Home > News > ST sees phase-change memory in volume at 45-nm
May 29th, 2006
ST sees phase-change memory in volume at 45-nm
Abstract:
STMicroelectronics is backing phase-change memory as the technology most likely to succeed flash memory, and could move its development work to volume manufacture in the 45-nm process generation. Volume production of a multigigabit phase change memory is expected to arrive at the 45- or 32-nm node, some time after 2008.
Source:
EETimes
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