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Home > News > Carbon semiconductors clear CMOS hurdle

February 18th, 2010

Carbon semiconductors clear CMOS hurdle

Abstract:
Carbon semiconductors fashioned from pure crystalline sheets of graphene outperform silicon but have lacked a foolproof method for creating the p- and n-type devices required for complementary metal-oxide semiconductor (CMOS) transistors. Now the Georgia Institute of Technology claims to have a devised a one-step graphene doping process, paving the way for commercial fabrication.
Georgia Tech's technique uses a commonly available spin-on-glass (SOG) material applied to graphene sheets. The grayscale material can be patterned to provide either p-type or n-type doping by merely varying the dose of radiation.

Source:
eetimes.com

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