016

Tokyo Institute of Technology research: 3D solutions to energy savings in silicon power transistors December 6th, 2016

Physicists decipher electronic properties of materials in work that may change transistors December 6th, 2016

Infrared instrumentation leader secures exclusive use of Vantablack coating December 5th, 2016

Possible Futures

Physicists decipher electronic properties of materials in work that may change transistors December 6th, 2016

Fast, efficient sperm tails inspire nanobiotechnology December 5th, 2016

Construction of practical quantum computers radically simplified: Scientists invent ground-breaking new method that puts quantum computers within reach December 5th, 2016

Shape matters when light meets atom: Mapping the interaction of a single atom with a single photon may inform design of quantum devices December 4th, 2016

Spintronics

Making spintronic neurons sing in unison November 18th, 2016

Scientists find technique to improve carbon superlattices for quantum electronic devices: In a paradigm shift from conventional electronic devices, exploiting the quantum properties of superlattices holds the promise of developing new technologies October 20th, 2016

A new spin on superconductivity: Harvard physicists pass spin information through a superconductor October 16th, 2016

NREL discovery creates future opportunity in quantum computing: Research into perovskites looks beyond material's usage for efficient solar cells September 9th, 2016

Chip Technology

Leti IEDM 2016 Paper Clarifies Correlation between Endurance, Window Margin and Retention in RRAM for First Time: Paper Presented at IEDM 2016 Offers Ways to Reconcile High-cycling Requirements and Instability at High Temperatures in Resistive RAM December 6th, 2016

Tokyo Institute of Technology research: 3D solutions to energy savings in silicon power transistors December 6th, 2016

Physicists decipher electronic properties of materials in work that may change transistors December 6th, 2016

Construction of practical quantum computers radically simplified: Scientists invent ground-breaking new method that puts quantum computers within reach December 5th, 2016

Nanoelectronics

Leti IEDM 2016 Paper Clarifies Correlation between Endurance, Window Margin and Retention in RRAM for First Time: Paper Presented at IEDM 2016 Offers Ways to Reconcile High-cycling Requirements and Instability at High Temperatures in Resistive RAM December 6th, 2016

Physicists decipher electronic properties of materials in work that may change transistors December 6th, 2016

Journal Nanotechnology Progress International (JONPI) Volume 6, issue 2 coming out soon! December 5th, 2016

Supersonic spray yields new nanomaterial for bendable, wearable electronics: Film of self-fused nanowires clear as glass, conducts like metal November 23rd, 2016

Announcements

Leti IEDM 2016 Paper Clarifies Correlation between Endurance, Window Margin and Retention in RRAM for First Time: Paper Presented at IEDM 2016 Offers Ways to Reconcile High-cycling Requirements and Instability at High Temperatures in Resistive RAM December 6th, 2016

Tokyo Institute of Technology research: 3D solutions to energy savings in silicon power transistors December 6th, 2016

Physicists decipher electronic properties of materials in work that may change transistors December 6th, 2016

Infrared instrumentation leader secures exclusive use of Vantablack coating December 5th, 2016

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project