Home > News > Nanomechanical memories take off
October 28th, 2004
Nanomechanical memories take off
Abstract:
Physicists in the US have made the first high-speed nanomechanical memory element from single-crystal silicon wafers. The device, developed by Pritiraj Mohanty and colleagues at Boston University, consists of a vibrating beam that can be made to switch between two distinct states. The team says its memory element could rival the current state-of-the-art in electronic data storage and processing.
Source:
nanotechweb
Related News Press |
Possible Futures
Discovery points path to flash-like memory for storing qubits: Rice find could hasten development of nonvolatile quantum memory April 5th, 2024
With VECSELs towards the quantum internet Fraunhofer: IAF achieves record output power with VECSEL for quantum frequency converters April 5th, 2024
Memory Technology
Utilizing palladium for addressing contact issues of buried oxide thin film transistors April 5th, 2024
Interdisciplinary: Rice team tackles the future of semiconductors Multiferroics could be the key to ultralow-energy computing October 6th, 2023
Researchers discover materials exhibiting huge magnetoresistance June 9th, 2023
Announcements
NRL charters Navy’s quantum inertial navigation path to reduce drift April 5th, 2024
Discovery points path to flash-like memory for storing qubits: Rice find could hasten development of nonvolatile quantum memory April 5th, 2024
The latest news from around the world, FREE | ||
Premium Products | ||
Only the news you want to read!
Learn More |
||
Full-service, expert consulting
Learn More |
||