Home > News > Memory Design Breakthrough Can Lead to Faster Computers
January 12th, 2006
Memory Design Breakthrough Can Lead to Faster Computers
Abstract:
Imagine a computer that doesn't lose data even in a sudden power outage, or a coin-sized hard drive that could store 100 or more movies. Magnetic random-access memory, or MRAM, could make these possible, and would also offer numerous other advantages. It would, for instance, operate at much faster than the speed of ordinary memory but consume 99 percent less energy.
A team of researchers at The Johns Hopkins University, writing in the Jan. 13 issue of Physical Review Letters, has come up with one possible answer: tiny asymmetrical cobalt or nickel rings that can serve as memory cells. These "nanorings" can store a great quantity of information. They also are immune to the problem of "stray" magnetic fields, which are fields that "leak" from other kinds of magnets and can thus interfere with magnets next to them.
Source:
Johns Hopkins University
Bookmark:
| Related News Press |
Possible Futures
Decoding hydrogen‑bond network of electrolyte for cryogenic durable aqueous zinc‑ion batteries January 30th, 2026
COF scaffold membrane with gate‑lane nanostructure for efficient Li+/Mg2+ separation January 30th, 2026
Memory Technology
Researchers tackle the memory bottleneck stalling quantum computing October 3rd, 2025
First real-time observation of two-dimensional melting process: Researchers at Mainz University unveil new insights into magnetic vortex structures August 8th, 2025
Utilizing palladium for addressing contact issues of buried oxide thin film transistors April 5th, 2024
 |
||
 |
||
| The latest news from around the world, FREE | ||
 |
||
|
|
||
| Premium Products | ||
 |
||
|
Only the news you want to read!
Learn More |
||
 |
||
|
Full-service, expert consulting
Learn More |
||
|
|
||