Home > Press > Memory for future wearable electronics: Stretchable, flexible, reliable memory device inspired by the brain
In the junctions (synapses) between neurons, signals are transmitted from one neuron to the next. TRAM is made by a stack of different layers: A semiconductor molybdenum disulfide (MoS2) layer with two electrodes (drain and source), an insulating hexagonal boron nitride (h-BN) layer and graphene layer. This two-terminal architecture simulates the two neurons that made up to the synaptic structure. When the difference in the voltage of the drain and the source is sufficiently high, electrons from the drain electrode tunnel through the insulating h-BN and reach the graphene layer. Memory is written when electrons are stored in the graphene layer, and it is erased by the introduction of positive charges in the graphene layer.
CREDIT:IBS |
Abstract:
Last March, the artificial intelligence (AI) program AlphaGo beat Korean Go champion LEE Se-Dol at the Asian board game. "The game was quite tight, but AlphaGo used 1200 CPUs and 56,000 watts per hour, while Lee used only 20 watts. If a hardware that mimics the human brain structure is developed, we can operate artificial intelligence with less power," points out Professor YU Woo Jong. In collaboration with Sungkyunkwan University, researchers from the Center for Integrated Nanostructure Physics within the Institute for Basic Science (IBS), have devised a new memory device inspired by the neuron connections of the human brain. The research, published in Nature Communications, highlights the devise's highly reliable performance, long retention time and endurance. Moreover, its stretchability and flexibility makes it a promising tool for the next-generation soft electronics attached to clothes or body.
The brain is able to learn and memorize thanks to a huge number of connections between neurons. The information you memorize is transmitted through synapses from one neuron to the next as an electro-chemical signal. Inspired by these connections, IBS scientists constructed a memory called two-terminal tunnelling random access memory (TRAM), where two electrodes, referred to as drain and source, resemble the two communicating neurons of the synapse. While mainstream mobile electronics, like digital cameras and mobile phones use the so-called three-terminal flash memory, the advantage of two-terminal memories like TRAM is that two-terminal memories do not need a thick and rigid oxide layer. "Flash memory is still more reliable and has better performance, but TRAM is more flexible and can be scalable," explains Professor Yu.
TRAM is made up of a stack of one-atom-thick or a few atom-thick 2D crystal layers: One layer of the semiconductor molybdenum disulfide (MoS2) with two electrodes (drain and source), an insulating layer of hexagonal boron nitride (h-BN) and a graphene layer. In simple terms, memory is created (logical-0), read and erased (logical-1) by the flowing of charges through these layers. TRAM stores data by keeping electrons on its graphene layer. By applying different voltages between the electrodes, electrons flow from the drain to the graphene layer tunnelling through the insulating h-BN layer. The graphene layer becomes negatively charged and memory is written and stored and vice versa, when positive charges are introduced in the graphene layer, memory is erased.
IBS scientists carefully selected the thickness of the insulating h-BN layer as they found that a thickness of 7.5 nanometers allows the electrons to tunnel from the drain electrode to the graphene layer without leakages and without losing flexibility.
Flexibility and stretchability are indeed two key features of TRAM. When TRAM was fabricated on flexible plastic (PET) and stretachable silicone materials (PDMS), it could be strained up to 0.5% and 20%, respectively. In the future, TRAM can be useful to save data from flexible or wearable smartphones, eye cameras, smart surgical gloves, and body-attachable biomedical devices.
Last but not least, TRAM has better performance than other types of two-terminal memories known as phase-change random-access memory (PRAM) and resistive random-access memory (RRAM).
####
For more information, please click here
Contacts:
Carol Kim
82-428-788-133
Copyright © Institute for Basic Science
If you have a comment, please Contact us.Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.
Related Links |
Related News Press |
News and information
Simulating magnetization in a Heisenberg quantum spin chain April 5th, 2024
NRL charters Navy’s quantum inertial navigation path to reduce drift April 5th, 2024
Discovery points path to flash-like memory for storing qubits: Rice find could hasten development of nonvolatile quantum memory April 5th, 2024
Flexible Electronics
CityU awarded invention: Soft, ultrathin photonic material cools down wearable electronic devices June 30th, 2023
Liquid metal sticks to surfaces without a binding agent June 9th, 2023
Wearable electronics
CityU awarded invention: Soft, ultrathin photonic material cools down wearable electronic devices June 30th, 2023
Liquid metal sticks to surfaces without a binding agent June 9th, 2023
Possible Futures
Discovery points path to flash-like memory for storing qubits: Rice find could hasten development of nonvolatile quantum memory April 5th, 2024
With VECSELs towards the quantum internet Fraunhofer: IAF achieves record output power with VECSEL for quantum frequency converters April 5th, 2024
Chip Technology
Discovery points path to flash-like memory for storing qubits: Rice find could hasten development of nonvolatile quantum memory April 5th, 2024
Utilizing palladium for addressing contact issues of buried oxide thin film transistors April 5th, 2024
HKUST researchers develop new integration technique for efficient coupling of III-V and silicon February 16th, 2024
Nanoelectronics
Interdisciplinary: Rice team tackles the future of semiconductors Multiferroics could be the key to ultralow-energy computing October 6th, 2023
Key element for a scalable quantum computer: Physicists from Forschungszentrum Jülich and RWTH Aachen University demonstrate electron transport on a quantum chip September 23rd, 2022
Reduced power consumption in semiconductor devices September 23rd, 2022
Atomic level deposition to extend Moore’s law and beyond July 15th, 2022
Discoveries
Chemical reactions can scramble quantum information as well as black holes April 5th, 2024
New micromaterial releases nanoparticles that selectively destroy cancer cells April 5th, 2024
Utilizing palladium for addressing contact issues of buried oxide thin film transistors April 5th, 2024
Announcements
NRL charters Navy’s quantum inertial navigation path to reduce drift April 5th, 2024
Discovery points path to flash-like memory for storing qubits: Rice find could hasten development of nonvolatile quantum memory April 5th, 2024
Interviews/Book Reviews/Essays/Reports/Podcasts/Journals/White papers/Posters
Simulating magnetization in a Heisenberg quantum spin chain April 5th, 2024
Discovery points path to flash-like memory for storing qubits: Rice find could hasten development of nonvolatile quantum memory April 5th, 2024
The latest news from around the world, FREE | ||
Premium Products | ||
Only the news you want to read!
Learn More |
||
Full-service, expert consulting
Learn More |
||