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Home > Press > MOU between E3S and IHP

Abstract:
Memorandum of Understanding signed between Centre for Energy Efficient Electronics (E3S) in Berkeley and IHP - Innovations for High Performance Microelectronics in Frankfurt (Oder)

MOU between E3S and IHP

Frankfurt | Posted on September 22nd, 2010

The National Science Foundation Energy Efficient Electronics Science (E3S) Centre of U.S.A. and the German Leibniz Institute Innovations for High Performance Microelectronics (IHP) in Frankfurt (Oder) agree to facilitate research cooperation and exchanges in fields of nanoscience and nanotechnology between both parties for their mutual scientific benefit. Special focus is devoted to novel basic materials science approaches to build up low power Silicon microelectronics, for example by merging photonics and electronics on the mature Si technology platform. E3S director Prof. Eli Yablonovitch visited IHP on 22nd June 2010 to discuss with IHP scientists various approaches to achieve these goals.

IHP offers a unique research environment to tackle these questions, as its materials science, technology as well as circuit and system design departments allow to address all levels of modern Si microelectronics research. Furthermore, IHP recently opened a joined Si photonics laboratory with Technical University of Berlin.

Further information: www.berkeley.edu/news/media/releases/2010/02/23_nsf_award.shtml
and here www.ihp-microelectronics.com/332.0.html

####

About IHP GmbH
We investigate and develop wireless communication technologies. Our activities are directed to strengthen the competitive position of the European and German industry and to create attractive local conditions for high technology.

For more information, please click here

Contacts:
Dr. Thomas Schröder
Materials Research
IHP – Innovations for High Performance Microelectronics / Leibniz-Institut für
innovative Mikroelektronik
Im Technologiepark 25
15236 Frankfurt (Oder)
Tel: +49 335 5625 318
Email:
www.ihp-microelectronics.com

Copyright © IHP GmbH

If you have a comment, please Contact us.

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