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Home > News > Terabyte Nonvolatile Memory

December 17th, 2007

Terabyte Nonvolatile Memory

Abstract:
Source: "Bipolar and Unipolar Resistive Switching in Cu-Doped SiO2"
Christina Schindler et al.
IEEE Transactions on Electron Devices 54: 2762-2768

Results: Using silicon and copper, researchers have made a new type of ≠memory that stores information by harnessing negative and positive charges to assemble and disassemble nanoscale metallic wires. Each ≠memory cell consists of two electrodes separated by an electrolyte doped with copper ions. When a cell is in the off state, little current passes from one electrode to the other. When a "writing" voltage is applied, the ions line up and form a filament that bridges the electrodes, markedly increasing current. Reversing the voltage causes the filament to dissolve.

Source:
technologyreview.com

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