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Home > News > Nantero reports 10-Gbit nanotube memory array

May 10th, 2003

Nantero reports 10-Gbit nanotube memory array

Abstract:
Nantero Inc., a start-up company looking to use nanometer-scale structures to create a nonvolatile RAM, has said it has created the basis of a 10-Gbit memory, an array of more than 10 billion carbon nanotube "junctions" on a silicon wafer. (more on earlier story)

Source:
EETimes

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