Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > News > Staying Out in Front

April 25th, 2005

Staying Out in Front

Abstract:
A published road map for the semiconductor industry has the smallest distances between wires on a memory chip shrinking from 90 nanometers today to 65nm in 2007, to 45nm in 2010, to 32nm in 2013 and on down from there.

"What they are going to do 12 years from now is mapped out, but they don't have a clue how to do that," says (HP Labs' Duncan) Stewart. "In fact, they think they may not be able to do it."

The 32nm milestone is "a reasonable place for us to inject some of these ideas," he says. The idea isn't to replace silicon transistors but to build certain devices, such as ultradense memories, on top of CMOS chips. Stewart says HP hopes to eventually build crossbar devices smaller than 3nm.

Source:
computerworld.com

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Possible Futures

Ultra-thin memory storage device paves way for more powerful computing January 17th, 2018

Scientists synthesize nanoparticle-antioxidants to treat strokes and spinal cord injuries January 16th, 2018

New catalyst for hydrogen production is a step toward clean fuel: Carbon-based nanocomposite with embedded metal ions yields impressive performance as catalyst for electrolysis of water to generate hydrogen January 16th, 2018

'Gyroscope' molecules form crystal that's both solid and full of motion: New type of molecular machine designed by UCLA researchers could have wide-ranging applications in technology and science January 16th, 2018

Chip Technology

Ultra-thin memory storage device paves way for more powerful computing January 17th, 2018

'Gyroscope' molecules form crystal that's both solid and full of motion: New type of molecular machine designed by UCLA researchers could have wide-ranging applications in technology and science January 16th, 2018

New oxide and semiconductor combination builds new device potential: Researchers integrated oxide two-dimensional electron gases with gallium arsenide and paved the way toward new opto-electrical devices January 10th, 2018

STMicroelectronics Selects GLOBALFOUNDRIES 22FDX to Extend Its FD-SOI Platform and Technology Leadership : GFs FDX technology will enable ST to deliver high-performance, low-power products for next-generation consumer and industrial applications January 9th, 2018

Nanoelectronics

Viewing atomic structures of dopant atoms in 3-D relating to electrical activity in a semiconductor December 28th, 2017

Electronically-smooth '3-D graphene': A bright future for trisodium bismuthide: Electronically-smooth nature of trisodium bismuthide makes it a viable alternative to graphene/h-BN December 22nd, 2017

Columbia engineers create artificial graphene in a nanofabricated semiconductor structure: Researchers are the first to observe the electronic structure of graphene in an engineered semiconductor; finding could lead to progress in advanced optoelectronics and data processing December 13th, 2017

GLOBALFOUNDRIES, Fudan Team to Deliver Next Generation Dual Interface Smart Card November 14th, 2017

Profiles

Russias Nano-enabled Products Market to Witness Massive Growth February 8th, 2011

Adept Technology Announces Orders for Over $600K from Chinese Partner January 18th, 2011

Nanostart-held ItN Nanovation Receives Major Follow-on Order in Saudi Arabia November 29th, 2010

Homegrown Companies Developing Batteries for Clean Energy Storage November 2nd, 2010

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project