Home > Press > Made in IBM Labs: IBM Scientists Demonstrate World's Fastest Graphene Transistor
 |
| IBM Graphene RF Transistor |
Abstract:
Holds Promise for Improving Performance of Transistors
Made in IBM Labs: IBM Scientists Demonstrate World's Fastest Graphene Transistor
Yorktown Heights, NY | Posted on February 5th, 2010
In a just-published paper in the magazine Science, IBM (NYSE: IBM) researchers demonstrated a radio-frequency graphene transistor with the highest cut-off frequency achieved so far for any graphene device - 100 billion cycles/second (100 GigaHertz).
This accomplishment is a key milestone for the Carbon Electronics for RF Applications (CERA) program funded by DARPA, in an effort to develop next-generation communication devices.
The high frequency record was achieved using wafer-scale, epitaxially grown graphene using processing technology compatible to that used in advanced silicon device fabrication.
"A key advantage of graphene lies in the very high speeds in which electrons propagate, which is essential for achieving high-speed, high-performance next generation transistors," said Dr. T.C. Chen, vice president, Science and Technology, IBM Research. "The breakthrough we are announcing demonstrates clearly that graphene can be utilized to produce high performance devices and integrated circuits."
Graphene is a single atom-thick layer of carbon atoms bonded in a hexagonal honeycomb-like arrangement. This two-dimensional form of carbon has unique electrical, optical, mechanical and thermal properties and its technological applications are being explored intensely.
Uniform and high-quality graphene wafers were synthesized by thermal decomposition of a silicon carbide (SiC) substrate. The graphene transistor itself utilized a metal top-gate architecture and a novel gate insulator stack involving a polymer and a high dielectric constant oxide. The gate length was modest, 240 nanometers, leaving plenty of space for further optimization of its performance by scaling down the gate length.
It is noteworthy that the frequency performance of the graphene device already exceeds the cut-off frequency of state-of-the-art silicon transistors of the same gate length (~ 40 GigaHertz). Similar performance was obtained from devices based on graphene obtained from natural graphite, proving that high performance can be obtained from graphene of different origins. Previously, the team had demonstrated graphene transistors with a cut-off frequency of 26 GigaHertz using graphene flakes extracted from natural graphite.
####
For more information, please click here
Contacts:
Michael Loughran
IBM Media Relations
914-945-1613
Copyright © IBM
If you have a comment, please
Contact us.
Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.
Bookmark:
News and information
Aspen Aerogels Announces $22.5 Million Private Placement May 18th, 2013
NanoInk, Inc. Assets To Be Sold May 18th, 2013
Beautiful "flowers" self-assemble in a beaker: Elaborate nanostructures blossom from a chemical reaction perfected at Harvard May 17th, 2013
Scientists capture first direct proof of Hofstadter butterfly effect May 17th, 2013
Possible Futures
Lifeboat publishes its first book: The Lifeboat Foundation has published its first book, "The Human Race to the Future: What Could Happen -- and What to Do" May 14th, 2013
UC Santa Barbara History Professor's Book Elucidates, Celebrates ‘Visioneers' May 14th, 2013
Conceptual Nanomedical Lipofuscin Removal Strategy April 29th, 2013
The Global Desalination Market 2013-2023 April 24th, 2013
Chip Technology
UC Riverside scientists discovering new uses for tiny carbon nanotubes: Adding ionic liquid to nanotube films could build smaller gadgets, and create more cost effective 'Smart Windows' that darken in bright sun May 15th, 2013
Nanometrics Announces Upcoming Investor Events May 14th, 2013
HELIOS Program Develops Complete Supply Chain for Integrating Photonics with CMOS Circuit via IC Fabrication Processes May 14th, 2013
Silex Microsystems Joins ENIAC Project PROMINENT To Bring Flexible and Cost Effective Inkjet Technologies to the MEMS Manufacturing Process: Silex Will Develop New Solutions for Through-Silicon Via Manufacture and Hermetic Wafer Bonding May 13th, 2013
Nanoelectronics
Imec and Renesas collaborate on ultra-low power short range radios: Collaboration will develop robust wireless solutions for future electronics May 16th, 2013
Piezoelectric 'taxel' arrays convert motion to electronic signals for tactile imaging April 25th, 2013
Battery and Memory Device in One April 25th, 2013
Secret of the Crystal's Corners: New Nanowire Structure Has Potential to Increase Semiconductor Applications: University of Cincinnati research describes discovery of a new structure that is a fundamental game changer in the physics of semiconductor nanowires April 23rd, 2013
Announcements
Aspen Aerogels Announces $22.5 Million Private Placement May 18th, 2013
NanoInk, Inc. Assets To Be Sold May 18th, 2013
NIA Public Briefing: Nanotechnology and the Council of Europe May 17th, 2013
Scientists capture first direct proof of Hofstadter butterfly effect May 17th, 2013