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Home > News > Nanowire transistors outperform MOSFETs

May 25th, 2006

Nanowire transistors outperform MOSFETs

Abstract:
Researchers at Harvard University, US, say they have made the best nanowire transistors to date. The devices consisted of germanium/silicon core/shell nanowire field-effect transistors (FETs) using high-κ dielectrics and a metal top gate geometry.

Source:
nanotechweb

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