Nanotechnology Now

Our NanoNews Digest Sponsors





Heifer International

Wikipedia Affiliate Button


android tablet pc

Home > Press > Fluorographene: The World’s Thinnest Insulator

A stoichiometric derivative of graphene with a fluorine atom attached to each carbon. Raman, optical, structural, micromechanical, and transport studies show that the material is qualitatively different from the known graphene-based nonstoichiometric derivatives. Fluorographene is a high-quality insulator (resistivity >1012Ù) with an optical gap of 3 eV. It inherits the mechanical strength of graphene, exhibiting a Young’s modulus of 100 N m−1 and sustaining strains of 15%. Fluorographene is inert and stable up to 400 °C even in air, similar to Teflon.
A stoichiometric derivative of graphene with a fluorine atom attached to each carbon. Raman, optical, structural, micromechanical, and transport studies show that the material is qualitatively different from the known graphene-based nonstoichiometric derivatives. Fluorographene is a high-quality insulator (resistivity >1012Ù) with an optical gap of 3 eV. It inherits the mechanical strength of graphene, exhibiting a Young’s modulus of 100 N m−1 and sustaining strains of 15%. Fluorographene is inert and stable up to 400 °C even in air, similar to Teflon.

Abstract:
The remarkable properties of graphene and Teflon have been combined in a new material by the winners of this year's Nobel Prize for Physics.

Fluorographene: The World’s Thinnest Insulator

UK | Posted on November 4th, 2010

Kostya Novoselov and Andre Geim, working at the University of Manchester, UK, first isolated graphene in 2004. It was a tricky task, as one would expect if a Nobel Prize is among the rewards, even if it did involve using humble adhesive tape to peel away surfaces one layer at a time. They found graphene to be the thinnest and strongest form of carbon, and that it could conduct heat better than any other known material. As a conductor of electricity, it performs just as well as copper. Their most recent endeavours have led to a new derivative material that is just as strong and even more stable than the original graphene, but that does not conduct electricity at all: so-called fluorographene.

Graphene itself is a single atomic layer of the material graphite, commonly found in pencils. On a molecular level, it has a flat honeycomb structure of connecting hexagons with carbon atoms at the vertices. Clouds of electrons spread across the top and bottom surfaces, which is why the material conducts electricity so well.

The current achievement of the Manchester group, working closely with international collaborators, is to place a fluorine atom at every single carbon atom, thereby destroying the electron cloud and preventing electricity from flowing under normal conditions, but not impinging on the structural integrity of the carbon framework (see graphic). In previous work, they had added hydrogen atoms instead of fluorine, but found the resulting material to be unstable at high temperatures.

The latest breakthrough is published this week in the journal Small (*). Rahul Raveendran-Nair is a postgraduate researcher at the University of Manchester and responsible for the publication. He describes fluorographene as "the thinnest possible insulator, made by attaching fluorine atoms to each of the carbon atoms in graphene. It is the first stoichiometric chemical derivative of graphene and it is a wide-gap semiconductor. Fluorographene is a mechanically strong and chemically and thermally stable compound. Properties of this new material are very similar to Teflon and we call this material 2D Teflon."

Developing a suitable method for making this 2D Teflon was not simple. "Fluorine is a highly reactive element, and it reacts with all most everything. So the major challenge was to fully fluorinate graphene without damaging the graphene and its supporting substrates. Our fluorination of single-layer graphene membranes on chemically inert support grid and bulk graphene paper at elevated temperature overcomes this technical problem," explains Raveendran-Nair.

The authors envisage that fluorographene will be used in electronics, but acknowledge that "for realistic electronic applications the electronic quality has to be improved. We hope this can be achieved very soon. Some possible electronic applications of fluorographene are its use as a tunnel barrier and as a high-quality insulator or barrier material for organic electronics." Other fields of application are also possible. For example, as a wide-gap semiconductor that is fully transparent to visible light, fluorographene could well find use in LEDs (light-emitting diodes) and displays.

The Manchester group was not the only one involved, and collaborators from China (Shenyang National Laboratory for Materials Science), The Netherlands (Radboud University of Nijmegen), Poland (Institute of Electronic Materials Technology), and Russia (Nikolaev Institute of Inorganic Chemistry) added their expertise. According to Raveendran-Nair, having such a large team helped undertake a thorough investigation of fluorographene; "All of us worked very hard to make this project successful. We used a large variety of characterisation techniques and very detailed studies to understand the properties of this new material."

During the course of the project the leaders were named as Nobel Laureates, but apparently life working in the group has not changed very much. "Even in their new busy life both professors still work very closely with all those in the group and are very much involved in the day-to-day research", says Raveendran-Nair. "Working under them is a great inspiration. It is both a rewarding and enjoyable place to undertake research."

(*) "Fluorographene: A Two-Dimensional Counterpart of Teflon", Rahul R. Nair et al., Small 2010; DOI: doi.wiley.com/10.1002/smll.201001555

####

For more information, please click here

Contacts:
Dr. Rahul Raveendran-Nair www.condmat.physics.manchester.ac.uk/people/postgrad/nair/

Department of Physics and Astronomy,
University of Manchester,
Oxford Road,
Manchester, M13 9PL, UK
Tel: +44 (0) 161 275 4074
Fax: +44 (0) 161 275 4056

Copyright © WILEY-VCH

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Industrial Nanotech, Inc. to Publish PCAOB Audited Financials July 31st, 2014

Nanostructured metal-oxide catalyst efficiently converts CO2 to methanol: Highly reactive sites at interface of 2 nanoscale components could help overcome hurdle of using CO2 as a starting point in producing useful products July 31st, 2014

Carnegie Mellon Chemists Create Nanofibers Using Unprecedented New Method July 31st, 2014

Pressure probing potential photoelectronic manufacturing compound July 31st, 2014

Possible Futures

IBM Announces $3 Billion Research Initiative to Tackle Chip Grand Challenges for Cloud and Big Data Systems: Scientists and engineers to push limits of silicon technology to 7 nanometers and below and create post-silicon future July 10th, 2014

Virus structure inspires novel understanding of onion-like carbon nanoparticles April 10th, 2014

Local girl does good March 22nd, 2014

Surface Characteristics Influence Cellular Growth on Semiconductor Material March 12th, 2014

Academic/Education

University of Manchester selects Anasys AFM-IR for coatings and corrosion research July 30th, 2014

Haydale Announces Collaboration Agreement with Swansea University’s Welsh Centre for Printing and Coatings (WCPC) July 12th, 2014

STFC takes delivery of the 100th Hitachi Tabletop SEM in the UK July 3rd, 2014

Innovation Management and the Emergence of the Nanobiotechnology Industry July 1st, 2014

Chip Technology

Pressure probing potential photoelectronic manufacturing compound July 31st, 2014

Nanometrics Reports Second Quarter 2014 Financial Results July 30th, 2014

A*STAR and industry form S$200M semiconductor R&D July 25th, 2014

A Crystal Wedding in the Nanocosmos July 23rd, 2014

Nanoelectronics

A*STAR and industry form S$200M semiconductor R&D July 25th, 2014

A Crystal Wedding in the Nanocosmos July 23rd, 2014

3-D nanostructure could benefit nanoelectronics, gas storage: Rice U. researchers predict functional advantages of 3-D boron nitride July 15th, 2014

IBM Announces $3 Billion Research Initiative to Tackle Chip Grand Challenges for Cloud and Big Data Systems: Scientists and engineers to push limits of silicon technology to 7 nanometers and below and create post-silicon future July 10th, 2014

Discoveries

Study finds physical link to strange electronic behavior: Neutron measurements offer new clues about iron-based superconductor July 31st, 2014

Nanostructured metal-oxide catalyst efficiently converts CO2 to methanol: Highly reactive sites at interface of 2 nanoscale components could help overcome hurdle of using CO2 as a starting point in producing useful products July 31st, 2014

Carnegie Mellon Chemists Create Nanofibers Using Unprecedented New Method July 31st, 2014

Pressure probing potential photoelectronic manufacturing compound July 31st, 2014

Announcements

Industrial Nanotech, Inc. to Publish PCAOB Audited Financials July 31st, 2014

Nanostructured metal-oxide catalyst efficiently converts CO2 to methanol: Highly reactive sites at interface of 2 nanoscale components could help overcome hurdle of using CO2 as a starting point in producing useful products July 31st, 2014

Carnegie Mellon Chemists Create Nanofibers Using Unprecedented New Method July 31st, 2014

Pressure probing potential photoelectronic manufacturing compound July 31st, 2014

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More














ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2014 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE