Nanotechnology Now







Heifer International

Wikipedia Affiliate Button


DHgate

Home > Press > Imec develops procedure for carrier profiling in nanowire-based transistors

Quantitative 2D-carrier distribution for nanowire diameters of 400nm and 100nm. The difference in drain doping is reflected in the TFET off current.
Quantitative 2D-carrier distribution for nanowire diameters of 400nm and 100nm. The difference in drain doping is reflected in the TFET off current.

Abstract:
Imec's researchers have developed a methodology to quantitatively map the distribution of active dopants in confined 3D-volumes. This is an important step towards in-depth understanding of transistors based on semiconductor nanowires. The new methodology is based on high-vacuum scanning spreading resistance microscopy (HV-SSRM).

Imec develops procedure for carrier profiling in nanowire-based transistors

Leuven, Belgium | Posted on June 16th, 2011

Semiconductor nanowires are one of the most promising building blocks for future nanoelectronic devices such as transistors, sensors and solar cells. Nanowire-based tunnel field-effect transistors (TFETs), for example, are widely seen as potential successors of standard MOSFETs, due to the absence of a 60mV/dec sub-threshold swing limitation and reduced short-channel effects.

But to optimize the fabrication processes for such high-performance devices, it is necessary to have a thorough understanding of the active dopant (carrier) distribution. Therefore, researchers from imec have recently extended the applicability of HV-SSRM as a metrology tool for carrier mapping to fully integrated nanowire-based transistors.

Applying HV-SSRM to Si-nanowire-based tunnel-FETs, the team identified a diameter-dependent dopant-deactivation mechanism. This mechanism occurs in small 3D structures only and cannot be predicted using standard process simulation tools. It could be shown experimentally and through device simulations that this phenomenon directly impacts the device characteristics. The validity of the technique is proved by the observance of the diameter dependency of the carrier distribution in the nanowire top-section. This results from a tilted ion implantation step and is perfectly in agreement with results from process simulations.

Scanning spreading resistance microscopy (SSRM) is a technique with a unique combination of high spatial resolution (1 to 3nm) and high sensitivity. SSRM is based on atomic force microscopy and was invented by W. Vandervorst et al. at imec in 1994. During the last decade, it has evolved into the method of choice for carrier profiling in planar MOS transistors. With this work, imec applied HV-SSRM to Si-nanowire-based tunnel-FETs, proving its validity to study carrier distribution in semiconductor nanowires. It also showed that HV-SSRM is capable of revealing physical phenomena which are present in small, 3D structures only, and which cannot be predicted by blanket experiments. Such information is essential for the process development of future nanowire-based devices.

This study has been published in Nanotechnology - issue 18 (volume 22). An illustration from the study was selected for the cover of the journal.

The paper can be accessed on iopscience.iop.org/0957-4484/22/18/185701.

####

About Imec
Imec performs world-leading research in nano-electronics and nano-technology. Its staff of more than 1,900 people includes over 500 industrial residents and guest researchers. Imec’s research is applied in better healthcare, smart electronics, sustainable energy, and safer transport.

For more information, please click here

Contacts:
Barbara Kalkis
Maestro Marketing & PR

Copyright © Imec

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Scientists join forces to reveal the mass and shape of single molecules April 27th, 2015

The 16th Trends in Nanotechnology International Conference (TNT 2015) unveils 25 Keynote Speakers: Call for abstracts open April 27th, 2015

Graphenea celebrates fifth anniversary April 27th, 2015

Sensor Designed in Iran Able to Remove Formaldehyde Gas from Environment April 27th, 2015

Possible Futures

Printing Silicon on Paper, with Lasers April 21st, 2015

A glass fiber that brings light to a standstill: By coupling photons to atoms, light in a glass fiber can be slowed down to the speed of an express train; for a short while it can even be brought to a complete stop April 9th, 2015

Nanotechnology in Medical Devices Market is expected to reach $8.5 Billion by 2019 March 25th, 2015

Nanotechnology Enabled Drug Delivery to Influence Future Diagnosis and Treatments of Diseases March 21st, 2015

Sensors

Sensor Designed in Iran Able to Remove Formaldehyde Gas from Environment April 27th, 2015

ORNL reports method that takes quantum sensing to new level April 23rd, 2015

New class of 3D-printed aerogels improve energy storage April 22nd, 2015

‘Oxford Instruments Young Nanoscientist India Award 2015’ to Prof. Arindam Ghosh April 20th, 2015

Nanoelectronics

Surface matters: Huge reduction of heat conduction observed in flat silicon channels April 23rd, 2015

New class of 3D-printed aerogels improve energy storage April 22nd, 2015

‘Oxford Instruments Young Nanoscientist India Award 2015’ to Prof. Arindam Ghosh April 20th, 2015

Advances in molecular electronics: Lights on -- molecule on: Researchers from Dresden and Konstanz succeed in light-controlled molecule switching April 20th, 2015

Announcements

Scientists join forces to reveal the mass and shape of single molecules April 27th, 2015

The 16th Trends in Nanotechnology International Conference (TNT 2015) unveils 25 Keynote Speakers: Call for abstracts open April 27th, 2015

Graphenea celebrates fifth anniversary April 27th, 2015

Sensor Designed in Iran Able to Remove Formaldehyde Gas from Environment April 27th, 2015

Tools

Fast and accurate 3-D imaging technique to track optically trapped particles April 24th, 2015

ORNL reports method that takes quantum sensing to new level April 23rd, 2015

Quantum 'paparazzi' film photons in the act of pairing up April 22nd, 2015

Richards-Kortum elected to American Academy of Arts and Sciences: April 22nd, 2015

Solar/Photovoltaic

Pseudoparticles travel through photoactive material: KIT scientists measure important process in the conversion of light energy -- publication in Nature Communications April 24th, 2015

Printing Silicon on Paper, with Lasers April 21st, 2015

Better battery imaging paves way for renewable energy future April 20th, 2015

The microscopic topography of ink on paper: Researchers have analyzed the varying thickness of printed toner in unprecedented 3-D detail, yielding insights that could lead to higher quality, less expensive and more environmentally-friendly glossy and non-glossy papers April 14th, 2015

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More










ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project