Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > Press > Imec develops procedure for carrier profiling in nanowire-based transistors

Quantitative 2D-carrier distribution for nanowire diameters of 400nm and 100nm. The difference in drain doping is reflected in the TFET off current.
Quantitative 2D-carrier distribution for nanowire diameters of 400nm and 100nm. The difference in drain doping is reflected in the TFET off current.

Abstract:
Imec's researchers have developed a methodology to quantitatively map the distribution of active dopants in confined 3D-volumes. This is an important step towards in-depth understanding of transistors based on semiconductor nanowires. The new methodology is based on high-vacuum scanning spreading resistance microscopy (HV-SSRM).

Imec develops procedure for carrier profiling in nanowire-based transistors

Leuven, Belgium | Posted on June 16th, 2011

Semiconductor nanowires are one of the most promising building blocks for future nanoelectronic devices such as transistors, sensors and solar cells. Nanowire-based tunnel field-effect transistors (TFETs), for example, are widely seen as potential successors of standard MOSFETs, due to the absence of a 60mV/dec sub-threshold swing limitation and reduced short-channel effects.

But to optimize the fabrication processes for such high-performance devices, it is necessary to have a thorough understanding of the active dopant (carrier) distribution. Therefore, researchers from imec have recently extended the applicability of HV-SSRM as a metrology tool for carrier mapping to fully integrated nanowire-based transistors.

Applying HV-SSRM to Si-nanowire-based tunnel-FETs, the team identified a diameter-dependent dopant-deactivation mechanism. This mechanism occurs in small 3D structures only and cannot be predicted using standard process simulation tools. It could be shown experimentally and through device simulations that this phenomenon directly impacts the device characteristics. The validity of the technique is proved by the observance of the diameter dependency of the carrier distribution in the nanowire top-section. This results from a tilted ion implantation step and is perfectly in agreement with results from process simulations.

Scanning spreading resistance microscopy (SSRM) is a technique with a unique combination of high spatial resolution (1 to 3nm) and high sensitivity. SSRM is based on atomic force microscopy and was invented by W. Vandervorst et al. at imec in 1994. During the last decade, it has evolved into the method of choice for carrier profiling in planar MOS transistors. With this work, imec applied HV-SSRM to Si-nanowire-based tunnel-FETs, proving its validity to study carrier distribution in semiconductor nanowires. It also showed that HV-SSRM is capable of revealing physical phenomena which are present in small, 3D structures only, and which cannot be predicted by blanket experiments. Such information is essential for the process development of future nanowire-based devices.

This study has been published in Nanotechnology - issue 18 (volume 22). An illustration from the study was selected for the cover of the journal.

The paper can be accessed on iopscience.iop.org/0957-4484/22/18/185701.

####

About Imec
Imec performs world-leading research in nano-electronics and nano-technology. Its staff of more than 1,900 people includes over 500 industrial residents and guest researchers. Imec’s research is applied in better healthcare, smart electronics, sustainable energy, and safer transport.

For more information, please click here

Contacts:
Barbara Kalkis
Maestro Marketing & PR

Copyright © Imec

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Harris & Harris Group Notes Announcements by Its Portfolio Companies During the Third Quarter of 2016 September 30th, 2016

INVECAS to Enable ASIC Designs for Tomorrow’s Intelligent Systems on GLOBALFOUNDRIES' FDX™ Technology: INVECAS to Collaborate with GLOBALFOUNDRIES to Provide IP and End-to-End ASIC Design Services on 22FDX® and 12FDX™ Technologies September 30th, 2016

How to power up graphene implants without frying cells: New analysis finds way to safely conduct heat from graphene to biological tissues September 30th, 2016

Innovation in Nanotechnology is Focus of Symposium: Annual event brings international experts to Northwestern Oct. 6 September 29th, 2016

Possible Futures

Harris & Harris Group Notes Announcements by Its Portfolio Companies During the Third Quarter of 2016 September 30th, 2016

How to power up graphene implants without frying cells: New analysis finds way to safely conduct heat from graphene to biological tissues September 30th, 2016

Nanosensors could help determine tumors’ ability to remodel tissue: Measuring enzyme levels could help doctors select appropriate treatments September 29th, 2016

Crystalline Fault Lines Provide Pathway for Solar Cell Current: New tomographic AFM imaging technique reveals that microstructural defects, generally thought to be detrimental, actually improve conductivity in cadmium telluride solar cells September 26th, 2016

Sensors

How to power up graphene implants without frying cells: New analysis finds way to safely conduct heat from graphene to biological tissues September 30th, 2016

Nanosensors could help determine tumors’ ability to remodel tissue: Measuring enzyme levels could help doctors select appropriate treatments September 29th, 2016

Cambrios at CEATEC - Japan 2016 September 29th, 2016

Leti and Taiwanese Tech Organizations Sponsoring Workshop in Taipei on MEMS, IoT, Smart Lighting Applications, System Reliability & Security September 28th, 2016

Nanoelectronics

Mexican scientist in the Netherlands seeks to achieve data transmission ... speed of light September 20th, 2016

GLOBALFOUNDRIES to Deliver Industry’s Leading-Performance Offering of 7nm FinFET Technology: Company extends its leading-edge roadmap for products demanding the ultimate processing power September 15th, 2016

Semiconducting inorganic double helix: New flexible semiconductor for electronics, solar technology and photo catalysis September 15th, 2016

A versatile method to pattern functionalized nanowires: A team of researchers from Hokkaido University has developed a versatile method to pattern the structure of 'nanowires,' providing a new tool for the development of novel nanodevices September 9th, 2016

Announcements

Harris & Harris Group Notes Announcements by Its Portfolio Companies During the Third Quarter of 2016 September 30th, 2016

INVECAS to Enable ASIC Designs for Tomorrow’s Intelligent Systems on GLOBALFOUNDRIES' FDX™ Technology: INVECAS to Collaborate with GLOBALFOUNDRIES to Provide IP and End-to-End ASIC Design Services on 22FDX® and 12FDX™ Technologies September 30th, 2016

How to power up graphene implants without frying cells: New analysis finds way to safely conduct heat from graphene to biological tissues September 30th, 2016

Innovation in Nanotechnology is Focus of Symposium: Annual event brings international experts to Northwestern Oct. 6 September 29th, 2016

Tools

Oxford Instruments systems now facilitate water purification technology September 27th, 2016

Dr Barbara Armbruster promoted to Worldwide Sales and Marketing Director for XEI Scientific September 27th, 2016

Oxford Instruments is ‘Bringing the Nanoworld Together’ in India once again - 22 - 23 November 2016 | IISc Bangalore September 21st, 2016

Bruker Introduces Complete Commercial AFM-Based SECM Solution: PeakForce SECM Mode Enables Previously Unobtainable Electrochemical Information September 20th, 2016

Solar/Photovoltaic

Cambrios at CEATEC - Japan 2016 September 29th, 2016

Crystalline Fault Lines Provide Pathway for Solar Cell Current: New tomographic AFM imaging technique reveals that microstructural defects, generally thought to be detrimental, actually improve conductivity in cadmium telluride solar cells September 26th, 2016

Semiconducting inorganic double helix: New flexible semiconductor for electronics, solar technology and photo catalysis September 15th, 2016

New perovskite research discoveries may lead to solar cell, LED advances September 12th, 2016

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







Car Brands
Buy website traffic