Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > Press > Imec presents new GaN-on-Si architecture for enhancement mode power switching devices

IMEC SiN/AlGaN/GaN field effect transistor
IMEC SiN/AlGaN/GaN field effect transistor

Abstract:
At this week's International Electron Devices Meeting, the nanoelectronics research center imec presents an innovative, simple and robust GaN-on-Si double heterostructure FET (field effect transistor) architecture for GaN-on-Si power switching devices. The architecture meets the normally off requirements of power switching circuits and is characterized by low leakage and high breakdown voltage, both essential parameters to reduce the power loss of high-power switching applications.

Imec presents new GaN-on-Si architecture for enhancement mode power switching devices

IEEE IEDM 2009, Baltimore, MD | Posted on December 8th, 2009

High-voltage power devices are traditionally based on Si-MOSFET structures. However, for a number of applications, Si power devices have reached the intrinsic material limits. GaN-compounds are nowadays the best candidates to replace Si power devices, thanks to their high band gap (excellent transport properties) and their high electrical breakdown field. However, the cost of GaN power devices is high. GaN-epilayers grown on large diameter Si wafers, potentially up to 200mm, offer a lower cost technology compared to other substrates.

Imec obtained a high-breakdown voltage of almost 1000V combined with low on-resistance by growing an SiN/AlGaN/GaN/AlGaN double heterostructure FET structure on a Si substrate. By combining its double heterostructure FET architecture with in-situ SiN grown in the same epitaxial sequence as the III-nitride layers, imec succeeded in obtaining e-mode device operation. This is typically required in applications for safety reasons. The fabrication is based on an optimized process for the selective removal of in-situ SiN. The resulting SiN/AlGaN/GaN/AlGaN double heterostructure FET is characterized by a high breakdown voltage of 980V, an excellent uniformity and a low dynamic specific on-resistance of 3.5 mW.cm2 that is well within the present state-of-the-art. These results hold the promise of a huge market opportunity for GaN-on-Si power devices.

Within imec's industrial affiliation program (IIAP) on GaN-on-Si technology, imec and its partners focus on the development of GaN technology for both power conversion and solid state lighting applications. An important goal of the program is to lower GaN technology cost by using large-diameter GaN-on-Si and hence by leveraging on the scale of economics. Imec invites both integrated device manufacturers and compound semiconductor industry to join the program. Partners can build on imec's extensive expertise in GaN and benefit from sharing of cost, risk and talent.

####

About IMEC
Imec performs world-leading research in nano-electronics. imec leverages its scientific knowledge with the innovative power of its global partnerships in ICT, healthcare and energy. imec delivers industry-relevant technology solutions. In a unique high-tech environment, its international top talent is committed to providing the building blocks for a better life in a sustainable society.

Imec is headquartered in Leuven, Belgium, and has offices in Belgium, the Netherlands, Taiwan, US, China and Japan. Its staff of more than 1,650 people includes over 550 industrial residents and guest researchers. In 2008, imec's revenue (P&L) was 270 million euro.

Further information on imec can be found at www.imec.be.

NOTE: Imec is a registered trademark for the activities of imec International (a legal entity set up under Belgian law as a "stichting van openbaar nut”), imec Belgium (imec vzw supported by the Flemish Government), imec the Netherlands (Stichting imec Nederland, part of Holst Centre which is supported by the Dutch Government) and imec Taiwan (imec Taiwan Co.).

For more information, please click here

Contacts:
Hanne Degans, IMEC Press Officer, T: +32 16 28 17 69,

Barbara Kalkis, Maestro Marketing & PR, T: +1 408 996 9975,

Copyright © IMEC

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Dressing a metal in various colors: DGIST research developed a technology to coat metal with several nanometers of semiconducting materials January 17th, 2017

Nanoparticle exposure can awaken dormant viruses in the lungs January 17th, 2017

Nanoscale view of energy storage January 16th, 2017

Seeing the quantum future... literally: What if big data could help you see the future and prevent your mobile phone from breaking before it happened? January 16th, 2017

Chip Technology

Dressing a metal in various colors: DGIST research developed a technology to coat metal with several nanometers of semiconducting materials January 17th, 2017

Seeing the quantum future... literally: What if big data could help you see the future and prevent your mobile phone from breaking before it happened? January 16th, 2017

NUS researchers achieve major breakthrough in flexible electronics: New classes of printable electrically conducting polymer materials make better electrodes for plastic electronics and advanced semiconductor devices January 14th, 2017

Nanoscale Modifications can be used to Engineer Electrical Contacts for Nanodevices January 13th, 2017

Nanoelectronics

Nano-chimneys can cool circuits: Rice University scientists calculate tweaks to graphene would form phonon-friendly cones January 4th, 2017

Advance in intense pulsed light sintering opens door to improved electronics manufacturing December 23rd, 2016

Fast track control accelerates switching of quantum bits December 16th, 2016

GLOBALFOUNDRIES Demonstrates Industry-Leading 56Gbps Long-Reach SerDes on Advanced 14nm FinFET Process Technology: Proven ASIC IP solution will enable significant performance and power efficiency improvements for next-generation high-speed applications December 13th, 2016

Announcements

Dressing a metal in various colors: DGIST research developed a technology to coat metal with several nanometers of semiconducting materials January 17th, 2017

Nanoparticle exposure can awaken dormant viruses in the lungs January 17th, 2017

Nanoscale view of energy storage January 16th, 2017

Seeing the quantum future... literally: What if big data could help you see the future and prevent your mobile phone from breaking before it happened? January 16th, 2017

Events/Classes

Harris & Harris Group Issues Reminder for Shareholder Update Call on January 10, 2017 January 10th, 2017

Nanometrics to Present at the 19th Annual Needham Growth Conference December 22nd, 2016

Leti Will Demonstrate Fusion of Autonomous Car’s Senses: SIGMA FUSION’s Efficient, Sensor-based System Fits in a Microcontroller Platform, Anticipates Safety Requirements December 13th, 2016

Imec and Holst Centre Introduce World’s First Solid-State Multi-Ion Sensor for Internet-of-Things Applications December 13th, 2016

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project