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Home > News > New '1/f noise' discovery promises to improve semiconductor-based sensors

May 9th, 2007

New '1/f noise' discovery promises to improve semiconductor-based sensors

Abstract:
More sensitive sensors and detectors based on semiconductor electronics could result from new findings by researchers from the United States, Norway and Russia.

Their research has yielded a decisive step in identifying the origin of the universal "one-over-f" (1/f) noise phenomenon; "f" stands for "frequency."

"One-over-f noise appears almost everywhere, from electronic devices and fatigue in materials to traffic on roads, the distribution of stars in galaxies, and DNA sequences," said Valerii Vinokour or Argonne's Materials Science Division. "Finding the common origin of one-over-f noise in its many forms is one of the grand challenges of materials physics. Our theory establishes the origin and lower limit to one-over-f noise in semiconductor electronics, helping to optimize detectors for commercial application."

Source:
physorg.com

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