Home > News > Memory Design Breakthrough Can Lead to Faster Computers
January 12th, 2006
Memory Design Breakthrough Can Lead to Faster Computers
Abstract:
Imagine a computer that doesn't lose data even in a sudden power outage, or a coin-sized hard drive that could store 100 or more movies. Magnetic random-access memory, or MRAM, could make these possible, and would also offer numerous other advantages. It would, for instance, operate at much faster than the speed of ordinary memory but consume 99 percent less energy.
A team of researchers at The Johns Hopkins University, writing in the Jan. 13 issue of Physical Review Letters, has come up with one possible answer: tiny asymmetrical cobalt or nickel rings that can serve as memory cells. These "nanorings" can store a great quantity of information. They also are immune to the problem of "stray" magnetic fields, which are fields that "leak" from other kinds of magnets and can thus interfere with magnets next to them.
Source:
Johns Hopkins University
Bookmark:
| Related News Press |
Possible Futures
Discovery points path to flash-like memory for storing qubits: Rice find could hasten development of nonvolatile quantum memory April 5th, 2024
With VECSELs towards the quantum internet Fraunhofer: IAF achieves record output power with VECSEL for quantum frequency converters April 5th, 2024
Memory Technology
Utilizing palladium for addressing contact issues of buried oxide thin film transistors April 5th, 2024
Interdisciplinary: Rice team tackles the future of semiconductors Multiferroics could be the key to ultralow-energy computing October 6th, 2023
Researchers discover materials exhibiting huge magnetoresistance June 9th, 2023
 |
||
 |
||
| The latest news from around the world, FREE | ||
 |
||
|
|
||
| Premium Products | ||
 |
||
|
Only the news you want to read!
Learn More |
||
 |
||
|
Full-service, expert consulting
Learn More |
||
|
|
||