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Home > News > California Inventors Develop Carbon Nanotube Transistor Device Fabrication Method

December 3rd, 2007

California Inventors Develop Carbon Nanotube Transistor Device Fabrication Method

Thomas W. Tombler of Goleta, Calif., and Brian Y. Lim of Simi Valley, Calif., have developed a method of making a transistor device.

According to the U.S. Patent & Trademark Office: "During fabrication of single-walled carbon nanotube transistor devices, a porous template with numerous parallel pores is used to hold the single-walled carbon nanotubes. The porous template or porous structure may be anodized aluminum oxide or another material. A gate region may be provided one end or both ends of the porous structure."


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