Nanotechnology Now

Our NanoNews Digest Sponsors





Heifer International

Wikipedia Affiliate Button


DHgate

Home > Press > Low-power tunneling transistor for high-performance devices at low voltage

Transmission electron microscope cross-section of the vertical TFET. The interface of the source and channel is the point where electron tunneling occurs. ILD is the interlayer dielectric separating the contacts.  Top plane contacts are Gold (Au), Palladium (Pd), and Molybdenum (Mo).
Image: Suman Datta/Penn State
Transmission electron microscope cross-section of the vertical TFET. The interface of the source and channel is the point where electron tunneling occurs. ILD is the interlayer dielectric separating the contacts. Top plane contacts are Gold (Au), Palladium (Pd), and Molybdenum (Mo).

Image: Suman Datta/Penn State

Abstract:
A new type of transistor that could make possible fast and low-power computing devices for energy-constrained applications such as smart sensor networks, implantable medical electronics and ultra-mobile computing is feasible, according to Penn State researchers. Called a near broken-gap tunnel field effect transistor (TFET), the new device uses the quantum mechanical tunneling of electrons through an ultrathin energy barrier to provide high current at low voltage.

Low-power tunneling transistor for high-performance devices at low voltage

Washington, DC | Posted on December 12th, 2013

Penn State, the National Institute of Standards and Technology and IQE, a specialty wafer manufacturer, jointly presented their findings at the International Electron Devices Meeting in Washington, D.C. The IEDM meeting includes representatives from all of the major chip companies and is the recognized forum for reporting breakthroughs in semiconductor and electronic technologies.

Tunnel field effect transistors are considered to be a potential replacement for current CMOS transistors, as device makers search for a way to continue shrinking the size of transistors and packing more transistors into a given area. The main challenge facing current chip technology is that as size decreases, the power required to operate transistors does not decrease in step. The results can be seen in batteries that drain faster and increasing heat dissipation that can damage delicate electronic circuits. Various new types of transistor architecture using materials other than the standard silicon are being studied to overcome the power consumption challenge.

"This transistor has previously been developed in our lab to replace MOSFET transistors for logic applications and to address power issues," said lead author and Penn State graduate student Bijesh Rajamohanan. "In this work we went a step beyond and showed the capability of operating at high frequency, which is handy for applications where power concerns are critical, such as processing and transmitting information from devices implanted inside the human body."

For implanted devices, generating too much power and heat can damage the tissue that is being monitored, while draining the battery requires frequent replacement surgery. The researchers, led by Suman Datta, professor of electrical engineering, tuned the material composition of the indium gallium arsenide/gallium arsenide antimony so that the energy barrier was close to zero -- or near broken gap, which allowed electrons to tunnel through the barrier when desired. To improve amplification, the researchers moved all the contacts to the same plane at the top surface of the vertical transistor.

This device was developed as part of a larger program sponsored by the National Science Foundation through the Nanosystems Engineering Research Center for Advanced Self-Powered Systems of Integrated Sensors and Technologies (NERC-ASSIST). The broader goal of the ASSIST program is to develop battery-free, body-powered wearable health monitoring systems with Penn State, North Carolina State University, University of Virginia, and Florida International University as participating institutions.

The paper, "Demonstration of InGaAs/GaAsSb Near Broken-gap Tunnel FET with Ion=740µA/µm, GM=700µS/µm and Gigahertz Switching Performance at VDS=0.5V," will be available in the conference proceedings publication of the IEDM.

####

For more information, please click here

Contacts:
Walt Mills
(814) 865-0285


A'ndrea Elyse Messer
(814) 865-9481


Dr. Datta


Mr. Rajamohanan

Copyright © Penn State

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

QEOS and GLOBALFOUNDRIES to Offer Industry’s First CMOS Platform for MillimeterWave Markets: GLOBALSOLUTIONSSM Partnership will enable next-generation wireless technologies for applications in IoT, 5G and automotive September 3rd, 2015

GLOBALFOUNDRIES and Catena Partner to Provide Next-Generation RF Connectivity Solutions for Growing Wireless Markets: Catena Wi-Fi and Bluetooth RF technologies available on GLOBALFOUNDRIES 28nm Super Low Power Process technology September 3rd, 2015

Making nanowires from protein and DNA September 3rd, 2015

Making fuel from light: Argonne research sheds light on photosynthesis and creation of solar fuel September 3rd, 2015

Imaging

JEOL Introduces New Best-in-Class Field Emission SEM September 2nd, 2015

Physics

Hot electrons point the way to perfect light absorption: Physicists study how to achieve perfect absorption of light with the help of rough ultrathin films September 1st, 2015

Scientists 'squeeze' light one particle at a time: A team of scientists have measured a bizarre effect in quantum physics, in which individual particles of light are said to have been 'squeezed' -- an achievement which at least one textbook had written off as hopeless September 1st, 2015

Using ultrathin sheets to discover new class of wrapped shapes: UMass Amherst materials researchers describe a new regime of wrapped shapes August 31st, 2015

Seeing quantum motion August 30th, 2015

Nanomedicine

Making nanowires from protein and DNA September 3rd, 2015

Reversible Writing with Light: Self-assembling nanoparticles take their cues from their surroundings September 3rd, 2015

Silk bio-ink could help advance tissue engineering with 3-D printers September 2nd, 2015

Using DNA origami to build nanodevices of the future September 1st, 2015

Sensors

Successful boron-doping of graphene nanoribbon August 27th, 2015

Nanotechnology that will impact the Security & Defense sectors to be discussed at NanoSD2015 conference August 25th, 2015

High Precision, High Stability XYZ Microscope Stages, with Capacitive Feedback August 18th, 2015

Setting ground rules for nanotechnology research: Two new projects set the stage for nanotechnology research to move into Big Data August 18th, 2015

Discoveries

QEOS and GLOBALFOUNDRIES to Offer Industry’s First CMOS Platform for MillimeterWave Markets: GLOBALSOLUTIONSSM Partnership will enable next-generation wireless technologies for applications in IoT, 5G and automotive September 3rd, 2015

Making nanowires from protein and DNA September 3rd, 2015

Making fuel from light: Argonne research sheds light on photosynthesis and creation of solar fuel September 3rd, 2015

Reversible Writing with Light: Self-assembling nanoparticles take their cues from their surroundings September 3rd, 2015

Announcements

QEOS and GLOBALFOUNDRIES to Offer Industry’s First CMOS Platform for MillimeterWave Markets: GLOBALSOLUTIONSSM Partnership will enable next-generation wireless technologies for applications in IoT, 5G and automotive September 3rd, 2015

GLOBALFOUNDRIES and Catena Partner to Provide Next-Generation RF Connectivity Solutions for Growing Wireless Markets: Catena Wi-Fi and Bluetooth RF technologies available on GLOBALFOUNDRIES 28nm Super Low Power Process technology September 3rd, 2015

Making nanowires from protein and DNA September 3rd, 2015

Making fuel from light: Argonne research sheds light on photosynthesis and creation of solar fuel September 3rd, 2015

Tools

Oxford Instruments’ Triton Cryofree dilution refrigerator selected by Oxford University for developing scalable quantum nanodevices September 2nd, 2015

JEOL Introduces New Best-in-Class Field Emission SEM September 2nd, 2015

Atomic Force Microscopes from Asylum Research Guide the Development of Thin Film Deposition and Etch Processes September 2nd, 2015

Nanolab Technologies LEAPS Forward with High-Performance Analysis Services to the World: Nanolab Orders Advanced Local Electrode Atom Probe (LEAP®) Microscope from CAMECA Unit of AMETEK Materials Analysis Division August 27th, 2015

Quantum nanoscience

Scientists 'squeeze' light one particle at a time: A team of scientists have measured a bizarre effect in quantum physics, in which individual particles of light are said to have been 'squeezed' -- an achievement which at least one textbook had written off as hopeless September 1st, 2015

Seeing quantum motion August 30th, 2015

Quantum diffraction at a breath of nothing: Physicists build stable diffraction structure in atomically thin graphene August 25th, 2015

Southampton scientists find new way to detect ortho-para conversion in water August 25th, 2015

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







Car Brands
Buy website traffic