Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button


DHgate

Home > Press > Low-power tunneling transistor for high-performance devices at low voltage

Transmission electron microscope cross-section of the vertical TFET. The interface of the source and channel is the point where electron tunneling occurs. ILD is the interlayer dielectric separating the contacts.  Top plane contacts are Gold (Au), Palladium (Pd), and Molybdenum (Mo).
Image: Suman Datta/Penn State
Transmission electron microscope cross-section of the vertical TFET. The interface of the source and channel is the point where electron tunneling occurs. ILD is the interlayer dielectric separating the contacts. Top plane contacts are Gold (Au), Palladium (Pd), and Molybdenum (Mo).

Image: Suman Datta/Penn State

Abstract:
A new type of transistor that could make possible fast and low-power computing devices for energy-constrained applications such as smart sensor networks, implantable medical electronics and ultra-mobile computing is feasible, according to Penn State researchers. Called a near broken-gap tunnel field effect transistor (TFET), the new device uses the quantum mechanical tunneling of electrons through an ultrathin energy barrier to provide high current at low voltage.

Low-power tunneling transistor for high-performance devices at low voltage

Washington, DC | Posted on December 12th, 2013

Penn State, the National Institute of Standards and Technology and IQE, a specialty wafer manufacturer, jointly presented their findings at the International Electron Devices Meeting in Washington, D.C. The IEDM meeting includes representatives from all of the major chip companies and is the recognized forum for reporting breakthroughs in semiconductor and electronic technologies.

Tunnel field effect transistors are considered to be a potential replacement for current CMOS transistors, as device makers search for a way to continue shrinking the size of transistors and packing more transistors into a given area. The main challenge facing current chip technology is that as size decreases, the power required to operate transistors does not decrease in step. The results can be seen in batteries that drain faster and increasing heat dissipation that can damage delicate electronic circuits. Various new types of transistor architecture using materials other than the standard silicon are being studied to overcome the power consumption challenge.

"This transistor has previously been developed in our lab to replace MOSFET transistors for logic applications and to address power issues," said lead author and Penn State graduate student Bijesh Rajamohanan. "In this work we went a step beyond and showed the capability of operating at high frequency, which is handy for applications where power concerns are critical, such as processing and transmitting information from devices implanted inside the human body."

For implanted devices, generating too much power and heat can damage the tissue that is being monitored, while draining the battery requires frequent replacement surgery. The researchers, led by Suman Datta, professor of electrical engineering, tuned the material composition of the indium gallium arsenide/gallium arsenide antimony so that the energy barrier was close to zero -- or near broken gap, which allowed electrons to tunnel through the barrier when desired. To improve amplification, the researchers moved all the contacts to the same plane at the top surface of the vertical transistor.

This device was developed as part of a larger program sponsored by the National Science Foundation through the Nanosystems Engineering Research Center for Advanced Self-Powered Systems of Integrated Sensors and Technologies (NERC-ASSIST). The broader goal of the ASSIST program is to develop battery-free, body-powered wearable health monitoring systems with Penn State, North Carolina State University, University of Virginia, and Florida International University as participating institutions.

The paper, "Demonstration of InGaAs/GaAsSb Near Broken-gap Tunnel FET with Ion=740µA/µm, GM=700µS/µm and Gigahertz Switching Performance at VDS=0.5V," will be available in the conference proceedings publication of the IEDM.

####

For more information, please click here

Contacts:
Walt Mills
(814) 865-0285


A'ndrea Elyse Messer
(814) 865-9481


Dr. Datta


Mr. Rajamohanan

Copyright © Penn State

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Scientists take key step toward custom-made nanoscale chemical factories: Berkeley Lab researchers part of team that creates new function in tiny protein shell structures February 6th, 2016

Discovery of the specific properties of graphite-based carbon materials February 6th, 2016

Hepatitis virus-like particles as potential cancer treatment February 5th, 2016

Organic crystals allow creating flexible electronic devices: The researchers from the Faculty of Physics of the Moscow State University have grown organic crystals that allow creating flexible electronic devices February 5th, 2016

Physics

Polar vortices observed in ferroelectric: New state of matter holds promise for ultracompact data storage and processing February 4th, 2016

The quantum fridge: It all comes down to quantum physics: scientists at TU Wien have analyzed why some gases can be cooled down to extremely low temperatures February 2nd, 2016

Unconventional superconductivity near absolute zero temperature: Quantum critical point could be the reason for high temperature superconductivity February 2nd, 2016

Electrons and liquid helium advance understanding of zero-resistance: Study of electrons on liquid helium systems sheds light on zero-resistance phenomenon in semiconductors February 2nd, 2016

Imaging

Cornell researchers create first self-assembled superconductor February 1st, 2016

New record in nanoelectronics at ultralow temperatures January 28th, 2016

LC.300 Series Nanopositioning Controller from nPoint January 28th, 2016

Researchers from the California NanoSystems Institute at UCLA have created a new technique that greatly enhances digital microscopy images January 27th, 2016

Nanomedicine

Scientists take key step toward custom-made nanoscale chemical factories: Berkeley Lab researchers part of team that creates new function in tiny protein shell structures February 6th, 2016

Study reveals how herpes virus tricks the immune system February 5th, 2016

Hepatitis virus-like particles as potential cancer treatment February 5th, 2016

Researchers discover new phase of boron nitride and a new way to create pure c-BN February 5th, 2016

Sensors

Scientists have put a high precision blood assay into a simple test strip: Researchers have developed a new biosensor test system based on magnetic nanoparticles February 3rd, 2016

Nanosheet growth technique could revolutionize nanomaterial production February 1st, 2016

New record in nanoelectronics at ultralow temperatures January 28th, 2016

NBC LEARN DEBUTS SIX-PART VIDEO SERIES, “NANOTECHNOLOGY: SUPER SMALL SCIENCE” Produced by NBC Learn in partnership with the National Science Foundation, and narrated by NBC News/MSNBC’s Kate Snow, series highlights leading research in nanotechnology January 25th, 2016

Discoveries

Scientists take key step toward custom-made nanoscale chemical factories: Berkeley Lab researchers part of team that creates new function in tiny protein shell structures February 6th, 2016

Discovery of the specific properties of graphite-based carbon materials February 6th, 2016

Study reveals how herpes virus tricks the immune system February 5th, 2016

Hepatitis virus-like particles as potential cancer treatment February 5th, 2016

Announcements

Scientists take key step toward custom-made nanoscale chemical factories: Berkeley Lab researchers part of team that creates new function in tiny protein shell structures February 6th, 2016

Discovery of the specific properties of graphite-based carbon materials February 6th, 2016

Study reveals how herpes virus tricks the immune system February 5th, 2016

Hepatitis virus-like particles as potential cancer treatment February 5th, 2016

Tools

Researchers discover new phase of boron nitride and a new way to create pure c-BN February 5th, 2016

Cornell researchers create first self-assembled superconductor February 1st, 2016

New record in nanoelectronics at ultralow temperatures January 28th, 2016

LC.300 Series Nanopositioning Controller from nPoint January 28th, 2016

Quantum nanoscience

Spin dynamics in an atomically thin semi-conductor February 1st, 2016

New record in nanoelectronics at ultralow temperatures January 28th, 2016

Leti to Host Workshop on New Photonics Applications During SPIE Photonics West: Researchers also Will Present Four Invited Papers At Feb. 13-18 Conference, 14 Papers, Overall January 25th, 2016

Mechanical quanta see the light January 20th, 2016

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







Car Brands
Buy website traffic