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February 5th, 2007
UI researchers develop world's fastest transistor
Researchers and graduate students in Engineering at the University are blowing the top off the realm of transistors. The Micro and Nano Technology building on campus is where a professor-led squad stands at the forefront of ultra-fast transistor technology.
Three years of development, $14 million and nearly a decade of research have paid off. Milton Feng, professor in electrical and computer engineering, and his team of graduate engineers have completed their development of an 845-gigahertz transistor, now the world's fastest. Three hundred gigahertz faster than its competition, the ultra-fast "Pseudomorphic Heterojunction Bipolar Transistor," or PHBT, comes from improvements on a series of several slower predecessors.
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