Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > News > Tightening Graphene Like a Drumhead Changes Its Electrical Properties

July 12th, 2012

Tightening Graphene Like a Drumhead Changes Its Electrical Properties

Abstract:
The main preoccupation with graphene research has been trying to impart a band gap to the wonder material. Researchers at the University of Wisconsin-Milwaukee were able to get graphene to behave like a semiconductor earlier this year by making a new variety of graphene dubbed "graphene monoxide". But now researchers at National Institute of Standards and Technology (NIST) and the University of Maryland discovered they could do it by just treating graphene like a drumhead.

The research was published in the journal Science under the title "Electromechanical Properties of Graphene Drumheads" and is available with a subscription.

Source:
spectrum.ieee.org

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Leti IEDM 2016 Paper Clarifies Correlation between Endurance, Window Margin and Retention in RRAM for First Time: Paper Presented at IEDM 2016 Offers Ways to Reconcile High-cycling Requirements and Instability at High Temperatures in Resistive RAM December 6th, 2016

Tokyo Institute of Technology research: 3D solutions to energy savings in silicon power transistors December 6th, 2016

Physicists decipher electronic properties of materials in work that may change transistors December 6th, 2016

Infrared instrumentation leader secures exclusive use of Vantablack coating December 5th, 2016

Construction of practical quantum computers radically simplified: Scientists invent ground-breaking new method that puts quantum computers within reach December 5th, 2016

Graphene/ Graphite

Physicists decipher electronic properties of materials in work that may change transistors December 6th, 2016

Bumpy surfaces, graphene beat the heat in devices: Rice University theory shows way to enhance heat sinks in future microelectronics November 29th, 2016

Uncovering the secrets of friction on graphene: Sliding on flexible graphene surfaces has been uncharted territory until now November 23rd, 2016

2-D material a brittle surprise: Rice University researchers finds molybdenum diselenide not as strong as they thought November 14th, 2016

Blog sites

Novel Electrode Structure Provides New Promise for Lithium-Sulfur Batteries December 3rd, 2016

Laboratories

Working under pressure: Diamond micro-anvils with huge pressures will create new materials October 19th, 2016

Diamonds aren't forever: Sandia, Harvard team create first quantum computer bridge October 15th, 2016

Scientists Find Static "Stripes" of Electrical Charge in Copper-Oxide Superconductor: Fixed arrangement of charges coexists with material's ability to conduct electricity without resistance October 14th, 2016

Tomoyasu Mani Wins 2016 Blavatnik Regional Award for Young Scientists: Award recognizes his work at Brookhaven Lab to understand the physical processes occurring in organic materials used to harness solar energy October 13th, 2016

Govt.-Legislation/Regulation/Funding/Policy

Physicists decipher electronic properties of materials in work that may change transistors December 6th, 2016

Construction of practical quantum computers radically simplified: Scientists invent ground-breaking new method that puts quantum computers within reach December 5th, 2016

Shape matters when light meets atom: Mapping the interaction of a single atom with a single photon may inform design of quantum devices December 4th, 2016

Research Study: MetaSOLTM Shatters Solar Panel Efficiency Forecasts with Innovative New Coating: Coating Provides 1.2 Percent Absolute Enhancement to Triple Junction Solar Cells December 2nd, 2016

Chip Technology

Leti IEDM 2016 Paper Clarifies Correlation between Endurance, Window Margin and Retention in RRAM for First Time: Paper Presented at IEDM 2016 Offers Ways to Reconcile High-cycling Requirements and Instability at High Temperatures in Resistive RAM December 6th, 2016

Tokyo Institute of Technology research: 3D solutions to energy savings in silicon power transistors December 6th, 2016

Physicists decipher electronic properties of materials in work that may change transistors December 6th, 2016

Construction of practical quantum computers radically simplified: Scientists invent ground-breaking new method that puts quantum computers within reach December 5th, 2016

Discoveries

Leti IEDM 2016 Paper Clarifies Correlation between Endurance, Window Margin and Retention in RRAM for First Time: Paper Presented at IEDM 2016 Offers Ways to Reconcile High-cycling Requirements and Instability at High Temperatures in Resistive RAM December 6th, 2016

Tokyo Institute of Technology research: 3D solutions to energy savings in silicon power transistors December 6th, 2016

Physicists decipher electronic properties of materials in work that may change transistors December 6th, 2016

Fast, efficient sperm tails inspire nanobiotechnology December 5th, 2016

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project