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Home > News > Nanowire growth through ion beams

January 21st, 2007

Nanowire growth through ion beams

Abstract:
Nanowires are expected to play an important role in the emerging fields of nanoelectronics and nanooptics. In particular, the permanently growing complexity of integrated circuit designs requires a further reduction of the size of IC components that nanowires could facilitate. Nanowires are also a possible candidate for future functional nanostructures in plasmonic devices, i.e. for information (light) propagation and manipulation below the optical diffraction limit. For these purposes, cobalt disilicide (CoSi2) is a very promising contact material due to its extremely useful properties such as low resistance, its metallic behavior, its low lattice mismatch to Si of only -1.2%. the plasmon wavelength of 1.2 µm, and its compatibility with modern silicon technology. Many efforts have been made to fabricate silicide nanowires employing the bottom-up approach without elaborate microlithography. Researchers in Germany now have demonstrated a promising technique that allows the defect-induced formation and placing of cobalt disilicide nanowires by focused ion beam synthesis in silicon directly where it is needed.

Source:
nanowerk.com

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