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December 17th, 2007
Source: "Bipolar and Unipolar Resistive Switching in Cu-Doped SiO2"
Christina Schindler et al.
IEEE Transactions on Electron Devices 54: 2762-2768
Results: Using silicon and copper, researchers have made a new type of memory that stores information by harnessing negative and positive charges to assemble and disassemble nanoscale metallic wires. Each memory cell consists of two electrodes separated by an electrolyte doped with copper ions. When a cell is in the off state, little current passes from one electrode to the other. When a "writing" voltage is applied, the ions line up and form a filament that bridges the electrodes, markedly increasing current. Reversing the voltage causes the filament to dissolve.
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