Home > Press > Nitrogen Doped Graphene Characterized by Iranian, Russian, German Scientists
Abstract:
An Iranian researcher in association with his colleagues from Russia and Germany presented a mathematical model for the characterization of doped graphene.
Results of the research have application in predicting and characterizing electronic properties of doped graphene.
Many researchers have so far tried to find appropriate methods for controlling and adjusting the properties of graphene. Among the proposed methods for the modification of electronic structure of graphene, mention can be made of creating geometric limitation, interaction with substrate, deposition of atoms and molecules, uneven-making or imposing external field. A promising process in this regard is to create malfunction or to dope graphene with the guest atoms. Studies show that graphene can be used as an appropriate material in batteries, super capacitors, fuel cells and other similar products after the changes.
The researchers next carried out a new project to understand the fundamental properties of nitrogen doped graphene, and to present its chemical mechanism with dot malfunctions. In this research, some tests, including XPS and ARPES have been used after characterization of doped graphene. Then, a mathematical model was presented to express the changes and to theoretically explain the mechanism of the process.
Dr. Mani Farjam Hamedani, a member of the Scientific Board of Institute for Research in Fundamental Sciences and one of the researchers, was in charge of modeling and carrying out DFT calculations.
According to the researcher, better understanding of charge transfer between nitrogen and doped graphene was among the objectives of the research. The details of the reaction and its dependency on the type of malfunctions and their numbers can be determined by using the calculations.
Results of the research, being carried out by Dr. Farjam Hamedani et al., have been published in Nano Letters, vol. 14, issue 9, 2014, pp. 4982-4988.
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