Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > Press > European project solves variability issues of designing in deep submicron IC technology

Abstract:
REALITY, a European funded initiative on Design for Variability, has just finished its project mission.

European project solves variability issues of designing in deep submicron IC technology

Leuven, Belgium | Posted on September 21st, 2010

In about its 2.5 years lifespan REALITY has focused on developing industrially relevant innovative design techniques, methods, and flows for the design and analysis of energy-efficient self-adaptive System-on-Chips (SoCs). The tackled challenges include benchmarking the impact of the latest 32nm CMOS process manufacturing variability at all abstraction levels, from device to System-on-a-Chip level, while developing approaches to compensate their negative impact in the design of final products. REALITY has resulted in a number of first time conclusions.

Full-scale 3D simulation of statistical variability associated with metal gate granularity and the corresponding metal work function variations have been carried out to clarify the magnitude of statistical variability in 32nm CMOS transistors with high-k/metal gate stack. For these devices the metal granularities can double the variability if the metal grain size becomes comparable to the transistor dimensions.

Also, a full statistical characterization of an ARM926 core has been achieved. A correlation between the timing, leakage and dynamic power has been demonstrated on local (within die) and non-local (above die) variations. The traditional corner analysis could be benchmarked with innovative statistical analysis techniques. Using the ARM core as driver, REALITY has confirmed that the SRAM components are responsible for more than the half of the variations on critical path timing.

Hence, Statistical Timing Analysis (SSTA) flows that assume predictable timing response from these components may lead to over-optimistic conclusions. For that purpose REALITY has deployed a holistic statistical characterization flow including SRAM analysis.

With a novel flow integrating manufacturing variations and ageing effects for mixed-signal circuits, the REALITY project also developed a CAD environment that allows designers to make more accurate estimations and thus make circuits more energy and cost efficient.

Finally, REALITY evaluated the impact of process variation in SW-level metrics showing process variability is not only a concern for HW but for SW as well. Variability affecting multi-core multimedia platforms makes it hard to guarantee a certain QoS from the running application's functionality. For that purpose, different circuit design techniques for system adaptation have been investigated, among them Adaptive Body Biasing (ABB). REALITY has shown that ABB can speed up a system-on-chip when due to technology parameter variations the manufactured product became too slow.

####

For more information, please click here

Contacts:
Miguel Miranda
Project Coordinator
imec
Kapeldreef 75, 3001 Leuven, Belgium

Copyright © imec

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Dressing a metal in various colors: DGIST research developed a technology to coat metal with several nanometers of semiconducting materials January 17th, 2017

Nanoparticle exposure can awaken dormant viruses in the lungs January 17th, 2017

Nanoscale view of energy storage January 16th, 2017

Seeing the quantum future... literally: What if big data could help you see the future and prevent your mobile phone from breaking before it happened? January 16th, 2017

Chip Technology

Dressing a metal in various colors: DGIST research developed a technology to coat metal with several nanometers of semiconducting materials January 17th, 2017

Seeing the quantum future... literally: What if big data could help you see the future and prevent your mobile phone from breaking before it happened? January 16th, 2017

NUS researchers achieve major breakthrough in flexible electronics: New classes of printable electrically conducting polymer materials make better electrodes for plastic electronics and advanced semiconductor devices January 14th, 2017

Nanoscale Modifications can be used to Engineer Electrical Contacts for Nanodevices January 13th, 2017

Nanoelectronics

Nano-chimneys can cool circuits: Rice University scientists calculate tweaks to graphene would form phonon-friendly cones January 4th, 2017

Advance in intense pulsed light sintering opens door to improved electronics manufacturing December 23rd, 2016

Fast track control accelerates switching of quantum bits December 16th, 2016

GLOBALFOUNDRIES Demonstrates Industry-Leading 56Gbps Long-Reach SerDes on Advanced 14nm FinFET Process Technology: Proven ASIC IP solution will enable significant performance and power efficiency improvements for next-generation high-speed applications December 13th, 2016

Announcements

Dressing a metal in various colors: DGIST research developed a technology to coat metal with several nanometers of semiconducting materials January 17th, 2017

Nanoparticle exposure can awaken dormant viruses in the lungs January 17th, 2017

Nanoscale view of energy storage January 16th, 2017

Seeing the quantum future... literally: What if big data could help you see the future and prevent your mobile phone from breaking before it happened? January 16th, 2017

Alliances/Trade associations/Partnerships/Distributorships

GLOBALFOUNDRIES Expands Partner Program to Speed Time-to-Market of FDX™ Solutions: Increased support affirms FDXcelerator™ Program’s vital role in promoting broader deployment of GLOBALFOUNDRIES’ FDX™ portfolio December 15th, 2016

Infrared instrumentation leader secures exclusive use of Vantablack coating December 5th, 2016

Leti and Grenoble Partners Demonstrate World’s 1st Qubit Device Fabricated in CMOS Process: Paper by Leti, Inac and University of Grenoble Alpes Published in Nature Communications November 28th, 2016

Mechanism for sodium storage in 2-D material: Tin selenide is an effective host for storing sodium ions, making it a promising material for sodium ion batteries October 27th, 2016

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project