Nanotechnology Now

Our NanoNews Digest Sponsors
Heifer International



Home > Press > Mass production of revolutionary computer memory moves closer with ULTRARAM™ on silicon wafers for the first time

ULTRARAM™ is a novel type of memory with extraordinary properties

CREDIT
Manus Hayne, Lancaster University
ULTRARAM™ is a novel type of memory with extraordinary properties CREDIT Manus Hayne, Lancaster University

Abstract:
A pioneering type of patented computer memory known as ULTRARAM™ has been demonstrated on silicon wafers in what is a major step towards its large-scale manufacture.

Mass production of revolutionary computer memory moves closer with ULTRARAM™ on silicon wafers for the first time

Lancaster, UK | Posted on January 7th, 2022

ULTRARAM™ is a novel type of memory with extraordinary properties. It combines the non-volatility of a data storage memory, like flash, with the speed, energy-efficiency and endurance of a working memory, like DRAM. To do this it utilises the unique properties of compound semiconductors, commonly used in photonic devices such as LEDS, laser diodes and infrared detectors, but not in digital electronics, which is the preserve of silicon.

Initially patented in the US, further patents on the technology are currently being progressed in key technology markets around the world.

Now, in a collaboration between the Physics and Engineering Departments at Lancaster University and the Department of Physics at Warwick, ULTRARAM™ has been implemented on silicon wafers for the very first time.

Professor Manus Hayne of the Department of Physics at Lancaster, who leads the work said, “ULTRARAM™ on silicon is a huge advance for our research, overcoming very significant materials challenges of large crystalline lattice mismatch, the change from elemental to compound semiconductor and differences in thermal contraction.”

Digital electronics, which is the core of all gadgetry from smart watches and smart phones through to personal computers and datacentres, uses processor and memory chips made from the semiconductor element silicon.

Due to the maturity of the silicon chip-making industry and the multi-billion dollar cost of building chip factories, implementation of any digital electronic technology on silicon wafers is essential for its commercialisation.

Remarkably, the ULTRARAM™ on silicon devices actually outperform previous incarnations of the technology on GaAs compound semiconductor wafers, demonstrating (extrapolated) data storage times of at least 1000 years, fast switching speed (for device size) and program-erase cycling endurance of at least 10 million, which is one hundred to one thousand times better than flash.

The research is reported in the journal Advanced Electronic Materials.

####

For more information, please click here

Contacts:
Gillian Whitworth
Lancaster University

Office: 01-524-592-612

Copyright © Lancaster University

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related Links

ARTICLE TITLE

Related News Press

News and information

Study demonstrates that Ta2NiSe5 is not an excitonic insulator international research team settles the decade-long debate around the microscopic origin of symmetry breaking in the bulk crystal May 12th, 2023

Laser direct writing of Ga2O3/liquid metal-based flexible humidity sensors May 12th, 2023

Breakthrough in the optical properties of MXenes - two-dimensional heterostructures provide new ideas May 12th, 2023

Novel design perovskite electrochemical cell for light-emission and light-detection May 12th, 2023

Possible Futures

Researchers at Purdue discover superconductive images are actually 3D and disorder-driven fractals May 12th, 2023

Laser direct writing of Ga2O3/liquid metal-based flexible humidity sensors May 12th, 2023

Breakthrough in the optical properties of MXenes - two-dimensional heterostructures provide new ideas May 12th, 2023

Novel design perovskite electrochemical cell for light-emission and light-detection May 12th, 2023

Chip Technology

Rensselaer researcher uses artificial intelligence to discover new materials for advanced computing Trevor Rhone uses AI to identify two-dimensional van der Waals magnets May 12th, 2023

With new experimental method, researchers probe spin structure in 2D materials for first time: By observing spin structure in “magic-angle” graphene, a team of scientists led by Brown University researchers have found a workaround for a long-standing roadblock in the field of two May 12th, 2023

Study demonstrates that Ta2NiSe5 is not an excitonic insulator international research team settles the decade-long debate around the microscopic origin of symmetry breaking in the bulk crystal May 12th, 2023

Laser direct writing of Ga2O3/liquid metal-based flexible humidity sensors May 12th, 2023

Memory Technology

Rensselaer researcher uses artificial intelligence to discover new materials for advanced computing Trevor Rhone uses AI to identify two-dimensional van der Waals magnets May 12th, 2023

TUS researchers propose a simple, inexpensive approach to fabricating carbon nanotube wiring on plastic films: The proposed method produces wiring suitable for developing all-carbon devices, including flexible sensors and energy conversion and storage devices March 3rd, 2023

Researchers develop innovative tool for measuring electron dynamics in semiconductors: Insights may lead to more energy-efficient chips and electronic devices March 3rd, 2023

Approaching the terahertz regime: Room temperature quantum magnets switch states trillions of times per second January 20th, 2023

Discoveries

With new experimental method, researchers probe spin structure in 2D materials for first time: By observing spin structure in “magic-angle” graphene, a team of scientists led by Brown University researchers have found a workaround for a long-standing roadblock in the field of two May 12th, 2023

Study demonstrates that Ta2NiSe5 is not an excitonic insulator international research team settles the decade-long debate around the microscopic origin of symmetry breaking in the bulk crystal May 12th, 2023

Laser direct writing of Ga2O3/liquid metal-based flexible humidity sensors May 12th, 2023

Breakthrough in the optical properties of MXenes - two-dimensional heterostructures provide new ideas May 12th, 2023

Announcements

Study demonstrates that Ta2NiSe5 is not an excitonic insulator international research team settles the decade-long debate around the microscopic origin of symmetry breaking in the bulk crystal May 12th, 2023

Laser direct writing of Ga2O3/liquid metal-based flexible humidity sensors May 12th, 2023

Breakthrough in the optical properties of MXenes - two-dimensional heterostructures provide new ideas May 12th, 2023

Novel design perovskite electrochemical cell for light-emission and light-detection May 12th, 2023

Interviews/Book Reviews/Essays/Reports/Podcasts/Journals/White papers/Posters

Researchers at Purdue discover superconductive images are actually 3D and disorder-driven fractals May 12th, 2023

Laser direct writing of Ga2O3/liquid metal-based flexible humidity sensors May 12th, 2023

Breakthrough in the optical properties of MXenes - two-dimensional heterostructures provide new ideas May 12th, 2023

Novel design perovskite electrochemical cell for light-emission and light-detection May 12th, 2023

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project