Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > Press > Low-power tunneling transistor for high-performance devices at low voltage

Transmission electron microscope cross-section of the vertical TFET. The interface of the source and channel is the point where electron tunneling occurs. ILD is the interlayer dielectric separating the contacts.  Top plane contacts are Gold (Au), Palladium (Pd), and Molybdenum (Mo).
Image: Suman Datta/Penn State
Transmission electron microscope cross-section of the vertical TFET. The interface of the source and channel is the point where electron tunneling occurs. ILD is the interlayer dielectric separating the contacts. Top plane contacts are Gold (Au), Palladium (Pd), and Molybdenum (Mo).

Image: Suman Datta/Penn State

Abstract:
A new type of transistor that could make possible fast and low-power computing devices for energy-constrained applications such as smart sensor networks, implantable medical electronics and ultra-mobile computing is feasible, according to Penn State researchers. Called a near broken-gap tunnel field effect transistor (TFET), the new device uses the quantum mechanical tunneling of electrons through an ultrathin energy barrier to provide high current at low voltage.

Low-power tunneling transistor for high-performance devices at low voltage

Washington, DC | Posted on December 12th, 2013

Penn State, the National Institute of Standards and Technology and IQE, a specialty wafer manufacturer, jointly presented their findings at the International Electron Devices Meeting in Washington, D.C. The IEDM meeting includes representatives from all of the major chip companies and is the recognized forum for reporting breakthroughs in semiconductor and electronic technologies.

Tunnel field effect transistors are considered to be a potential replacement for current CMOS transistors, as device makers search for a way to continue shrinking the size of transistors and packing more transistors into a given area. The main challenge facing current chip technology is that as size decreases, the power required to operate transistors does not decrease in step. The results can be seen in batteries that drain faster and increasing heat dissipation that can damage delicate electronic circuits. Various new types of transistor architecture using materials other than the standard silicon are being studied to overcome the power consumption challenge.

"This transistor has previously been developed in our lab to replace MOSFET transistors for logic applications and to address power issues," said lead author and Penn State graduate student Bijesh Rajamohanan. "In this work we went a step beyond and showed the capability of operating at high frequency, which is handy for applications where power concerns are critical, such as processing and transmitting information from devices implanted inside the human body."

For implanted devices, generating too much power and heat can damage the tissue that is being monitored, while draining the battery requires frequent replacement surgery. The researchers, led by Suman Datta, professor of electrical engineering, tuned the material composition of the indium gallium arsenide/gallium arsenide antimony so that the energy barrier was close to zero -- or near broken gap, which allowed electrons to tunnel through the barrier when desired. To improve amplification, the researchers moved all the contacts to the same plane at the top surface of the vertical transistor.

This device was developed as part of a larger program sponsored by the National Science Foundation through the Nanosystems Engineering Research Center for Advanced Self-Powered Systems of Integrated Sensors and Technologies (NERC-ASSIST). The broader goal of the ASSIST program is to develop battery-free, body-powered wearable health monitoring systems with Penn State, North Carolina State University, University of Virginia, and Florida International University as participating institutions.

The paper, "Demonstration of InGaAs/GaAsSb Near Broken-gap Tunnel FET with Ion=740µA/µm, GM=700µS/µm and Gigahertz Switching Performance at VDS=0.5V," will be available in the conference proceedings publication of the IEDM.

####

For more information, please click here

Contacts:
Walt Mills
(814) 865-0285


A'ndrea Elyse Messer
(814) 865-9481


Dr. Datta


Mr. Rajamohanan

Copyright © Penn State

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Remote-control shoots laser at nano-gold to turn on cancer-killing immune cells April 20th, 2018

New qubit now works without breaks: A universal design for superconducting qubits has been created April 19th, 2018

Observing biological nanotransporters: Chemistry April 19th, 2018

Salt boosts creation of 2-D materials: Rice University scientists show how salt lowers reaction temperatures to make novel materials April 18th, 2018

Individual impurity atoms detectable in graphene April 18th, 2018

Physics

New qubit now works without breaks: A universal design for superconducting qubits has been created April 19th, 2018

Imaging

Grand Opening of UC Irvine Materials Research Institute (IMRI) to Spotlight JEOL Center for Nanoscale Solutions: Renowned Materials Scientists to Present at the 1st International Symposium on Advanced Microscopy and Spectroscopy (ISAMS) April 18th, 2018

Individual impurity atoms detectable in graphene April 18th, 2018

Nanomedicine

Remote-control shoots laser at nano-gold to turn on cancer-killing immune cells April 20th, 2018

Observing biological nanotransporters: Chemistry April 19th, 2018

Nanobiotix Shows NBTXR3 Nanoparticles Can Stoke Anti-Tumor Immune Response April 17th, 2018

Tiny nanomachine successfully completes test drive: Researchers at the University of Bonn and the research institute Caesar build a one-wheeled vehicle out of DNA rings April 11th, 2018

Sensors

Salt boosts creation of 2-D materials: Rice University scientists show how salt lowers reaction temperatures to make novel materials April 18th, 2018

Doing the nano-shimmy: New device modulates light and amplifies tiny signals April 12th, 2018

Scientists Use Nanotechnology to Detect Molecular Biomarker for Osteoarthritis March 13th, 2018

Graphene on toast, anyone? Rice University scientists create patterned graphene onto food, paper, cloth, cardboard February 13th, 2018

Discoveries

Remote-control shoots laser at nano-gold to turn on cancer-killing immune cells April 20th, 2018

New qubit now works without breaks: A universal design for superconducting qubits has been created April 19th, 2018

Observing biological nanotransporters: Chemistry April 19th, 2018

Salt boosts creation of 2-D materials: Rice University scientists show how salt lowers reaction temperatures to make novel materials April 18th, 2018

Announcements

Remote-control shoots laser at nano-gold to turn on cancer-killing immune cells April 20th, 2018

New qubit now works without breaks: A universal design for superconducting qubits has been created April 19th, 2018

Observing biological nanotransporters: Chemistry April 19th, 2018

Salt boosts creation of 2-D materials: Rice University scientists show how salt lowers reaction temperatures to make novel materials April 18th, 2018

Tools

Observing biological nanotransporters: Chemistry April 19th, 2018

Grand Opening of UC Irvine Materials Research Institute (IMRI) to Spotlight JEOL Center for Nanoscale Solutions: Renowned Materials Scientists to Present at the 1st International Symposium on Advanced Microscopy and Spectroscopy (ISAMS) April 18th, 2018

Individual impurity atoms detectable in graphene April 18th, 2018

HTA to Present European Strategy for Competitive Micro- and Nanotechnologies & Smart Systems: Special Event in Brussels on April 24 Gathers Research Institutes’ CEOs, European Commissioners and Key European Industrials April 17th, 2018

Quantum nanoscience

New qubit now works without breaks: A universal design for superconducting qubits has been created April 19th, 2018

Quantum shift shows itself in coupled light and matter: Rice University scientists corral, quantify subtle movement in condensed matter system April 16th, 2018

When superconductivity disappears in the core of a quantum tube: By replacing the electrons with ultra-cold atoms, a group of physicists has created a perfectly clean material, unveiling new states of matter at the quantum level April 16th, 2018

Phononic SEIRA -- enhancing light-molecule interactions via crystal lattice vibrations April 10th, 2018

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project