Nanotechnology Now

Our NanoNews Digest Sponsors





Heifer International

Wikipedia Affiliate Button


android tablet pc

Home > Press > Good Memory

Abstract:
On the way to plastic electronics: polymer-based dynamic random access memory (DRAM)

Good Memory

Posted on April 14, 2006

Smaller, lighter, more compact devices that can do more and more, work faster, and juggle more data—these demands are pushing conventional semiconductor technology up against its limits. In the future, plastics will have to take over. A number of polymeric electronic components have already been made. Researchers at the National University of Singapore and the Institute of Microelectronics in Singapore have now successfully produced DRAM storage based on a plastic.

The Singaporean team also recently made flash memory (a rewritable memory) and write-once read-many-times (WORM) memory based on polymers. Now they have introduced another type of memory, dynamic random access memory (DRAM), based on a polymer. In this “short-term” or “dynamic” memory, electronic devices temporarily store all processes—storage units are updated by refreshing voltage pulses.

In contrast to a semiconductor chip, which “keeps track” of data in the form of electrical charge, the “0” and “1” signals in polymer-based memory are stored as high and low conductivity, respectively. The researchers produced a special copolymer, a plastic whose long molecular chains are made of two different components that are finely tuned to each other. This polymer is embedded as a thin film between two electrodes. The polymer is initially in the OFF state, which is characterized by low conductivity. A barrier hinders the flow of electrons through the film. In order to “write” to the memory, a low voltage above a certain threshold (-2.8 V) is enough to switch the copolymer into a highly conducting state, the ON state. The memory is “read” by means of voltage pulses below the threshold. The secret behind this device is the combination of the barrier and a kind of “pit trap” for charge carriers. If the barrier is first overcome above the threshold, the pits are filled with charge carriers. The altered electrical field then causes the barrier to become ineffective. The current can then flow through the film unhindered. The pits are “shallow”, which allows the charge carriers to come out easily: If no voltage is applied for over two minutes they “climb” out of the pits on their own and the memory “forgets” its programming and returns to the OFF state. This is just what it should do as “dynamic” memory. “Erasing” the memory is accomplished by an opposing voltage pulse above +3.5 V. This immediately returns the memory to the original OFF state with empty traps. Renewed application of more than -2.8 V always returns the memory to its writeable state.

####


Author: En-Tang Kang, National University of Singapore (Singapore), www.chee.nus.edu.sg/staff/kang.html

Title: A Dynamic Random Access Memory (DRAM) Based on a Conjugated Copolymer Containing Electron-Donor and -Acceptor Moieties

Angewandte Chemie International Edition, 2006, 45, No. 18, 2947–2951, doi: 10.1002/anie.200504365

Contact:
Editorial office:
angewandte@wiley-vch.de

or David Greenberg (US)
dgreenbe@wiley.com

or Julia Lampam (UK)
jlampam@wiley.co.uk

Copyright © Angewandte Chemie

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Memory Technology

Rice's silicon oxide memories catch manufacturers' eye: Use of porous silicon oxide reduces forming voltage, improves manufacturability July 10th, 2014

University of Illinois study advances limits for ultrafast nano-devices July 10th, 2014

Leti to Present Technological Platforms Targeting Industry’s Needs for the Future at Semicon West Workshop: Presentation at STS Session to Focus on Leti Advanced Lithography Programs for 1x Nodes and on Silicon Photonics at TechXPot June 25th, 2014

6TH CEA-LETI WORKSHOP ON INNOVATIVE MEMORY TECHNOLOGIES includes invited talks by Infineon, IBM, Schlumberger, Thales, Cisco and STMicroelectronics: June 24 Event to Explore NVM Application Horizons from Automotive to Oil & Gas: Responses from Innovative Technologies & Design June 12th, 2014

Materials/Metamaterials

Silicene Labs Announces the Launch of Patent-Pending, 2D Materials Composite Index™ : The Initial 2D Materials Composite Index™ for Q2 2014 Is: 857.3; Founders Include World-Renowned Physicist and Seasoned Business and IP Professionals July 24th, 2014

Iranian Scientists Produce Transparent Nanocomposite Coatings with Longer Lifetime July 24th, 2014

Penn Study: Understanding Graphene’s Electrical Properties on an Atomic Level July 22nd, 2014

NUS scientists use low cost technique to improve properties and functions of nanomaterials: By 'drawing' micropatterns on nanomaterials using a focused laser beam, scientists could modify properties of nanomaterials for effective applications in photonic and optoelectric applicat July 22nd, 2014

Announcements

Silicene Labs Announces the Launch of Patent-Pending, 2D Materials Composite Index™ : The Initial 2D Materials Composite Index™ for Q2 2014 Is: 857.3; Founders Include World-Renowned Physicist and Seasoned Business and IP Professionals July 24th, 2014

Iranian Scientists Produce Transparent Nanocomposite Coatings with Longer Lifetime July 24th, 2014

Deadline Announced for Registration in 7th Int'l Nanotechnology Festival in Iran July 23rd, 2014

A Crystal Wedding in the Nanocosmos July 23rd, 2014

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More














ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2014 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE