Home > News > UI researchers develop world's fastest transistor
February 5th, 2007
UI researchers develop world's fastest transistor
Abstract:
Researchers and graduate students in Engineering at the University are blowing the top off the realm of transistors. The Micro and Nano Technology building on campus is where a professor-led squad stands at the forefront of ultra-fast transistor technology.
Three years of development, $14 million and nearly a decade of research have paid off. Milton Feng, professor in electrical and computer engineering, and his team of graduate engineers have completed their development of an 845-gigahertz transistor, now the world's fastest. Three hundred gigahertz faster than its competition, the ultra-fast "Pseudomorphic Heterojunction Bipolar Transistor," or PHBT, comes from improvements on a series of several slower predecessors.
Source:
dailyillini.com
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