Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > Press > Low-power tunneling transistor for high-performance devices at low voltage

Transmission electron microscope cross-section of the vertical TFET. The interface of the source and channel is the point where electron tunneling occurs. ILD is the interlayer dielectric separating the contacts.  Top plane contacts are Gold (Au), Palladium (Pd), and Molybdenum (Mo).
Image: Suman Datta/Penn State
Transmission electron microscope cross-section of the vertical TFET. The interface of the source and channel is the point where electron tunneling occurs. ILD is the interlayer dielectric separating the contacts. Top plane contacts are Gold (Au), Palladium (Pd), and Molybdenum (Mo).

Image: Suman Datta/Penn State

Abstract:
A new type of transistor that could make possible fast and low-power computing devices for energy-constrained applications such as smart sensor networks, implantable medical electronics and ultra-mobile computing is feasible, according to Penn State researchers. Called a near broken-gap tunnel field effect transistor (TFET), the new device uses the quantum mechanical tunneling of electrons through an ultrathin energy barrier to provide high current at low voltage.

Low-power tunneling transistor for high-performance devices at low voltage

Washington, DC | Posted on December 12th, 2013

Penn State, the National Institute of Standards and Technology and IQE, a specialty wafer manufacturer, jointly presented their findings at the International Electron Devices Meeting in Washington, D.C. The IEDM meeting includes representatives from all of the major chip companies and is the recognized forum for reporting breakthroughs in semiconductor and electronic technologies.

Tunnel field effect transistors are considered to be a potential replacement for current CMOS transistors, as device makers search for a way to continue shrinking the size of transistors and packing more transistors into a given area. The main challenge facing current chip technology is that as size decreases, the power required to operate transistors does not decrease in step. The results can be seen in batteries that drain faster and increasing heat dissipation that can damage delicate electronic circuits. Various new types of transistor architecture using materials other than the standard silicon are being studied to overcome the power consumption challenge.

"This transistor has previously been developed in our lab to replace MOSFET transistors for logic applications and to address power issues," said lead author and Penn State graduate student Bijesh Rajamohanan. "In this work we went a step beyond and showed the capability of operating at high frequency, which is handy for applications where power concerns are critical, such as processing and transmitting information from devices implanted inside the human body."

For implanted devices, generating too much power and heat can damage the tissue that is being monitored, while draining the battery requires frequent replacement surgery. The researchers, led by Suman Datta, professor of electrical engineering, tuned the material composition of the indium gallium arsenide/gallium arsenide antimony so that the energy barrier was close to zero -- or near broken gap, which allowed electrons to tunnel through the barrier when desired. To improve amplification, the researchers moved all the contacts to the same plane at the top surface of the vertical transistor.

This device was developed as part of a larger program sponsored by the National Science Foundation through the Nanosystems Engineering Research Center for Advanced Self-Powered Systems of Integrated Sensors and Technologies (NERC-ASSIST). The broader goal of the ASSIST program is to develop battery-free, body-powered wearable health monitoring systems with Penn State, North Carolina State University, University of Virginia, and Florida International University as participating institutions.

The paper, "Demonstration of InGaAs/GaAsSb Near Broken-gap Tunnel FET with Ion=740µA/µm, GM=700µS/µm and Gigahertz Switching Performance at VDS=0.5V," will be available in the conference proceedings publication of the IEDM.

####

For more information, please click here

Contacts:
Walt Mills
(814) 865-0285


A'ndrea Elyse Messer
(814) 865-9481


Dr. Datta


Mr. Rajamohanan

Copyright © Penn State

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Chains of nanogold – forged with atomic precision September 23rd, 2016

Tattoo therapy could ease chronic disease: Rice-made nanoparticles tested at Baylor College of Medicine may help control autoimmune diseases September 23rd, 2016

Nanotech Grants Options September 22nd, 2016

Coffee-infused foam removes lead from contaminated water September 21st, 2016

As You Sow’s Shareholder Inquiry on Nanomaterials Fought by Walgreens: Shareholder Proposal Addresses Recent Laboratory Tests Finding Harmful Nanomaterials in Walgreens’ Store Brand Infant Formula September 21st, 2016

Imaging

Oxford Instruments is ‘Bringing the Nanoworld Together’ in India once again - 22 - 23 November 2016 | IISc Bangalore September 21st, 2016

Bruker Introduces Complete Commercial AFM-Based SECM Solution: PeakForce SECM Mode Enables Previously Unobtainable Electrochemical Information September 20th, 2016

Physics

New breed of optical soliton wave discovered September 9th, 2016

NREL discovery creates future opportunity in quantum computing: Research into perovskites looks beyond material's usage for efficient solar cells September 9th, 2016

Location matters in the self-assembly of nanoclusters: Iowa State University scientists have developed a new formulation to explain an aspect of the self-assembly of nanoclusters on surfaces that has broad applications for nanotechnology September 8th, 2016

University of Akron researchers find thin layers of water can become ice-like at room temperature: Results could lead to an assortment of anti-friction solutions August 30th, 2016

Nanomedicine

Tattoo therapy could ease chronic disease: Rice-made nanoparticles tested at Baylor College of Medicine may help control autoimmune diseases September 23rd, 2016

BBI Solutions launches innovative conjugate blocking technology that enhances signal intensity for lateral flow immunoassays September 20th, 2016

Iran to hold intl. school on application of nanomaterials in medicine September 20th, 2016

Graphene nanoribbons show promise for healing spinal injuries: Rice University scientists develop Texas-PEG to help knit severed, damaged spinal cords September 19th, 2016

Sensors

Chains of nanogold – forged with atomic precision September 23rd, 2016

Speedy bacteria detector could help prevent foodborne illnesses September 21st, 2016

NIST Patents Single-Photon Detector for Potential Encryption and Sensing Apps September 16th, 2016

Notre Dame researchers find transition point in semiconductor nanomaterials September 6th, 2016

Discoveries

Chains of nanogold – forged with atomic precision September 23rd, 2016

Tattoo therapy could ease chronic disease: Rice-made nanoparticles tested at Baylor College of Medicine may help control autoimmune diseases September 23rd, 2016

Speedy bacteria detector could help prevent foodborne illnesses September 21st, 2016

Coffee-infused foam removes lead from contaminated water September 21st, 2016

Announcements

Chains of nanogold – forged with atomic precision September 23rd, 2016

Tattoo therapy could ease chronic disease: Rice-made nanoparticles tested at Baylor College of Medicine may help control autoimmune diseases September 23rd, 2016

Nanotech Grants Options September 22nd, 2016

Coffee-infused foam removes lead from contaminated water September 21st, 2016

Tools

Oxford Instruments is ‘Bringing the Nanoworld Together’ in India once again - 22 - 23 November 2016 | IISc Bangalore September 21st, 2016

Bruker Introduces Complete Commercial AFM-Based SECM Solution: PeakForce SECM Mode Enables Previously Unobtainable Electrochemical Information September 20th, 2016

Oxford Instruments Asylum Research Announces New SurfRider Econo Board Probes for Routine AFM Measurements September 19th, 2016

Electron beam microscope directly writes nanoscale features in liquid with metal ink September 16th, 2016

Quantum nanoscience

Chains of nanogold – forged with atomic precision September 23rd, 2016

Notre Dame researchers find transition point in semiconductor nanomaterials September 6th, 2016

NREL Discovery Creates Future Opportunity in Quantum Computing: Research into perovskites looks beyond material’s usage for efficient solar cells September 1st, 2016

Light and matter merge in quantum coupling: Rice University physicists probe photon-electron interactions in vacuum cavity experiments August 24th, 2016

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







Car Brands
Buy website traffic