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Home > News > Freescale, Soitec claim 45nm designs with strained SOI

April 13th, 2005

Freescale, Soitec claim 45nm designs with strained SOI

Abstract:
By combining Soitec's Smart Cut SOI technology and Freescale's advanced CMOS process capabilities, the development team was able to produce the industry's first functional 45nm CMOS devices on bonded strained SOI substrates.

Source:
EETimes

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Freescale Semiconductor

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