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Home > Press > SEMATECH to Present Advances in Lithography and Demonstrate Leading Edge Technologies at SPIE 2011

Abstract:
Papers showcase technological leadership in enabling EUVL pilot line readiness and metrology techniques for defect inspection and 3D TSVs

SEMATECH to Present Advances in Lithography and Demonstrate Leading Edge Technologies at SPIE 2011

Albany, NY | Posted on February 17th, 2011

SEMATECH experts will present world-leading research and development results on extreme ultraviolet (EUV) manufacturability and extendibility, alternative lithography, and related areas of metrology at the SPIE Advanced Lithography 2011 conferences on February 27 - March 3 at the San Jose Convention Center and Marriott in San Jose, CA.

"We are enthusiastic about sharing our progress on some of the most critical aspects of the development of EUV infrastructure," said Bryan Rice, director of lithography at SEMATECH. "Through intense research and development efforts, SEMATECH continues to produce industry leading results for enabling EUVL pilot line readiness and advancing EUV extendibility and alternative lithography."

SEMATECH engineers will report progress on EUV mask infrastructure, manufacturability, advancing extendibility, alternative lithography, metrology and will showcase some of their findings in over 20 papers demonstrating breakthrough results in exposure tool capability, resist advances, defect-related inspection, reticle handling, and nanoimprint.

More importantly, the results presented will be instrumental in driving timely creation of the remaining infrastructure required to bring EUV to full production. In one area of investigation, technologists from SEMATECH's Mask Blank Development Center will report progress with its multilayer deposition process. Specifically, SEMATECH, in partnership with inspection tool suppliers, has identified defect sources and validation of defect mitigation techniques.

Other SEMATECH papers will showcase advances in metrology techniques, photoresist shrinkage, scatterometry, non-destructive TSV etch depth, CD-SAXS - a possible x-ray metrology CD technique for future nodes - and an optical CD metrology technique under development at NIST, which was a winner of last year's R&D Magazine's R&D 100 award.

"The Advanced Development Metrology Program brings together world-class researchers and engineers along with access to critical laboratory analytical equipment to provide advanced metrology capabilities to our members and the semiconductor community," said Phil Bryson, director of metrology at SEMATECH. "We are excited to share our results with an august community of technologists assembled at SPIE, which plays an increasingly significant role in propelling the semiconductor industry towards future generations."

Among the global semiconductor community's leading gatherings, the SPIE conference series attracts thousands of specialists in various aspects of lithography and related metrology, two of the most challenging areas of advanced microchip production.

For a complete list of SEMATECH presentations at SPIE please visit:

www.sematech.org/corporate/news/features/SPIE/2011/

####

About SEMATECH
For over 20 years, SEMATECHģ (www.sematech.org), the international consortium of leading semiconductor manufacturers, has set global direction, enabled flexible collaboration, and bridged strategic R&D to manufacturing. Today, we continue accelerating the next technology revolution with our nanoelectronics and emerging technology partners.

For more information, please click here

Contacts:
Erica McGill
SEMATECH | Media Relations
257 Fuller Road | Suite 2200 | Albany, NY | 12203
o: 518-649-1041 | m: 518-487-8256

Copyright © SEMATECH

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