Home > News > Carbon semiconductors clear CMOS hurdle
February 18th, 2010
Carbon semiconductors clear CMOS hurdle
Abstract:
Carbon semiconductors fashioned from pure crystalline sheets of graphene outperform silicon but have lacked a foolproof method for creating the p- and n-type devices required for complementary metal-oxide semiconductor (CMOS) transistors. Now the Georgia Institute of Technology claims to have a devised a one-step graphene doping process, paving the way for commercial fabrication.
Georgia Tech's technique uses a commonly available spin-on-glass (SOG) material applied to graphene sheets. The grayscale material can be patterned to provide either p-type or n-type doping by merely varying the dose of radiation.
Source:
eetimes.com
Bookmark:
News and information
Pioneering breakthrough of chemical nanoengineering to design drugs controlled by light June 18th, 2013
Study Shows How the Nanog Protein Promotes Growth of Head and Neck Cancer June 18th, 2013
New Method to Synthesize Zinc Oxide Nanoparticles with High Catalytic Activity June 18th, 2013
Production of Polyaniline Biosensors Modified with Conductive Polymer Composites June 18th, 2013
Govt.-Legislation/Regulation/Funding/Policy
3-D printing could lead to tiny medical implants, electronics, robots, more June 18th, 2013
Working backward: Computer-aided design of zeolite templates: Rice scientists apply drug-design lessons to production of industrial minerals June 17th, 2013
An Innovative material for the Green Earth: Simple and inexpensive process to make a material for CO2 adsorption June 17th, 2013
Discovery of new material state counterintuitive to laws of physics June 14th, 2013
Chip Technology
Which qubit my dear? New method to distinguish between neighbouring quantum bits June 18th, 2013
SEMATECH to Address Critical Supply Chain Challenges and Present Latest Technology Advances at SEMICON West 2013 June 17th, 2013
Imec shows multiple enhancement options for next-generation FinFETs: Leading nano-electronics R&D center addresses key challenges of Germanium finFET technology at VLSI 2013 June 14th, 2013
Imec showcases innovation in RRAM R&D at VLSI Technology Symposium June 14th, 2013
Nanoelectronics
Imec presents 4K2K CMOS image sensor together with Panasonic: The co-developed imager sensor chip targets high speed, high resolution imaging applications such as next generation HDTV June 18th, 2013
Imec shows multiple enhancement options for next-generation FinFETs: Leading nano-electronics R&D center addresses key challenges of Germanium finFET technology at VLSI 2013 June 14th, 2013
Controlling magnetic clouds in graphene June 14th, 2013
Spot-welding graphene nanoribbons atom by atom June 13th, 2013
Announcements
Pioneering breakthrough of chemical nanoengineering to design drugs controlled by light June 18th, 2013
Study Shows How the Nanog Protein Promotes Growth of Head and Neck Cancer June 18th, 2013
New Method to Synthesize Zinc Oxide Nanoparticles with High Catalytic Activity June 18th, 2013
Production of Polyaniline Biosensors Modified with Conductive Polymer Composites June 18th, 2013